IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXGH20N140C3H1
IXGT20N140C3H1
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, Unless Otherwise Specified) Min. Typ. Max.
g
fs
I
C
= I
C100
, V
CE
= 10V, Note 1 10 17 S
C
ies
1790 pF
C
oes
V
CE
= 25V, V
GE
= 0V, f = 1MHz 145 pF
C
res
50 pF
Q
g
88 nC
Q
ge
I
C
= I
C100
, V
GE
= 15V, V
CE
= 0.5 • V
CES
18 nC
Q
gc
30 nC
t
d(on)
19 ns
t
ri
12 ns
E
on
1.35 mJ
t
d(off)
110 ns
t
fi
32 ns
E
off
0.44 0.80 mJ
t
d(on)
22 ns
t
ri
13 ns
E
on
2.33 mJ
t
d(off)
144 ns
t
fi
380 ns
E
off
1.64 mJ
R
thJC
0.50 °C/W
R
thCK
TO-247 0.21 °C/W
Inductive load, T
J
= 25°C
I
C
= I
C100
, V
GE
= 15V
V
CE
= 0.5 • V
CES
, R
G
= 5Ω
Note 2
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
Reverse Diode (FRED)
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, Unless Otherwise Specified) Min. Typ. Max.
V
F
I
F
= 20A, V
GE
= 0V, Note 1 3.0 V
T
J
= 125°C 2.8 V
I
RM
19 A
t
rr
70 ns
R
thJC
0.9 °C/W
I
F
= 20A, V
GE
= 0V,
-di
F
/dt = 750A/μs, V
R
= 800V
Notes:
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
2. Switching times & energy losses may increase for higher V
CE
(Clamp), T
J
or R
G
.
TO-247 Outline
TO-268 Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A
1
2.2 2.54 .087 .102
A
2
2.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b
1
1.65 2.13 .065 .084
b
2
2.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
Terminals: 1 - Gate 2 - Collector
3 - Emitter
Terminals: 1 - Gate 2 & 4 - Collector
3 - Emitter
Inductive load, T
J
= 125°C
I
C
= I
C100
, V
GE
= 15V
V
CE
= 0.5 • V
CES
, R
G
= 5Ω
Note 2
∅ P
1 2 3
