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M74HCT132TTR

P1-P3P4-P6P7-P8
1/8July 2001
■ HIGH SPEED:
t
PD
= 19ns (TYP.) at V
CC
= 4.5V
■ LOW POWER DISSIPATION:
I
CC
= 1µA(MAX.) at T
A
=25°C
■ HIGH NOISE IMMUNITY :
V
H
= 0.7V (TYP) at V
cc
= 4.5V
■ BALANCED PROPAGATION DELAYS:
t
PLH
≅ t
PHL
■ SYMMETRICAL OUTPUT IMPEDANCE:
|I
OH
| = I
OL
= 4mA (MIN)
■ PIN AND FUNCTION COMPATIBLE WITH
74 SERIES 132
DESCRIPTION
The M74HCT132 is an high speed CMOS QUAD
2-INPUT SCHMITT NAND GATE fabricated with
silicon gate C
2
MOS technology.
Pin configuration and function are the same as
those of the M74HCT00. The hysteresis
characteristics (around 20% V
cc
) of all inputs allow
slowly changing input signals to be transformed
into sharply defined jitter-free output signals.
The M74HCT132 is designed to directly interface
HSC
2
MOS systems with TTL and NMOS
components.
All inputs are equipped with protection circuits
against static discharge and transient excess
voltage.
M74HCT132
QUAD 2-INPUT SCHMITT NAND GATE
PIN CONNECTION AND IEC LOGIC SYMBOLS
ORDER CODES
PACKAGE TUBE T & R
DIP M74HCT132B1R
SOP M74HCT132M1R M74HCT132RM13TR
TSSOP M74HCT132TTR
TSSOPDIP SOP
Obsolete Product(s) - Obsolete Product(s)
M74HCT132
2/8
INPUT AND OUTPUT EQUIVALENT CIRCUIT PIN DESCRIPTION
TRUTH TABLE
ABSOLUTE MAXIMUM RATINGS
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied
(*) 500mW at 65
°C; derate to 300mW by 10mW/°C from 65°C to 85°C
RECOMMENDED OPERATING CONDITIONS
PIN No SYMBOL NAME AND FUNCTION
1, 4, 9, 12 1A to 4A Data Inputs
2, 5, 10, 13 1B to 4B Data Inputs
3, 6, 8, 11 1Y to 4Y Data Outputs
7 GND Ground (0V)
14
V
CC
Positive Supply Voltage
ABY
LLH
LHH
HLH
HHL
Symbol Parameter Value Unit
V
CC
Supply Voltage
-0.5 to +7 V
V
I
DC Input Voltage -0.5 to V
CC
+ 0.5
V
V
O
DC Output Voltage -0.5 to V
CC
+ 0.5
V
I
IK
DC Input Diode Current
± 20 mA
I
OK
DC Output Diode Current
± 20 mA
I
O
DC Output Current
± 25 mA
I
CC
or I
GND
DC V
CC
or Ground Current
± 50 mA
P
D
Power Dissipation
500(*) mW
T
stg
Storage Temperature
-65 to +150 °C
T
L
Lead Temperature (10 sec)
300 °C
Symbol Parameter Value Unit
V
CC
Supply Voltage
4.5 to 5.5 V
V
I
Input Voltage 0 to V
CC
V
V
O
Output Voltage 0 to V
CC
V
T
op
Operating Temperature
-55 to 125 °C
Obsolete Product(s) - Obsolete Product(s)
M74HCT132
3/8
DC SPECIFICATIONS
AC ELECTRICAL CHARACTERISTICS (C
L
= 50 pF, Input t
r
= t
f
= 6ns)
CAPACITIVE CHARACTERISTICS
1) C
PD
is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. I
CC(opr)
= C
PD
x V
CC
x f
IN
+ I
CC
Symbol Parameter
Test Condition Value
Unit
V
CC
(V)
T
A
= 25°C
-40 to 85°C -55 to 125°C
Min. Typ. Max. Min. Max. Min. Max.
V
P
High Level
Threshold Voltage
4.5 1.2 1.55 1.9 1.2 1.9 1.2 1.9
V
5.5 1.4 1.75 2.1 1.4 2.1 1.4 2.1
V
N
Low Level
Threshold Voltage
4.5 0.5 0.85 1.2 0.5 1.2 0.5 1.2
V
5.5 0.6 1.1 1.4 0.6 1.4 0.6 1.4
V
H
Hysteresis Voltage 4.5 0.4 0.7 1.4 0.4 1.4 0.4 1.4
V
5.5 0.4 0.7 1.5 0.4 1.5 0.4 1.5
V
OH
High Level Output
Voltage
4.5
I
O
=-20 µA
4.4 4.5 4.4 4.4
V
I
O
=-4.0 mA
4.18 4.31 4.13 4.10
V
OL
Low Level Output
Voltage
4.5
I
O
=20 µA
0.0 0.1 0.1 0.1
V
I
O
=4.0 mA
0.17 0.26 0.33 0.40
I
I
Input Leakage
Current
5.5
V
I
= V
CC
or GND
± 0.1 ± 1 ± 1 µA
I
CC
Quiescent Supply
Current
5.5
V
I
= V
CC
or GND
11020µA
Symbol Parameter
Test Condition Value
Unit
V
CC
(V)
T
A
= 25°C
-40 to 85°C -55 to 125°C
Min. Typ. Max. Min. Max. Min. Max.
t
TLH
t
THL
Output Transition
Time
4.5 8151922ns
t
PLH
t
PHL
Propagation Delay
Time
4.5 19 30 38 45 ns
Symbol Parameter
Test Condition Value
Unit
V
CC
(V)
T
A
= 25°C
-40 to 85°C -55 to 125°C
Min. Typ. Max. Min. Max. Min. Max.
C
IN
Input Capacitance
5101010pF
C
PD
Power Dissipation
Capacitance (note
1)
45 pF
Obsolete Product(s) - Obsolete Product(s)
P1-P3P4-P6P7-P8

M74HCT132TTR

Mfr. #:
Buy M74HCT132TTR
Manufacturer:
STMicroelectronics
Description:
Logic Gates Quad 2-In Schmt NAND
Lifecycle:
New from this manufacturer.
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