© Semiconductor Components Industries, LLC, 2014
November, 2014 Rev. 9
1 Publication Order Number:
TIP120/D
TIP120, TIP121, TIP122
(NPN); TIP125, TIP126,
TIP127 (PNP)
Plastic Medium-Power
Complementary Silicon
Transistors
Designed for generalpurpose amplifier and lowspeed switching
applications.
Features
High DC Current Gain
h
FE
= 2500 (Typ) @ I
C
= 4.0 Adc
CollectorEmitter Sustaining Voltage @ 100 mAdc
V
CEO(sus)
= 60 Vdc (Min) TIP120, TIP125
= 80 Vdc (Min) TIP121, TIP126
= 100 Vdc (Min) TIP122, TIP127
Low CollectorEmitter Saturation Voltage
V
CE(sat)
= 2.0 Vdc (Max) @ I
C
= 3.0 Adc
= 4.0 Vdc (Max) @ I
C
= 5.0 Adc
Monolithic Construction with BuiltIn BaseEmitter Shunt Resistors
PbFree Packages are Available*
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
TO220AB
CASE 221A
STYLE 1
MARKING
DIAGRAM
DARLINGTON
5 AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTORS
6080100 VOLTS, 65 WATTS
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1
2
3
4
TIP12x = Device Code
x = 0, 1, 2, 5, 6, or 7
A = Assembly Location
Y = Year
WW = Work Week
G = PbFree Package
TIP12xG
AYWW
See detailed ordering and shipping information on page 3 of
this data sheet.
ORDERING INFORMATION
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP)
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2
MAXIMUM RATINGS
Rating Symbol
TIP120,
TIP125
TIP121,
TIP126
TIP122,
TIP127
Unit
CollectorEmitter Voltage V
CEO
60 80 100 Vdc
CollectorBase Voltage V
CB
60 80 100 Vdc
EmitterBase Voltage V
EB
5.0 Vdc
Collector Current Continuous
Peak
I
C
5.0
8.0
Adc
Base Current I
B
120 mAdc
Total Power Dissipation @ T
C
= 25°C
Derate above 25°C
P
D
65
0.52
W
W/°C
Total Power Dissipation @ T
A
= 25°C
Derate above 25°C
P
D
2.0
0.016
W
W/°C
Unclamped Inductive Load Energy (Note 1) E 50 mJ
Operating and Storage Junction, Temperature Range T
J
, T
stg
65 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, JunctiontoCase
R
q
JC
1.92 °C/W
Thermal Resistance, JunctiontoAmbient
R
q
JA
62.5 °C/W
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. I
C
= 1 A, L = 100 mH, P.R.F. = 10 Hz, V
CC
= 20 V, R
BE
= 100 W
ELECTRICAL CHARACTERISTICS (T
C
= 25°C unless otherwise noted)
Characteristic
Symbol Min Max Unit
OFF CHARACTERISTICS
CollectorEmitter Sustaining Voltage (Note 2)
(I
C
= 100 mAdc, I
B
= 0) TIP120, TIP125
TIP121, TIP126
TIP122, TIP127
V
CEO(sus)
60
80
100
Vdc
Collector Cutoff Current
(V
CE
= 30 Vdc, I
B
= 0) TIP120, TIP125
(V
CE
= 40 Vdc, I
B
= 0) TIP121, TIP126
(V
CE
= 50 Vdc, I
B
= 0) TIP122, TIP127
I
CEO
0.5
0.5
0.5
mAdc
Collector Cutoff Current
(V
CB
= 60 Vdc, I
E
= 0) TIP120, TIP125
(V
CB
= 80 Vdc, I
E
= 0) TIP121, TIP126
(V
CB
= 100 Vdc, I
E
= 0) TIP122, TIP127
I
CBO
0.2
0.2
0.2
mAdc
Emitter Cutoff Current (V
BE
= 5.0 Vdc, I
C
= 0) I
EBO
2.0 mAdc
ON CHARACTERISTICS (Note 2)
DC Current Gain (I
C
= 0.5 Adc, V
CE
= 3.0 Vdc)
(I
C
= 3.0 Adc, V
CE
= 3.0 Vdc)
h
FE
1000
1000
CollectorEmitter Saturation Voltage
(I
C
= 3.0 Adc, I
B
= 12 mAdc)
(I
C
= 5.0 Adc, I
B
= 20 mAdc)
V
CE(sat)
2.0
4.0
Vdc
BaseEmitter On Voltage (I
C
= 3.0 Adc, V
CE
= 3.0 Vdc) V
BE(on)
2.5 Vdc
DYNAMIC CHARACTERISTICS
SmallSignal Current Gain (I
C
= 3.0 Adc, V
CE
= 4.0 Vdc, f = 1.0 MHz) h
fe
4.0
Output Capacitance (V
CB
= 10 Vdc, I
E
= 0, f = 0.1 MHz TIP125, TIP126, TIP127
TIP120, TIP121, TIP122
C
ob
300
200
pF
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%
TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP)
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3
Figure 1. Darlington Circuit Schematic
BASE
EMITTER
COLLECTOR
8.0 k 120
BASE
EMITTER
COLLECTOR
8.0 k 120
ORDERING INFORMATION
Device Package Shipping
TIP120 TO220 50 Units / Rail
TIP120G TO220
(PbFree)
50 Units / Rail
TIP121 TO220 50 Units / Rail
TIP121G TO220
(PbFree)
50 Units / Rail
TIP122 TO220 50 Units / Rail
TIP122G TO220
(PbFree)
50 Units / Rail
TIP125 TO220 50 Units / Rail
TIP125G TO220
(PbFree)
50 Units / Rail
TIP126 TO220 50 Units / Rail
TIP126G TO220
(PbFree)
50 Units / Rail
TIP127 TO220 50 Units / Rail
TIP127G TO220
(PbFree)
50 Units / Rail
80
0
0 20 40 60 80 100 120 160
Figure 2. Power Derating
T, TEMPERATURE (°C)
P
D
, POWER DISSIPATION (WATTS)
40
20
60
140
T
C
4.0
0
2.0
1.0
3.0
T
A
T
A
T
C

TIP127

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
Darlington Transistors PNP Power Darlington
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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