IXZR18N50 & IXZR18N50A/B
Z-MOS RF Power MOSFET
Characteristic Values
(
T
J
= 25°C unless otherwise specified
)
Symbol Test Conditions min. typ. max.
I
S
V
GS
= 0 V
19
Α
I
SM
Repetitive; pulse width limited by T
JM
114 A
V
SD
I
F
=
I
s,
V
GS
=0 V, Pulse test, t ≤ 300µs, duty cycle
≤2%
1.5 V
T
rr
200 ns
Source-Drain Diode
IXYS RF reserves the right to change limits, test conditions and dimensions.
IXYS RF MOSFETS are covered by one or more of the following U.S. patents:
4,835,592 4,860,072 4,881,106 4,891,686 4,931,844 5,017,508
5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715
5,381,025 5,640,045 6,404,065 6,583,505 6,710,463 6,727,585
6,731,002
CAUTION: Operation at or above the Maximum Ratings values may impact device reliability or cause permanent damage to the device.
Information in this document is believed to be accurate and reliable. IXYSRF reserves the right to make changes to information pub-
lished in this document at any time and without notice.
Symbol Test Conditions Characteristic Values
(
T
J
= 25°C unless otherwise specified
)
min. typ. max.
R
G
1
Ω
C
iss
2020 pF
C
oss
V
GS
= 0 V, V
DS
= 0.8 V
DSS(max)
,
f = 1 MHz
172 pF
C
rss
21 pF
T
d(on)
4 ns
T
on
V
GS
= 15 V, V
DS
= 0.8 V
DSS
I
D
= 0.5 I
DM
R
G
= 1 Ω (External)
4 ns
T
d(off)
4 ns
T
off
5 ns
Q
g(on)
42 nC
Q
gs
V
GS
= 10 V, V
DS
= 0.5 V
DSS
I
D
= 0.5 I
D25
I
G
= 3mA
14 nC
Q
gd
21 nC
C
stray
Back Metal to any Pin
33 pF