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IPI084N06L3GXKSA1

P1-P3P4-P6P7-P9P10-P11
IPB081N06L3 G IPP084N06L3 G
IPI084N06L3 G
13 Avalanche characteristics 14 Typ. gate charge
I
AS
=f(t
AV
); R
GS
=25 Ω
V
GS
=f(Q
gate
); I
D
=50 A pulsed
parameter: T
j(start)
parameter: V
DD
12 V
30 V
48 V
0
2
4
6
8
10
0 1020304050
V
GS
[V]
Q
gate
[nC]
25 °C
100 °C
150 °C
1
10
100
0.1 1 10 100 1000
I
AS
[A]
t
AV
[µs]
Rev. 2.24 page 7 2012-11-28
15 Drain-source breakdown voltage 16 Gate charge waveforms
V
BR(DSS)
=f(T
j
); I
D
=1 mA
12 V
30 V
48 V
0
2
4
6
8
10
0 1020304050
V
GS
[V]
Q
gate
[nC]
50
55
60
65
70
-60 -20 20 60 100 140 180
V
BR(DSS)
[V]
T
j
[°C]
V
GS
Q
gate
V
gs(th)
Q
g(th)
Q
gs
Q
gd
Q
sw
Q
g
25 °C
100 °C
150 °C
1
10
100
0.1 1 10 100 1000
I
AS
[A]
t
AV
[µs]
Rev. 2.24 page 7 2012-11-28
IPB081N06L3 G IPP084N06L3 G
IPI084N06L3 G
PG-TO220-3
Rev. 2.24 page 8 2012-11-28Rev. 2.24 page 8 2012-11-28
IPB081N06L3 G IPP084N06L3 G
IPI084N06L3 G
PG-TO262-3
Rev. 2.24 page 9 2012-11-28Rev. 2.24 page 9 2012-11-28
P1-P3P4-P6P7-P9P10-P11

IPI084N06L3GXKSA1

Mfr. #:
Buy IPI084N06L3GXKSA1
Manufacturer:
Infineon Technologies
Description:
MOSFET N-Ch 60V 50A I2PAK-3
Lifecycle:
New from this manufacturer.
Delivery:
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