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IXYN100N65A3

P1-P3P4-P6
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYN100N65A3
Fig. 7. Transconductance
0
10
20
30
40
50
60
70
80
90
0 20 40 60 80 100 120 140 160 180 200 220
I
C
- Amperes
g
f s
-
Siemens
T
J
= - 40ºC
25ºC
150ºC
Fig. 10. Reverse-Bias Safe Operating Area
0
20
40
60
80
100
120
140
160
180
200
220
100 200 300 400 500 600 700
V
CE
- Volts
I
C
- Amperes
T
J
= 150ºC
R
G
= 2
Ω
dv / dt < 10V / ns
Fig. 8. Gate Charge
0
2
4
6
8
10
12
14
16
0 20 40 60 80 100 120 140 160
Q
G
- NanoCoulombs
V
GE
- Volts
V
CE
= 325V
I
C
= 70A
I
G
= 10mA
Fig. 9. Capacitance
10
100
1,000
10,000
0 5 10 15 20 25 30 35 40
V
CE
- Volts
Capacitance - PicoFarad
s
f
= 1 MH
z
C
ies
C
oes
C
res
Fig. 12. Maximum Transient Thermal Impedance
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W
Fig. 11. Forward-Bias Safe Operating Area
0.01
0.1
1
10
100
1000
1 10 100 1000
V
DS
- Volts
I
D
- Amperes
T
J
= 175ºC
T
C
= 25ºC
Single Pulse
25µs
1ms
10ms
V
CE(sat)
Limi
t
100µs
100ms
© 2014 IXYS CORPORATION, All Rights Reserved
IXYN100N65A3
Fig. 13. Inductive Switching Energy Loss vs.
Gate Resistance
1
2
3
4
5
6
2468101214
R
G
- Ohms
E
off
- MilliJoules
1
3
5
7
9
11
E
on
- MilliJoules
E
off
E
on
- - - -
T
J
= 150ºC , V
GE
= 15V
V
CE
= 400V
I
C
= 50A
I
C
= 100A
Fig. 16. Inductive Turn-off Switching Times vs.
Gate Resistance
80
100
120
140
160
180
200
220
23456789101112131415
R
G
- Ohms
t
f i
- Nanoseconds
140
180
220
260
300
340
380
420
t
d(off)
- Nanoseconds
t
f i
t
d(off)
- - - -
T
J
= 150ºC, V
GE
= 15V
V
CE
= 400V
I
C
= 100A
I
C
= 50A
Fig. 14. Inductive Switching Energy Loss vs.
Collector Current
0
1
2
3
4
5
6
7
50 55 60 65 70 75 80 85 90 95 100
I
C
- Amperes
E
off
- MilliJoules
1
2
3
4
5
6
7
8
E
on
- MilliJoules
E
off
E
on
- - - -
R
G
= 2
Ω
,
V
GE
= 15V
V
CE
= 400V
T
J
= 150ºC
T
J
= 25ºC
Fig. 15. Inductive Switching Energy Loss vs.
Junction Temperature
0
1
2
3
4
5
6
7
25 50 75 100 125 150
T
J
- Degrees Centigrade
E
off
- MilliJoules
1
2
3
4
5
6
7
8
E
on
- MilliJoules
E
off
E
on
- - - -
R
G
= 2
Ω ,
V
GE
= 15V
V
CE
= 400V
I
C
= 50A
I
C
= 100A
Fig. 17. Inductive Turn-off Switching Times vs.
Collector Current
40
60
80
100
120
140
160
180
200
220
240
50 55 60 65 70 75 80 85 90 95 100
I
C
- Amperes
t
f i
- Nanosecond
s
60
100
140
180
220
260
t
d(off)
- Nanoseconds
t
f i
t
d(off)
- - - -
R
G
= 2
Ω
, V
GE
= 15V
V
CE
= 400V
T
J
= 150ºC
T
J
= 25ºC
Fig. 18. Inductive Turn-off Switching Times vs.
Junction Temperature
60
80
100
120
140
160
180
200
220
25 50 75 100 125 150
T
J
- Degrees Centigrade
t
f i
- Nanosecond
s
80
100
120
140
160
180
200
220
240
t
d(off)
- Nanoseconds
t
f i
t
d(off)
- - - -
R
G
= 2
Ω
, V
GE
= 15V
V
CE
= 400V
I
C
= 100A
I
C
= 50A
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYN100N65A3
IXYS REF: IXY_100N65A3(7D) 7-16-13
Fig. 20. Inductive Turn-on Switching Times vs.
Collector Current
0
20
40
60
80
100
120
140
50 55 60 65 70 75 80 85 90 95 100
I
C
- Amperes
t
r i
- Nanosecond
s
24
26
28
30
32
34
36
38
t
d(on)
- Nanoseconds
t
r i
t
d(on)
- - - -
R
G
= 2
Ω
, V
GE
= 15V
V
CE
= 400V
T
J
= 25ºC
T
J
= 150ºC
Fig. 21. Inductive Turn-on Switching Times vs.
Junction Temperature
0
20
40
60
80
100
120
140
160
25 50 75 100 125 150
T
J
- Degrees Centigrade
t
r i
- Nanosecond
s
22
24
26
28
30
32
34
36
38
t
d(on)
- Nanoseconds
t
r i
t
d(on)
- - - -
R
G
= 2
Ω
, V
GE
= 15V
V
CE
= 400V
I
C
= 100A
I
C
= 50A
Fig. 19. Inductive Turn-on Switching Times vs.
Gate Resistance
20
40
60
80
100
120
140
160
180
23456789101112131415
R
G
- Ohms
t
r i
- Nanosecond
s
20
28
36
44
52
60
68
76
84
t
d(on)
- Nanoseconds
t
r i
t
d(on)
- - - -
T
J
= 150ºC, V
GE
= 15V
V
CE
= 400V
I
C
= 50A
I
C
= 100A
P1-P3P4-P6

IXYN100N65A3

Mfr. #:
Buy IXYN100N65A3
Manufacturer:
Littelfuse
Description:
IGBT Transistors DISC IGBT XPT-GENX3 (MINI
Lifecycle:
New from this manufacturer.
Delivery:
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