TM8050H-8W

P1-P3 P4-P6 P7-P9

May 2016

Doc029171 Rev 1

1/9

This is information on a product in full production.

www.st.com

TM8050H-8W

80 A high temperature Thyristor (SCR)

Datasheet - production data

Features

 High junction temperature: T

j

= 150 °C

 Blocking voltage: V

DRM

= V

RRM

= 800 V

 Nominal current: I

T(RMS)

= 80 A

 Gate triggering current: I

GT

max. = 50 mA

 High noise immunity: dV/dt > 1 kV/µs

 Through hole package TO-247

 Ecopack

®

2 (includes halogen free & RoHS

compliance)

 Increase of thermal margin due to extended

T

j

up to 150 °C

 Low I

D

and I

R

in blocking state

Applications

 Solid state switch

 Battery charging system

 Variable speed motor drive

 Industrial welding systems

 AC-DC rectifier controlled bridge

 Soft starter systems

Description

Available in high power package (TO-247), the

device is suitable in applications where power

switching (I

T(RMS)

= 80 A at T

C

= 126 °C) and

power dissipation (V

TM

= 1.55 V at 160 A) are

critical, such as motorbike voltage regulator, by-

pass AC switch, controlled rectifier bridge, solid

state relay, battery charger, welding equipment

and motor driver applications. The TM8050H-8W

is available in through hole TO-247 package.

Table 1: Device summary

Symbol

Value

I

T(RMS)

80 A

V

DRM

/V

RRM

800 V

I

GT

50 mA

T

j

150 °C

TO-247 uninsulated

K

A

G

A

G

K

TAB = A

Characteristics

TM8050H-8W

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Doc029171 Rev 1

1 Characteristics

Table 2: Absolute ratings (limiting values)

Symbol

Parameter

Value

Unit

I

T(RMS)

RMS on-state current (180 ° conduction

angle)

T

C

= 126 °C

80

A

I

T(AV)

Average on-state current (180 ° conduction

angle)

50

A

I

TSM

Non repetitive surge peak

on-state current

t

p

= 8.3 ms

T

j

initial = 25 °C

731

A

t

p

= 10 ms

670

I

2

t

I

2

t value for fusing

T

j

= 25 °C

2245

A

2

s

V

RRM

/

V

DRM

Maximum repetitive symmetric blocking voltage

800

V

dl/dt

Critical rate of rise of on-

state current

I

G

= 2 x I

GT

, tr ≤ 100 ns

f = 50 Hz

T

j

= 25 °C

200

A/µs

I

GM

Peak gate current

t

p

= 20 µs

T

j

= 150 °C

8

A

P

G(AV)

Average gate power dissipation

T

j

= 150 °C

1

W

V

RGM

Maximum peak reverse gate voltage

5

V

T

stg

Storage junction temperature range

-40 to +150

°C

T

j

Maximum operating junction temperature

-40 to +150

°C

Table 3: Electrical characteristics (T

j

= 25 °C unless otherwise specified)

Symbol

Test Conditions

Value

Unit

I

GT

V

D

= 12 V, R

L

= 33 Ω

Min.

2.5

mA

Max.

50

V

GT

V

D

= 12 V, R

L

= 33 Ω

Max.

1.5

V

V

GD

V

D

= V

DRM

, R

L

= 3.3 kΩ

T

j

= 150 °C

Min.

0.2

V

I

H

I

T

= 500 mA, gate open

Max.

100

mA

I

L

I

G

= 1.2 x I

GT

Max.

125

mA

t

gt

I

T

= 80 A, V

D

= V

DRM

, I

G

= 200 mA, dI

G

/dt = 0.2 A/µs

Typ.

3

µs

dV/dt

V

D

= 67 % V

DRM

, gate open

T

j

= 150 °C

Min.

1000

V/µs

t

q

I

T

= 33 A, dI

T

/dt = 10 A/µs, V

R

= 75 V,

V

D

= 400 V, dV

D

/dt = 20 V/µs, t

P

= 100 µs

T

j

= 150 °C

Max.

150

µs

V

TM

I

TM

= 160 A, t

P

= 380 µs

T

j

= 25 °C

Max.

1.55

V

V

TO

Threshold voltage

T

j

= 150 °C

Max.

0.85

V

R

D

Dynamic resistance

T

j

= 150 °C

Max.

5.5

mΩ

I

DRM

V

D

= V

DRM

= V

R

= V

RRM

= 800 V

T

j

= 25 °C

Max.

20

µA

I

RRM

T

j

= 150 °C

Max.

2.5

mA

TM8050H-8W

Characteristics

Doc029171 Rev 1

3/9

Table 4: Thermal parameters

Symbol

Parameter

Value

Unit

R

th(j-c)

Junction to case (DC,max.)

0.30

°C/W

R

th(j-a)

Junction to ambient (DC, typ., S

cu

= 2.1 cm

2

)

50

P1-P3 P4-P6 P7-P9

TM8050H-8W

Mfr. #:

Manufacturer:

STMicroelectronics

Description:

SCRs 80 A High Temperature Thyristor (SCR)

Lifecycle:

New from this manufacturer.

Delivery:

DHL FedEx Ups TNT EMS

Payment:

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Products related to this Datasheet

TM8050H-8W