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NSVDTC143ZM3T5G

P1-P3P4-P6P7-P9P10-P12
MUN2233, MMUN2233L, MUN5233, DTC143ZE, DTC143ZM3, NSBC143ZF3
www.onsemi.com
4
Table 2. THERMAL CHARACTERISTICS
Characteristic UnitMaxSymbol
THERMAL CHARACTERISTICS (SOT−1123) (NSBC143ZF3)
Total Device Dissipation
T
A
= 25°C (Note 3)
(Note 4)
Derate above 25°C (Note 3)
(Note 4)
P
D
254
297
2.0
2.4
mW
mW/°C
Thermal Resistance, (Note 3)
Junction to Ambient (Note 4)
R
q
JA
493
421
°C/W
Thermal Resistance, Junction to Lead (Note 3)
R
q
JL
193 °C/W
Junction and Storage Temperature Range T
J
, T
stg
−55 to +150 °C
1. FR−4 @ Minimum Pad.
2. FR−4 @ 1.0 x 1.0 Inch Pad.
3. FR*4 @ 100 mm
2
, 1 oz. copper traces, still air.
4. FR*4 @ 500 mm
2
, 1 oz. copper traces, still air.
Table 3. ELECTRICAL CHARACTERISTICS (T
A
= 25°C, unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector−Base Cutoff Current
(V
CB
= 50 V, I
E
= 0)
I
CBO
− − 100
nAdc
Collector−Emitter Cutoff Current
(V
CE
= 50 V, I
B
= 0)
I
CEO
− − 500
nAdc
Emitter−Base Cutoff Current
(V
EB
= 6.0 V, I
C
= 0)
I
EBO
− − 0.18
mAdc
Collector−Base Breakdown Voltage
(I
C
= 10 mA, I
E
= 0)
V
(BR)CBO
50 − −
Vdc
Collector−Emitter Breakdown Voltage (Note 5)
(I
C
= 2.0 mA, I
B
= 0)
V
(BR)CEO
50 − −
Vdc
ON CHARACTERISTICS
DC Current Gain (Note 5)
(I
C
= 5.0 mA, V
CE
= 10 V)
h
FE
80 200 −
Collector *Emitter Saturation Voltage (Note 5)
(I
C
= 10 mA, I
B
= 1.0 mA)
VCE(sat)
− − 0.25
Vdc
Input Voltage (off)
(V
CE
= 5.0 V, I
C
= 100 mA)
V
i(off)
− 0.6 0.5
Vdc
Input Voltage (on)
(V
CE
= 0.3 V, I
C
= 5 mA)
V
i(on)
1.3 0.9 −
Vdc
Output Voltage (on)
(V
CC
= 5.0 V, V
B
= 2.5 V, R
L
= 1.0 kW)
V
OL
− − 0.2
Vdc
Output Voltage (off)
(V
CC
= 5.0 V, V
B
= 0.5 V, R
L
= 1.0 kW)
V
OH
4.9 − −
Vdc
Input Resistor R1 3.3 4.7 6.1
kW
Resistor Ratio R
1
/R
2
0.08 0.1 0.12
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle v 2%.
MUN2233, MMUN2233L, MUN5233, DTC143ZE, DTC143ZM3, NSBC143ZF3
www.onsemi.com
5
TYPICAL CHARACTERISTICS
MUN2233, MMUN2233L, MUN5233, DTC143ZE, DTC143ZM3
−55°C
150°C
Figure 2. V
CE(sat)
versus I
C
Figure 3. DC Current Gain
Figure 4. Output Capacitance Figure 5. Output Current versus Input Voltage
V
in
, INPUT VOLTAGE (V)V
R
, REVERSE BIAS VOLTAGE (V)
Figure 6. Input Voltage versus Output Current
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA) I
C
, COLLECTOR CURRENT (mA)
V
CE(sat)
, COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
h
FE
, DC CURRENT GAIN
50403020100
C
ob
, CAPACITANCE (pF)
I
C
, COLLECTOR CURRENT (mA)
V
in
, INPUT VOLTAGE (V)
f = 10 kHz
I
E
= 0 A
T
A
= 25°C
V
O
= 5 V
V
O
= 0.2 V
I
C
/I
B
= 10
V
CE
= 10 V
25°C
1
0.1
0.01
1 10 100
1000
1 10 100
−55°C
150°C
25°C
3.2
25°C
−55°C
150°C
01 423
100
10
1
0.1
0.01
0.001
25°C
−55°C
150°C
10
1
0.1
50403020100
100
10
2.8
2.4
2
1.6
1.2
0.8
0.4
0
MUN2233, MMUN2233L, MUN5233, DTC143ZE, DTC143ZM3, NSBC143ZF3
www.onsemi.com
6
TYPICAL CHARACTERISTICS
NSBC143ZF3
−55°C
150°C
Figure 7. V
CE(sat)
versus I
C
Figure 8. DC Current Gain
Figure 9. Output Capacitance Figure 10. Output Current versus Input Voltage
V
in
, INPUT VOLTAGE (V)V
R
, REVERSE BIAS VOLTAGE (V)
Figure 11. Input Voltage versus Output Current
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA) I
C
, COLLECTOR CURRENT (mA)
V
CE(sat)
, COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
h
FE
, DC CURRENT GAIN
50403020100
C
ob
, CAPACITANCE (pF)
I
C
, COLLECTOR CURRENT (mA)
V
in
, INPUT VOLTAGE (V)
V
O
= 5 V
V
O
= 0.2 V
I
C
/I
B
= 10
V
CE
= 10 V
25°C
1
0.1
0.01
110 50
1000
1 10 100
−55°C
150°C
25°C
2.4
25°C
−55°C
150°C
01 423
100
10
1
0.1
0.01
0.001
25°C
−55°C
150°C
100
50403020100
403020
100
10
1
0.1
2
1.6
1.2
0.8
0.4
0
10
1
0.1
f = 10 kHz
I
E
= 0 A
T
A
= 25°C
P1-P3P4-P6P7-P9P10-P12

NSVDTC143ZM3T5G

Mfr. #:
Buy NSVDTC143ZM3T5G
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - Pre-Biased BIAS RESISTOR TRANSISTOR
Lifecycle:
New from this manufacturer.
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