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500-00001

P1-P3P4-P6P7-P7
© Semiconductor Components Industries, LLC, 2007
March, 2007 − Rev. 6
1 Publication Order Number:
2N3903/D
2N3903, 2N3904
2N3903 is a Preferred Device
General Purpose
Transistors
NPN Silicon
Features
• Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage V
CEO
40 Vdc
Collector−Base Voltage V
CBO
60 Vdc
Emitter−Base Voltage V
EBO
6.0 Vdc
Collector Current − Continuous I
C
200 mAdc
Total Device Dissipation
@ T
A
= 25°C
Derate above 25°C
P
D
625
5.0
mW
mW/°C
Total Device Dissipation
@ T
C
= 25°C
Derate above 25°C
P
D
1.5
12
W
mW/°C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
−55 to +150 °C
THERMAL CHARACTERISTICS (Note 1)
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Ambient
R
q
JA
200 °C/W
Thermal Resistance, Junction−to−Case
R
q
JC
83.3 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Indicates Data in addition to JEDEC Requirements.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Preferred devices are recommended choices for future use
and best overall value.
MARKING DIAGRAMS
http://onsemi.com
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
ORDERING INFORMATION
COLLECTOR
3
2
BASE
1
EMITTER
2N
390x
ALYWG
G
x = 3 or 4
A = Assembly Location
L = Wafer Lot
Y = Year
W = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
1
2
3
1
2
BENT LEAD
TAPE & REEL
AMMO PACK
STRAIGHT LEAD
BULK PACK
3
TO−92
CASE 29
STYLE 1
2N3903, 2N3904
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 2)
(I
C
= 1.0 mAdc, I
B
= 0) V
(BR)CEO
40 − Vdc
Collector−Base Breakdown Voltage (I
C
= 10 mAdc, I
E
= 0)
V
(BR)CBO
60 − Vdc
Emitter−Base Breakdown Voltage (I
E
= 10 mAdc, I
C
= 0)
V
(BR)EBO
6.0 − Vdc
Base Cutoff Current (V
CE
= 30 Vdc, V
EB
= 3.0 Vdc) I
BL
− 50 nAdc
Collector Cutoff Current (V
CE
= 30 Vdc, V
EB
= 3.0 Vdc) I
CEX
− 50 nAdc
ON CHARACTERISTICS
DC Current Gain (Note 2)
(I
C
= 0.1 mAdc, V
CE
= 1.0 Vdc) 2N3903
2N3904
(I
C
= 1.0 mAdc, V
CE
= 1.0 Vdc) 2N3903
2N3904
(I
C
= 10 mAdc, V
CE
= 1.0 Vdc) 2N3903
2N3904
(I
C
= 50 mAdc, V
CE
= 1.0 Vdc) 2N3903
2N3904
(I
C
= 100 mAdc, V
CE
= 1.0 Vdc) 2N3903
2N3904
h
FE
20
40
35
70
50
100
30
60
15
30
−
−
−
−
150
300
−
−
−
−
−
Collector−Emitter Saturation Voltage (Note 2)
(I
C
= 10 mAdc, I
B
= 1.0 mAdc)
(I
C
= 50 mAdc, I
B
= 5.0 mAdc
V
CE(sat)
−
−
0.2
0.3
Vdc
Base−Emitter Saturation Voltage (Note 2)
(I
C
= 10 mAdc, I
B
= 1.0 mAdc)
(I
C
= 50 mAdc, I
B
= 5.0 mAdc)
V
BE(sat)
0.65
−
0.85
0.95
Vdc
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
(I
C
= 10 mAdc, V
CE
= 20 Vdc, f = 100 MHz) 2N3903
2N3904
f
T
250
300
−
−
MHz
Output Capacitance (V
CB
= 5.0 Vdc, I
E
= 0, f = 1.0 MHz) C
obo
− 4.0 pF
Input Capacitance (V
EB
= 0.5 Vdc, I
C
= 0, f = 1.0 MHz) C
ibo
− 8.0 pF
Input Impedance
(I
C
= 1.0 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz) 2N3903
2N3904
h
ie
1.0
1.0
8.0
10
k W
Voltage Feedback Ratio
(I
C
= 1.0 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz) 2N3903
2N3904
h
re
0.1
0.5
5.0
8.0
X 10
−4
Small−Signal Current Gain
(I
C
= 1.0 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz) 2N3903
2N3904
h
fe
50
100
200
400
−
Output Admittance (I
C
= 1.0 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz) h
oe
1.0 40
mmhos
Noise Figure
(I
C
= 100 mAdc, V
CE
= 5.0 Vdc, R
S
= 1.0 k W, f = 1.0 kHz) 2N3903
2N3904
NF
−
−
6.0
5.0
dB
SWITCHING CHARACTERISTICS
Delay Time
(V
CC
= 3.0 Vdc, V
BE
= 0.5 Vdc,
I
C
= 10 mAdc, I
B1
= 1.0 mAdc)
t
d
− 35 ns
Rise Time t
r
− 35 ns
Storage Time
(V
CC
= 3.0 Vdc, I
C
= 10 mAdc, 2N3903
I
B1
= I
B2
= 1.0 mAdc) 2N3904
t
s
−
−
175
200
ns
Fall Time t
f
− 50 ns
2. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2%.
2N3903, 2N3904
http://onsemi.com
3
ORDERING INFORMATION
Device Package Shipping
†
2N3903RLRM TO−92 2000 / Ammo Pack
2N3904 TO−92 5000 Units / Bulk
2N3904G TO−92
(Pb−Free)
5000 Units / Bulk
2N3904RLRA TO−92 2000 / Tape & Reel
2N3904RLRAG TO−92
(Pb−Free)
2000 / Tape & Reel
2N3904RLRM TO−92 2000 / Ammo Pack
2N3904RLRMG TO−92
(Pb−Free)
2000 / Ammo Pack
2N3904RLRP TO−92 2000 / Ammo Pack
2N3904RLRPG TO−92
(Pb−Free)
2000 / Ammo Pack
2N3904RL1G TO−92
(Pb−Free)
2000 / Tape & Reel
2N3904ZL1 TO−92 2000 / Ammo Pack
2N3904ZL1G TO−92
(Pb−Free)
2000 / Ammo Pack
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
Figure 1. Delay and Rise Time Equivalent Test Circuit
Figure 2. Storage and Fall Time Equivalent Test Circuit
+3 V
275
10 k
1N916
C
S
< 4 pF*
+3 V
275
10 k
C
S
< 4 pF*
< 1 ns
−0.5 V
+10.9 V
300 ns
DUTY CYCLE = 2%
< 1 ns
−9.1 V′
+10.9 V
DUTY CYCLE = 2%
t
1
0
10 < t
1
< 500 ms
* Total shunt capacitance of test jig and connectors
* Total shunt capacitance of test jig and connectors
P1-P3P4-P6P7-P7

500-00001

Mfr. #:
Buy 500-00001
Manufacturer:
Parallax
Description:
Bipolar Transistors - BJT 2N3904 Transistor
Lifecycle:
New from this manufacturer.
Delivery:
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