SSM3J35CTC
3
5.
5.
5.
5. Electrical Characteristics
Electrical Characteristics
Electrical Characteristics
Electrical Characteristics
5.1.
5.1.
5.1.
5.1. Static Characteristics (Unless otherwise specified, T
Static Characteristics (Unless otherwise specified, T
Static Characteristics (Unless otherwise specified, T
Static Characteristics (Unless otherwise specified, T
a
a
a
a
= 25
= 25
= 25
= 25
)
)
)
)
Characteristics
Gate leakage current
Drain cut-off current
Drain-source breakdown voltage
Drain-source breakdown voltage
Gate threshold voltage
Drain-source on-resistance
Forward transfer admittance
(Note 1)
(Note 2)
(Note 3)
(Note 3)
Symbol
I
GSS
I
DSS
V
(BR)DSS
V
(BR)DSX
V
th
R
DS(ON)
|Y
fs
|
Test Condition
V
DS
= 0 V, V
GS
= ±10 V
V
DS
= -20 V, V
GS
= 0 V
I
D
= -1 mA, V
GS
= 0 V
I
D
= -1 mA, V
GS
= 10 V
V
DS
= -10 V, I
D
= -100 µA
I
D
= -10 mA, V
GS
= -1.2 V
I
D
= -20 mA, V
GS
= -1.5 V
I
D
= -50 mA, V
GS
= -1.8 V
I
D
= -150 mA, V
GS
= -2.5 V
I
D
= -150 mA, V
GS
= -4.5 V
V
DS
= -10 V, I
D
= -100 mA
Min
-20
-10
-0.3
Typ.
3.2
2.3
2.0
1.5
1.1
430
Max
±1
-1
-1
20
4.0
2.9
2.1
1.4
Unit
µA
V
Ω
mS
Note 1: If a reverse bias is applied between gate and source, this device enters V
(BR)DSX
mode. Note that the drain-
source breakdown voltage is lowered in this mode.
Note 2: Let V
th
be the voltage applied between gate and source that causes the drain current (I
D
) to below (-100 µA
for this device). Then, for normal switching operation, V
GS(ON)
must be higher than V
th
, and V
GS(OFF)
must be
lower than V
th
. This relationship can be expressed as: V
GS(OFF)
< V
th
< V
GS(ON)
.
Take this into consideration when using the device.
Note 3: Pulse measurement.
5.2.
5.2.
5.2.
5.2. Dynamic Characteristics (Unless otherwise specified, T
Dynamic Characteristics (Unless otherwise specified, T
Dynamic Characteristics (Unless otherwise specified, T
Dynamic Characteristics (Unless otherwise specified, T
a
a
a
a
= 25
= 25
= 25
= 25
)
)
)
)
Characteristics
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time (rise time)
Switching time (turn-on delay time)
Switching time (fall time)
Switching time (turn-off delay time)
Symbol
C
iss
C
rss
C
oss
t
r
t
d(on)
t
f
t
d(off)
Test Condition
V
DS
= -10 V, V
GS
= 0 V,
f = 1 MHz
V
DD
= -10 V, I
D
= -50 mA,
V
GS
= 0 to -4.5 V, R
G
= 10 Ω
Duty ≤ 1%, V
IN
: t
r
, t
f
< 5 ns,
Common source, See Chapter 5.3.
Min
Typ.
21
2
6
42
17
145
420
Max
42
Unit
pF
ns
5.3.
5.3.
5.3.
5.3. Switching Time Test Circuit
Switching Time Test Circuit
Switching Time Test Circuit
Switching Time Test Circuit
Fig.
Fig.
Fig.
Fig. 5.3.1
5.3.1
5.3.1
5.3.1 Switching Time Test Circuit
Switching Time Test Circuit
Switching Time Test Circuit
Switching Time Test Circuit Fig.
Fig.
Fig.
Fig. 5.3.2
5.3.2
5.3.2
5.3.2 Input Waveform/Output Waveform
Input Waveform/Output Waveform
Input Waveform/Output Waveform
Input Waveform/Output Waveform
2016-02-12
Rev.1.0
©2016 Toshiba Corporation