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VSSAF5L45HM3_A/H

P1-P3P4-P5
VSSAF5L45
www.vishay.com
Vishay General Semiconductor
Revision: 24-Feb-17
1
Document Number: 89934
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Surface Mount Trench MOS Barrier Schottky Rectifier
FEATURES
• Very low profile - typical height of 0.95 mm
• Ideal for automated placement
• Trench MOS Schottky technology
• Low power losses, high efficiency
• Low forward voltage drop
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• AEC-Q101 qualified available
- Automotive ordering code; base P/NHM3
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in low voltage, high frequency inverters,
freewheeling, DC/DC converters, and polarity protection
applications.
MECHANICAL DATA
Case: DO-221AC (SlimSMA)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Base P/NHM3 - halogen-free, RoHS-compliant, and
AEC-Q101 qualified
Base P/NHM3_X - halogen-free, RoHS-compliant, and
AEC-Q101 qualified
(“_X” denotes revision code e.g. A, B,.....)
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix
meets JESD 201 class 2 whisker test
Polarity: color band denotes cathode end
Notes
(1)
Mounted on 10 mm x 10 mm pad areas, 2 oz. FR4 PCB
(2)
Free air, mounted on recommended copper pad area
PRIMARY CHARACTERISTICS
Package DO-221AC (SlimSMA)
I
F(AV)
5.0 A
V
RRM
45 V
I
FSM
100 A
V
F
at I
F
= 5.0 A 0.39 V
T
J
max. 150 °C
Diode variations Single die
DO-221AC
TMBS
®
SlimSMA
Top View
Bottom View
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL VSSAF5L45 UNIT
Device marking code 5L45
Maximum repetitive peak reverse voltage V
RRM
45 V
Maximum DC forward current
I
F
(1)
5.0
A
I
F
(2)
3.0
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
I
FSM
100 A
Operating junction and storage temperature range T
J
, T
STG
-40 to +150 °C
VSSAF5L45
www.vishay.com
Vishay General Semiconductor
Revision: 24-Feb-17
2
Document Number: 89934
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
(1)
Pulse test: 300 µs pulse width, 1 % duty cycle
(2)
Pulse test: pulse width 40 ms
Notes
(1)
Free air, mounted on recommended PCB, 2 oz. pad area; thermal resistance R
JA
- junction to ambient
(2)
Mounted on 10 mm x 10 mm pad areas, 2 oz. FR4 PCB; R
JM
- junction to mount
Note
(1)
AEC-Q101 qualified
RATINGS AND CHARACTERISTICS CURVES (T
A
= 25 °C unless otherwise specified)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 2 - Average Power Loss Characteristics
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT
Instantaneous forward voltage
I
F
= 2.5 A
T
A
= 25 °C
V
F
(1)
0.42 -
V
I
F
= 5.0 A 0.47 0.56
I
F
= 2.5 A
T
A
= 125 °C
0.31 -
I
F
= 5.0 A 0.39 0.47
Reverse current V
R
= 45 V
T
A
= 25 °C
I
R
(2)
- 650 µA
T
A
= 125 °C 8 45 mA
Typical junction capacitance 4.0 V, 1 MHz C
J
740 - pF
THERMAL CHARACTERISTICS (T
A
= 25 °C unless otherwise specified)
PARAMETER SYMBOL VSSAF5L45 UNIT
Typical thermal resistance
R
JA
(1)
115
°C/W
R
JM
(2)
12
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
VSSAF5L45-M3/6A 0.032 6A 3500 7" diameter plastic tape and reel
VSSAF5L45-M3/6B 0.032 6B 14 000 13" diameter plastic tape and reel
VSSAF5L45HM3/6A
(1)
0.032 6A 3500 7" diameter plastic tape and reel
VSSAF5L45HM3/6B
(1)
0.032 6B 14 000 13" diameter plastic tape and reel
VSSAF5L45HM3_A/H
(1)
0.032 H 3500 7" diameter plastic tape and reel
VSSAF5L45HM3_A/I
(1)
0.032 I 14 000 13" diameter plastic tape and reel
5
4
3
2
1
0
0 25 50 75 100 125 150
Mount Temperature (°C)
DC Forward Current (A)
6
T
M
measured
at the cathode band terminal
T
M
= 125 °C
T
A
= 25 °C
0
0.4
0.8
1.2
1.6
2
2.4
2.8
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6
Average Forward Current (A)
Average Power Loss (W)
D = 0.1
D = 0.2
D = 0.3
D = 0.5
D = 1.0
D = t
p
/T t
p
T
D = 0.8
VSSAF5L45
www.vishay.com
Vishay General Semiconductor
Revision: 24-Feb-17
3
Document Number: 89934
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 4 - Typical Reverse Leakage Characteristics
Fig. 5 - Typical Junction Capacitance
Fig. 6 - Typical Transient Thermal Impedance
Fig. 7 - Thermal Resistance Junction to Ambient vs.
Copper Pad Areas
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
100
10
1
0.1
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
T
A
= 150 °C
T
A
= 125 °C
T
A
= 25 °C
T
A
= 100 °C
10 20 30 40 50 60 70 80 90 100
100
10
1
0.1
0.01
0.001
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Current (mA)
T
A
= 150 °C
T
A
= 125 °C
T
A
= 25 °C
T
A
= 100 °C
0.1 1 10 100
10 000
1000
100
Reverse Voltage (V)
Junction Capacitance (pF)
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mV
p-p
0.01 0.1 1 10 100
1000
100
10
1
t - Pulse Duration (s)
Transient Thermal Impedance (°C/W)
Junction to Ambient
Copper Pad Areas (cm
2
)
Thermal Resistance (°C/W)
0
20
40
60
80
100
120
140
0.0 2.0 4.0 6.0 8.0 10.0
Scu (cm)
Epoxy printed
circiut board FR4
copper
thickness = 70 µm
P1-P3P4-P5

VSSAF5L45HM3_A/H

Mfr. #:
Buy VSSAF5L45HM3_A/H
Manufacturer:
Vishay Semiconductors
Description:
Schottky Diodes & Rectifiers TMBS 45V Vrrm eSMP AEC-Q101 Qualified
Lifecycle:
New from this manufacturer.
Delivery:
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