Type
IPB081N06L3 G IPP084N06L3 G
IPI084N06L3 G
OptiMOS
™
3 Power-Transistor
Features
• Ideal for high frequency switching and sync. rec.
• Optimized technology for DC/DC converters
• Excellent gate charge x R
DS(on)
product (FOM)
• N-channel, logic level
• 100% avalanche tested
• Pb-free plating; RoHS compliant
• Qualified according to JEDEC
1)
for target applications
• Halogen-free according to IEC61249-2-21
V
DS
60 V
R
DS(on),max (SMD)
8.1
mΩ
I
D
50 A
Product Summary
Type IPB081N06L3 G IPP084N06L3 G IPI084N06L3 G
Package PG-TO263-3 PG-TO220-3 PG-TO262-3
Rev. 2.24 page 1 2012-11-28
Maximum ratings, at T
j
=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous drain current
I
D
T
C
=25 °C
2)
50 A
T
C
=100 °C
50
Pulsed drain current
3)
I
D,pulse
T
C
=25 °C
200
Avalanche energy, single pulse
4)
E
AS
I
D
=50 A, R
GS
=25 Ω
43 mJ
Gate source voltage
V
GS
±20 V
Power dissipation
P
tot
T
C
=25 °C
79 W
Operating and storage temperature
T
j
, T
stg
-55 ... 175 °C
4)
See figure 13 for more detailed information
Value
1)
J-STD20 and JESD22
2)
Current is limited by bondwire; with an R
thJC
=1.9 K/W the chip is able to carry 73 A.
3)
See figure 3 for more detailed information
Package PG-TO263-3 PG-TO220-3 PG-TO262-3
Marking 081N06L 084N06L 084N06L
Rev. 2.24 page 1 2012-11-28
