ZXTP25100CFHTA Datasheet ZXTP25100CFHTA | P4-P6

ZXTP25100CFH

Document Number: DS33758 Rev. 3 - 2

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ZXTP25100CFH

Electrical Characteristics (@T

A

= +25°C, unless otherwise specified.)

Characteristic Symbol Min Typ Max Unit Test Condition

Collector-Base Breakdown Voltage

BV

CBO

-115 -180 - V

I

C

= -100µA

Collector-Emitter Breakdown Voltage (Note 10)

BV

CEO

-100 -140 - V

I

C

= -10mA

Emitter-Base Breakdown Voltage

BV

EBO

-7 -8.4 - V

I

E

= -100µA

Emitter-Base Breakdown Voltage

BV

ECX

-7 -8.3 - V

I

E

= -100µA, R

BC

< 1kΩ or

-0.25 < V

BC

< 0.25V

Emitter-Base Breakdown Voltage

BV

ECO

-7 -8.8 - V

I

E

= -100µA

Collector-Base Cutoff Current

I

CBO

- < -1 -50 nA

V

CB

= -115V

- - -0.5 µA

V

CB

= -115V, T

amb

= 100°C

Collector-Emitter Cutoff Current

I

CEX

- - -100 nA

V

CE

= -90V, R

BE

< 1kΩ or

-0.25V < V

BE

< 1V

Emitter-Base Cutoff Current

I

EBO

- < -1 -50 nA

V

EB

= -5.6V

Static Forward Current Transfer Ratio (Note 10)

h

FE

200 350 500

-

I

C

= -10mA, V

CE

= -2V

180 320 -

I

C

= -100mA, V

CE

= -2V

110 190 -

I

C

= -500mA, V

CE

= -2V

20 35 -

I

C

= -1A, V

CE

= -2V

Collector-Emitter Saturation Voltage (Note 10)

V

CE(sat)

- -140 -210

mV

I

C

= - 100mA, I

B

= -1mA

- -80 -110

I

C

= - 500mA, I

B

= -50mA

- -180 -310

I

C

= - 500mA, I

B

= -20mA

- -150 -220

I

C

= - 1A, I

B

= -100mA

Base-Emitter Saturation Voltage (Note 10)

V

BE

(

sat

)

- -849 -950 mV

I

C

= -1A, I

B

= -100mA

Base-Emitter Saturation Voltage (Note 10)

V

BE

(

on

)

- -790 -900 mV

I

C

= -1A, V

CE

= -2V

Output Capacitance

C

obo

- 14.1 20 pF

V

CB

= -10V, f = 1MHz

Transition Frequency

f

T

- 180 - MHz

V

CE

= -15V, I

C

= -20mA,

f = 100MHz

Delay Time

t

(

d

)

- 15.8 - ns

V

CC

= -10V, I

C

= -500mA,

I

B1

= I

B2

= -50mA

Rise Time

t

(

r

)

- 41 - ns

Storage Time

t

(

s

)

- 411 - ns

Fall Time

t

(

f

)

- 89 - ns

Notes: 10.

Measured under pulsed conditions. Pulse width ≤ 300 µs. Duty cycle ≤ 2%

ZXTP25100CFH

Document Number: DS33758 Rev. 3 - 2

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ZXTP25100CFH

Typical Electrical Characteristics @T

A

= 25°C unless otherwise specified

1m 10m 100m 1

10m

100m

1

10m 100m 1

0.0

0.1

0.2

0.3

0.4

1m 10m 100m 1

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1m 10m 100m 1

0.2

0.4

0.6

0.8

1.0

1m 10m 100m 1

0.2

0.4

0.6

0.8

1.0

10m 100m 1 10 100

0

20

40

60

80

100

120

140

160

180

200

0

100

200

300

400

500

600

I

C

/I

B

=100

V

CE(SAT)

v I

C

Tamb=25°C

I

C

/I

B

=50

I

C

/I

B

=25

I

C

/I

B

=10

- V

CE(SAT)

(V)

- I

C

Collector Current (A)

100°C

V

BE(SAT)

v I

C

I

C

/I

B

=10

150°C

25°C

-55°C

- V

CE(SAT)

(V)

- I

C

Collector Current (A)

150°C

h

FE

v I

C

V

CE

=2V

-55°C

25°C

100°C

Normalised Gain

- I

C

Collector Current (A)

150°C

25°C

V

CE(SAT)

v I

C

I

C

/I

B

=10

100°C

-55°C

- V

BE(SAT)

(V)

- I

C

Collector Current (A)

150°C

V

BE(ON)

v I

C

V

CE

=2V

100°C

25°C

-55°C

- V

BE(ON)

(V)

- I

C

Collector Current (A)

Capacitance v Voltage

f = 1MHz

Cobo

Cibo

Capacitance (pF)

- Voltage(V)

Typical Gain (h

FE

)

ZXTP25100CFH

Document Number: DS33758 Rev. 3 - 2

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Package Outline Dimensions

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.

Suggested Pad Layout

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.

SOT23

Dim Min Max Typ

A 0.37 0.51 0.40

B 1.20 1.40 1.30

C 2.30 2.50 2.40

D 0.89 1.03 0.915

F 0.45 0.60 0.535

G 1.78 2.05 1.83

H 2.80 3.00 2.90

J 0.013 0.10 0.05

K 0.903 1.10 1.00

K1 - - 0.400

L 0.45 0.61 0.55

M 0.085 0.18 0.11

α

0° 8° -

All Dimensions in mm

Dimensions Value (in mm)

Z 2.9

X 0.8

Y 0.9

C

2.0

E

1.35

A

M

J

L

D

F

B

C

H

K

G

K1

X

E

Y

C

Z

ZXTP25100CFHTA

ZXTP25100CFHTA

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