BLF147,112 Datasheet BLF147,112 | P7-P9

NXP Semiconductors Product speciﬁcation

VHF power MOS transistor BLF147

Fig.9 Power gain as a function of load power;

typical values.

Class-AB operation; V

= 28 V; I

= 1 A;

= 9.8 Ω; f

= 28.000 MHz; f

= 28.001 MHz.

handbook, halfpage

0 200

MGP053

100

(W) PEP

(dB)

Fig.10 Efficiency as a function of load power;

typical values.

Class-AB operation; V

= 28 V; I

=1A;

= 9.8 Ω; f

= 28.000 MHz; f

= 28.001 MHz.

handbook, halfpage

100 200

MGP054

(%)

(W) PEP

Fig.11 Third order intermodulation distortion as a

function of load power; typical values.

Class-AB operation; V

= 28 V; I

=1A;

= 9.8 Ω; f

= 28.000 MHz; f

= 28.001 MHz.

handbook, halfpage

−20

−30

−40

−50

−60

100 200

MGP055

(dB)

(W) PEP

Fig.12 Fifth order intermodulation distortion as a

function of load power; typical values.

Class-AB operation; V

= 28 V; I

=1A;

= 9.8 Ω; f

= 28.000 MHz; f

= 28.001 MHz.

handbook, halfpage

−20

−30

−40

−60

−50

100 200

MGP056

(dB)

(W) PEP

Rev. 06 - 5 December 2006

7 of 15

NXP Semiconductors Product speciﬁcation

VHF power MOS transistor BLF147

Fig.13 Test circuit for class-AB operation.

f = 28 MHz.

handbook, full pagewidth

MGP057

input

50 Ω

D.U.T.

R2R1

C13

C11

C10

C12

C15

C14

L6L5

output

50 Ω

Rev. 06 - 5 December 2006

8 of 15

NXP Semiconductors Product speciﬁcation

VHF power MOS transistor BLF147

List of components (see Fig 13).

Notes

1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality.

2. The striplines are on a double copper-clad printed circuit board, with PTFE fibre-glass dielectric (ε

= 2.2),

thickness 1.6 mm.

COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO.

C1, C3, C13, C14 ﬁlm dielectric trimmer 7 to 100 pF 2222 809 07015

C2, C8, C9 multilayer ceramic chip capacitor;

note 1

75 pF

C4, C5 multilayer ceramic chip capacitor 100 nF 2222 852 47104

C6 multilayer ceramic chip capacitors in

parallel

3 × 100 nF 2222 852 47104

C7 electrolytic capacitor 2.2 µF, 63 V

C10 multilayer ceramic chip capacitor;

note 1

100 pF

C11, C12 multilayer ceramic chip capacitor;

note 1

150 pF

C15 multilayer ceramic chip capacitor;

note 1

240 pF

L1 6 turns enamelled 0.7 mm copper

wire

145 nH length 5 mm;

int. dia. 6 mm;

leads 2 × 5mm

L2, L3 stripline; note 2 41.1 Ω length 13 × 6mm

L4 4 turns enamelled 1.5 mm copper

wire

148 nH length 8 mm;

int. dia. 10 mm;

leads 2 × 5mm

L5, L6 grade 3B Ferroxcube wideband HF

choke

4312 020 36642

L7 3 turns enamelled 2.2 mm copper

wire

79 nH length 8 mm;

int. dia. 8 mm;

leads 2 × 5mm

R1, R2 1 W metal ﬁlm resistor 19.6 Ω 2322 153 51969

R3 0.4 W metal ﬁlm resistor 10 kΩ 2322 151 71003

R4 0.4 W metal ﬁlm resistor 1 MΩ 2322 151 71005

R5 1 W metal ﬁlm resistor 10 Ω 2322 153 51009

Rev. 06 - 5 December 2006

9 of 15

P1-P3 P4-P6 P7-P9 P10-P12 P13-P15

BLF147,112

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