RCLAMP7512N.TCT

1
www.semtech.com
RClamp7512N
Low Capacitance TVS for
LVDS Interfaces
PROTECTION PRODUCTS - RailClamp
®®
®®
®
Description
Features
Circuit Diagram PIN Configuration
Revision 9/26/2010
RailClamp
®
TVS diode arrays are specifically designed
to protect sensitive components which are connected
to high-speed data and transmission lines from over-
voltage caused by ESD (electrostatic discharge), CDE
(Cable Discharge Events), and EFT (electrical fast
transients).
The unique design incorporates surge rated, low
capacitance steering diodes and a TVS diode in a
single package. During transient conditions, the
steering diodes direct the transient current through the
internal TVS diodes safely to to ground.
The RClamp
®
7512N is constructed using Semtech’s
proprietary EPD process technology. The EPD process
provides low operating voltage (2.5V) with significant
reductions in leakage current and capacitance over
silicon-avalanche diode processes. It features high
surge (Ipp=15A, tp=8/20s) and ESD (+/-25kV per IEC
61000-4-2) capability with low clamping voltage.
The RClamp7512N is in a SLP3525N12 package. It
measures 3.5 x 2.5 x 0.60mm. The leads are finished
with lead-free NiPdAu. The flow through design is
optimized for use on 2-layer pc boards. Each device
will protect up to twelve high-speed lines. The combi-
nation of small size, low capacitance, and high ESD
and surge capability makes them ideal for use in
applications such as next generation color LCD displays
and LVDS interfaces.
Applications
Mechanical Characteristics
TCONN chip Protection
2-Layer PCB
LVDS Interfaces
LCD TV
Transient protection for high-speed data lines to
IEC 61000-4-2 (ESD) ±30kV (air), ±25kV (contact)
IEC 61000-4-4 (EFT) 40A (5/50ns)
IEC 61000-4-5 (Lightning) 15A (8/20s)
Array of surge rated diodes with internal TVS Diode
Flow-Through routing optimized for 2-layer pcb
Small package saves board space
Protects up to twelve I/O lines
Low capacitance (<5pF) for high-speed interfaces
Low leakage current and clamping voltage
Low operating voltage: 2.5V
Solid-state silicon-avalanche technology
SLP3525N12 package
Pb-Free, Halogen Free, RoHS/WEEE Compliant
Nominal Dimensions: 3.5 x 2.5 x 0.60mm
Lead Finish: NiPdAu
Molding compound flammability rating: UL 94V-0
Marking : Marking code + Date code
Packaging : Tape and Reel
Pin Assignments (Top View)Circuit Diagram (12 Total Protection Circuits)
123 4
GND
12
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
I/O 8
I/O 9
I/O 10
I/O 11
I/O 12
GND
GND
2© 2010 Semtech Corp.
www.semtech.com
PROTECTION PRODUCTS
RClamp7512N
Absolute Maximum Rating
Electrical Characteristics (T=25
o
C)
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PP
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DSE
03-/+
52-/+
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J
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GTS
051+ot55-C°
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MWR
5.2V
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TP
I
TP
A2=
DNGotO/IynA
7.2V
egatloVkcaB-panSV
BS
I
BS
Am05=
DNGotO/IynA
0.2V
tnerruCegakaeLesreveRI
R
V
MWR
C°52=T,V5.2=
DNGotO/IynA
5.0A
egatloVgnipmalCV
C
I
PP
t,A1=
p
s02/8=
DNGotO/IynA
8.4V
egatloVgnipmalCV
C
I
PP
t,A01=
p
s02/8=
DNGotO/IynA
7.7V
egatloVgnipmalCV
C
I
PP
t,A51=
p
s02/8=
DNGotO/IynA
0.9V
egatloVdrawroFV
F
I
PP
t,A01=
p
s02/8=
O/IynAotDNG
5.3V
egatloVdrawroFV
F
I
PP
t,A51=
p
s02/8=
O/IynAotDNG
8.4V
ecnaticapaCnoitcnuJC
j
dnuorGdnasnipO/IneewteB
V
R
zHM1=f,V5.2-V0=
5Fp
snipO/IneewteB
V
R
zHM1=f,V5.2-V0=
0.2Fp
Note: 1) Any I/O to GND
3© 2010 Semtech Corp.
www.semtech.com
PROTECTION PRODUCTS
RClamp7512N
Typical Characteristics
Non-Repetitive Peak Pulse Power vs. Pulse Time Power Derating Curve
0
10
20
30
40
50
60
70
80
90
100
110
0255075100125150
Ambient Temperature - T
A
(
o
C)
% of Rated Power or I
PP
Surge Current Output Waveform
(tp = 8/20us)
Normalized Capacitance vs. Reverse Voltage
(Any I/O to GND)
Clamping Voltage vs. Peak Pulse Current
Any I/O to GND (tp = 8/20us)
Froward Voltage vs. Peak Pulse Current
GND to any I/O (tp = 8/20us)
0
10
20
30
40
50
60
70
80
90
100
110
0 5 10 15 20 25 30
Time (μs)
Percent of I
PP
e
-t
td = I
PP
/2
Waveform
Parameters:
tr = 8μs
td = 20μs
0.5
0.6
0.7
0.8
0.9
1
1.1
00.511.522.5
Reverse Voltage - VR(V)
Cj(VR) / Cj(VR=0V)
f = 1 MHz
0
2
4
6
8
10
12
0 5 10 15 20
Peak Pulse Current - I
PP
(A)
Clamping Voltage -V
C
(V)
Waveform
Parameters:
tr = 8μs
td = 20μs
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
0 5 10 15
Peak Pulse Current (A)
Forward Voltage (V)
Waveform
Parameters:
tr = 8μs
td = 20μs
0.01
0.1
1
10
0.1 1 10 100
Pulse Duration - tp (us)
Peak Pulse Power - P
PP
(kW)

RCLAMP7512N.TCT

Mfr. #:
Manufacturer:
Semtech
Description:
TVS Diodes / ESD Suppressors 12L STR DIODE W/VCC AND GND
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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