PMST5550,135

Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
application markets
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use
the references to Nexperia, as shown below.
Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/,
use http://www.nexperia.com
Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use
salesaddresses@nexperia.com (email)
Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
the version, as shown below:
- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
Should be replaced with:
- © Nexperia B.V. (year). All rights reserved.
If you have any questions related to the data sheet, please contact our nearest sales office via e-mail
or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and
understanding,
Kind regards,
Team Nexperia
DATA SHEET
Product data sheet
Supersedes data of 1997 May 20
1999 Apr 29
DISCRETE SEMICONDUCTORS
PMST5550; PMST5551
NPN high-voltage transistors
db
ook, halfpage
M3D187
1999 Apr 29 2
NXP Semiconductors Product data sheet
NPN high-voltage transistors PMST5550; PMST5551
FEATURES
Low current (max. 300 mA)
High voltage (max. 160 V).
APPLICATIONS
Switching and amplification in high voltage applications
such as telephony.
DESCRIPTION
NPN high-voltage transistor in a SOT323 plastic package.
PNP
complement: PMST5401.
MARKING
Note
1. = - : Made in Hong Kong.
= t : Made in Malaysia.
PINNING
TYPE NUMBER MARKING CODE
(1)
PMST5550 1F
PMST5551 G3
PIN DESCRIPTION
1 base
2 emitter
3 collector
Fig.1 Simplified outline (SOT323) and symbol.
handbook, halfpage
2
3
1
MAM062
3
2
1
Top view
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter
PMST5550 160 V
PMST5551 180 V
V
CEO
collector-emitter voltage open base
PMST5550 140 V
PMST5551 160 V
V
EBO
emitter-base voltage open collector 6 V
I
C
collector current (DC) 300 mA
I
CM
peak collector current 600 mA
I
BM
peak base current 100 mA
P
tot
total power dissipation T
amb
25 °C; note 1 200 mW
T
stg
storage temperature 65 +150 °C
T
j
junction temperature 150 °C
T
amb
operating ambient temperature 65 +150 °C

PMST5550,135

Mfr. #:
Manufacturer:
Nexperia
Description:
Bipolar Transistors - BJT TRANS HV TAPE-11
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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