1SS403
TOSHIBA Diode Silicon Epitaxial Planar Type
1SS403
High Voltage Switching Applications
AEC-Q101 Qualified (Note1)
Two-pin small packages are suitable for higher mounting densities.
Excellent in forward current and forward voltage
characteristics : V
F
(2)
= 0.90V (typ.)
Fast reverse recovery time : t
rr
= 60ns (max)
Small total capacitance : C
T
= 1.5pF (typ.)
Note1: For detail information, please contact to our sales.
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic Symbol Rating Unit
Maximum (peak) reverse voltage V
RM
250 V
Reverse voltage V
R
200 V
Maximum (peak) forward current I
FM
300 mA
Average forward current I
O
100 mA
Surge current (10ms) I
FSM
2 A
Power dissipation P 200 * mW
Junction temperature T
j
125 °C
Storage temperature range T
stg
−55 to 125 °C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*: When mounted on a glass epoxy board PCB: 20 mm × 20 mm,
with copper pad 4 mm × 4 mm.
Electrical Characteristics
(Ta = 25°C)
Characteristic Symbol
Test
Test Condition Min Typ. Max Unit
Forward voltage
V
F (1)
― I
F
= 10mA ― 0.72 1.0
V
V
F (2)
― I
F
= 100mA ― 0.90 1.2
Reverse current
I
R (1)
― V
R
= 50V ― ― 0.1
μA
I
R (2)
― V
R
= 200V ― ― 1.0
Total capacitance C
T
― V
R
= 0, f = 1MHz ― 1.5 3.0 pF
Reverse recovery time t
rr
― I
F
= 10mA (Fig. 1) ― 10 60 ns
JEDEC
―
Start of commercial production
1998-10
2015-01-09
1
