IRG4BC30W-SPbF
www.irf.com 5
0 10 20 30 40 50
0.0
0.1
0.2
0.3
0.4
0.5
R , Gate Resistance (Ohm)
Total Switching Losses (mJ)
G
V = 480V
V = 15V
T = 25 C
I = 12A
CC
GE
J
C
°
-60 -40 -20 0 20 40 60 80 100 120 140 160
0.01
0.1
1
10
T , Junction Temperature ( C )
Total Switching Losses (mJ)
J
°
R = Ohm
V = 15V
V = 480V
G
GE
CC
I = A
24
C
I = A
12
C
I = A
6
C
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
1 10 100
0
500
1000
1500
2000
V , Collector-to-Emitter Voltage (V)
C, Capacitance (pF)
CE
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C SHORTED
GE
ies ge gc , ce
res gc
oes ce gc
C
ies
C
oes
C
res
23Ω
R
G
, Gate Resistance (Ω)
0 10 20 30 40 50 60
0
4
8
12
16
20
Q , Total Gate Charge (nC)
V , Gate-to-Emitter Voltage (V)
G
GE
V = 400V
I = 12A
CC
C
