EAPDLP04SCAA4 Datasheet EAPDLP04SCAA4 | P1-P3

1

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4.8mm Semi-Lens Silicon PIN Photodiode

EAPDLP04SCAA4

Features

Fast response times

․High photo sensitivity

․Small junction capacitance

․Pb free

․The product itself will remain within RoHS compliant version.

.

Description

․EAPDLP04SCAA4 is a high speed and sensitive PIN photodiode in a flat side

view plastic package. Due to its water clear epoxy the device is sensitive

to visible and infrared radiation.

A

pplications

․High speed photo detector

․Camera

․Optoelectronic switch

․VCRs , Video camera

DATASHEET

2.75 ×5.25mm Silicon PIN Photodiode

EAPDLP04SCAA4

2

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Device Selection Guide

Chip

Materials

Lens Color

GaAlAs Water clrar

A

bsolute Maximum Ratings (Ta=25 )℃

Parameter Symbol Rating Unit

Reverse Voltage V

R

32

mA

Power Dissipation Pd

150

mW

Operating Temperature T

opr

-25 ~ +85

℃

Storage Temperature T

stg

-40 ~ +85

℃

Soldering Temperature(*1) T

sol

260

℃

Notes: *1: Soldering time≦5 seconds.

:

DATASHEET

2.75 ×5.25mm Silicon PIN Photodiode

EAPDLP04SCAA4

3

www.everlightamericas.com

Electro-Optical Characteristics (Ta=25 )℃

Parameter Symbol Min. Typ. Max. Unit Condition

Rang of Spectral

Bandwidth

λ

0.5

400 ----- 1100

nm

-----

Wavelength of Peak

Sensitivity

λp ----- 940 -----

nm

-----

Open-Circuit Voltage

V

OC

----- 0.41 -----

V

Ee=5m W/cm

2

λp=940nm

Short- Circuit Current

I

SC

--- 18

-----

uA

Ee=1m W/cm

2

λp=940nm

Reverse Light Current I

L

10.2 18

-----

uA

Ee=1m W/cm

2

λp=940nm

V

R

=5V

Dark Current Id ---- 5 30

nA

Ee=0m W/cm

2

V

R

=10V

Reverse Breakdown B

VR

32 170 -----

V

Ee=0m W/cm

2

IR=100μA

Total Capacitance Ct ---- 25 ----

pF

Ee=0m W/cm

2

V

R

=3V

f=1MHZ

Rise/Fall Time tr/tf ---- 50/50 ----

ns

V

R

=10V

R

L

=1KΩ

EAPDLP04SCAA4

EAPDLP04SCAA4

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