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HSMF-C167
P1-P3
P4-P6
P7-P8
4
Intensity (I
v
) Bin Limits
[1]
Intensity @ 20 mA (mcd)
Bin ID
Min.
Max.
A
0.11 0.18
B
0.18 0.29
C
0.29 0.45
D
0.45 0.72
E
0.72 1.10
F
1.10 1.80
G
1.80 2.80
H
2.80 4.50
J
4.50 7.20
K
7.20 11.20
L
11.20 18.00
M
18.00 28.50
N
28.50 45.00
P
45.00 71.50
Q
71.50 112.50
R
112.50 180.00
S
180.00 285.00
T
285.00 450.00
U
450.00 715.00
V
715.00 1125.00
W
1125.00 1800.00
X
1800.00 2850.00
Y
2850.00 4500.00
T
olerance: ± 15%.
Color Bin Limits
[1]
Y
ellow/Amber Color Bins
[1]
Dom. Wa
velength (nm)
Bin ID
Min.
M
ax.
A
582.0 584.5
B
584.5 587.0
C
587.0 589.5
D
589.5 592.0
E
592.0 594.5
F
594.5 597.0
T
olerance: ± 0.5 nm
InGaN Green Color Bins
[1]
Dom. Wa
velength (nm)
Bin ID
Min.
M
ax.
A
515.0 520.0
B
520.0 525.0
C
525.0 530.0
D
530.0 535.0
T
olerance: ± 1 nm
Note:
1. Bin categories are established for classifi-
cation of products. Pr
oducts may not be
available in all categories. P
lease contact
your Av
ago representativ
e for information
on currently available bins
.
Note:
1. Bin categories are established for classifi-
cation of products. Pr
oducts may not be
available in all categories. P
lease contact
your Av
ago representativ
e for information
on currently available bins
.
Green Color Bins
[1]
Dom. Wa
velength (nm)
Bin ID
Min.
M
ax.
A
561.5 564.5
B
564.5 567.5
C
567.5 570.5
D
570.5 573.5
E
573.5 576.5
T
olerance: ± 0.5 nm
Blue Color Bins
[1]
Dom. Wa
velength (nm)
Bin ID
Min.
M
ax.
A
460.0 465.0
B
465.0 470.0
C
470.0 475.0
D
475.0 480.0
T
olerance: ± 1 nm
Orange Color Bins
[1]
Dom. Wa
velength (nm)
Bin ID
Min.
M
ax.
A
597.0 600.0
B
600.0 603.0
C
603.0 606.0
D
606.0 609.0
E
609.0 612.0
F
612.0 615.0
T
olerance: ± 1 nm
5
Figure 2. F
orward current vs. forward voltage.
Figure 1. Relativ
e intensity vs. w
avelength.
Figure 3. Luminous intensity vs
. forward current.
400
100
0
600
700
20
RELATIVE INTENSITY – %
WAVELENGTH – nm
500
HSMF-C16x fig 1
60
40
80
450
550
650
10
50
30
70
90
AS
AMBER
AS
RED
InGaN
BLUE
InGaN
GREEN
AS
ORANGE
GaP GREEN
GaP YELLOW
GaP ORANGE
HER
500
550
600
650
700
750
WAVELENGTH - nm
RELATIVE INTENSITY
1.0
0.5
0
100
10
1
0.1
1.5
2.5
3.5
4.0
V
F
– FORWARD VOLTAGE – V
I
F
– FORWARD CURRENT – mA
3.0
HSMF-C16x fig 2
2.0
InGaN
AS AlInGaP
1.5
1.6
1.7
1.8
1.9
2
2.1
2.2
2.3
V
F
– FORWARD VOL
TA
GE – V
I
F
– FORWARD CURRENT – mA
100
10
1
0
HER
GaP
ORANGE
GaP YELLOW
GaP GREEN
0
5
15
I
F
– FORWARD CURRENT – mA
0
0.4
1.0
LUMINOUS INTENSITY
(NORMALIZED AT 20 mA)
20
0.6
0.2
0.8
10
30
1.4
25
1.2
GaP
0
5
15
I
F
– FORWARD CURRENT – mA
0
0.4
1.4
LUMINOUS INTENSITY
(NORMALIZED AT 20 mA)
HSMF-C16x fig 3a
30
0.8
0.2
1.0
10
0.6
1.2
AS AlInGaP
20
25
0
4
12
I
F
– FORWARD CURRENT – mA
0
0.4
1.4
1.6
LUMINOUS INTENSITY
(NORMALIZED AT 10 mA)
HSMF-C16x fig 3b
16
0.8
0.2
1.0
8
0.6
1.2
2
6
10
14
InGaN
6
Figure 4. Maximum forward current vs. ambient
temperature
.
Figure 5. Relativ
e intensity vs. angle
.
Figure 7. Recommended Pb-free reflow soldering profile.
Figure 8. Recommended soldering pad pattern.
Figure 6. Recommended reflow soldering pr
ofile.
0
25
0
20
60
80
100
5
I
F MAX.
– MAXIMUM FORWARD CURRENT – mA
T
A
– AMBIENT TEMPERATURE – °C
40
15
20
10
10
30
50
70
90
InGaN
AlInGaP/GaP
HSMF-C16x fig 5
RELATIVE INTENSITY – %
100
0
ANGLE
80
60
50
70
20
10
30
40
90
-70
-50
-30
0
20
30
50
70
90
-90
-20
-80
-60
-40
-10
10
40
60
80
230°C MAX.
10 SEC. MAX.
4°C/SEC.
MAX.
OVER 2 MIN.
TIME
TEMPERATURE
4°C/SEC. MAX.
140-160°C
3°C/SEC. MAX.
217°C
200°C
60 - 120 SEC.
6°C/SEC. MAX.
3°C/SEC. MAX.
3°C/SEC. MAX.
150°C
255 - 260°C
100 SEC. MAX.
(Acc. to J-STD-020C)
10 - 30 SEC.
TIME
TEMPERATURE
HSMF-C16x fig 7
0.70
(0.028)
0.70
(0.028)
0.30
(0.012)
0.40
(0.016)
0.60
(0.024)
0.40
(0.016)
P1-P3
P4-P6
P7-P8
HSMF-C167
Mfr. #:
Buy HSMF-C167
Manufacturer:
Broadcom / Avago
Description:
Standard LEDs - SMD Grn/Org Bi-Color
Lifecycle:
New from this manufacturer.
Delivery:
DHL
FedEx
Ups
TNT
EMS
Payment:
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