NGTB30N60FWG Datasheet NGTB30N60FWG | P1-P3

December, 2012 − Rev. 1

1 Publication Order Number:

NGTB30N60FW/D

NGTB30N60FWG

IGBT

This Insulated Gate Bipolar Transistor (IGBT) features a robust and

cost effective Trench construction, and provides superior performance

in demanding switching applications, offering both low on state

voltage and minimal switching loss.

Features

• Optimized for Very Low V

CEsat

• Low Switching Loss Reduces System Power Dissipation

• Soft Fast Reverse Recovery Diode

• 5 ms Short−Circuit Capability

• These are Pb−Free Devices

Typical Applications

• Power Factor Correction

ABSOLUTE MAXIMUM RATINGS

Rating Symbol Value Unit

Collector−emitter voltage V

CES

600 V

Collector current

@ T

C = 25°C

@ TC = 100°C

I

C

60

30

A

Pulsed collector current, T

pulse

limited by T

Jmax

I

CM

120 A

Diode Forward Current

@ T

C

= 25°C

@ T

C

= 100°C

I

F

60

30

A

Diode Pulsed Current

T

pulse

Limited by T

Jmax

I

FM

120 A

Short−circuit withstand time

V

GE

= 15 V, V

CE

= 300 V,

T

J

≤ +150°C

t

SC

5

ms

Gate−emitter voltage

Transient Gate Emitter Voltage

(t

p

= 5 ms, D < 0.010)

V

GE

$20

$30

V

Power Dissipation

@ T

C = 25°C

@ TC = 100°C

P

D

167

67

W

Operating junction temperature

range

T

J

−55 to +150 °C

Storage temperature range T

stg

−55 to +150 °C

Lead temperature for soldering, 1/8”

from case for 5 seconds

T

SLD

260 °C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

TO−247

CASE 340L

STYLE 4

C

G

30 A, 600 V

V

CEsat

= 1.45 V

E

Device Package Shipping

ORDERING INFORMATION

NGTB30N60FWG TO−247

(Pb−Free)

30 Units / Rail

http://onsemi.com

A = Assembly Location

Y = Year

WW = Work Week

G = Pb−Free Package

MARKING DIAGRAM

30N60F

AYWWG

G

E

C

NGTB30N60FWG

http://onsemi.com

2

THERMAL CHARACTERISTICS

Rating Symbol Value Unit

Thermal resistance junction−to−case, for IGBT

R

q

JC

0.75 °C/W

Thermal resistance junction−to−case, for Diode

R

q

JC

1.06 °C/W

Thermal resistance junction−to−ambient

R

q

JA

40 °C/W

ELECTRICAL CHARACTERISTICS (T

J

= 25°C unless otherwise specified)

Parameter Test Conditions Symbol Min Typ Max Unit

STATIC CHARACTERISTIC

Collector−emitter breakdown voltage,

gate−emitter short−circuited

V

GE

= 0 V, I

C

= 500 mA

V

(BR)CES

600 − − V

Collector−emitter saturation voltage V

GE

= 15 V, I

C

= 30 A

V

GE

= 15 V, I

C

= 30 A, T

J

= 150°C

V

CEsat

1.25

−

1.45

1.75

1.70

−

V

Gate−emitter threshold voltage

V

GE

= V

CE

, I

C

= 200 mA

V

GE(th)

4.5 5.5 6.5 V

Collector−emitter cut−off current, gate−

emitter short−circuited

V

GE

= 0 V, V

CE

= 600 V

V

GE

= 0 V, V

CE

= 600 V, T

J

=

150°C

I

CES

−

0.2

2

mA

Gate leakage current, collector−emitter

short−circuited

V

GE

= 20 V , V

CE

= 0 V I

GES

− − 100 nA

DYNAMIC CHARACTERISTIC

Input capacitance

V

CE

= 20 V, V

GE

= 0 V, f = 1 MHz

C

ies

− 4100 −

pF

Output capacitance C

oes

− 150 −

Reverse transfer capacitance C

res

− 95 −

Gate charge total

V

CE

= 480 V, I

C

= 30 A, V

GE

= 15 V

Q

g

170

nC

Gate to emitter charge Q

ge

34

Gate to collector charge

Q

gc

83

SWITCHING CHARACTERISTIC, INDUCTIVE LOAD

Turn−on delay time

T

J

= 25°C

V

CC

= 400 V, I

C

= 30 A

R

g

= 10 W

V

GE

= 0 V/ 15 V

t

d(on)

81

ns

Rise time t

r

31

Turn−off delay time t

d(off)

190

Fall time t

f

110

Turn−on switching loss E

on

0.65

mJ

Turn−off switching loss E

off

0.65

Total switching loss E

ts

1.30

Turn−on delay time

T

J

= 150°C

V

CC

= 400 V, I

C

= 30 A

R

g

= 10 W

V

GE

= 0 V/ 15 V

t

d(on)

80

ns

Rise time t

r

32

Turn−off delay time t

d(off)

200

Fall time t

f

230

Turn−on switching loss E

on

0.80

mJ

Turn−off switching loss E

off

1.1

Total switching loss E

ts

1.90

NGTB30N60FWG

http://onsemi.com

3

ELECTRICAL CHARACTERISTICS (T

J

= 25°C unless otherwise specified)

Parameter UnitMaxTypMinSymbolTest Conditions

DIODE CHARACTERISTIC

Forward voltage

V

GE

= 0 V, I

F

= 30 A

V

GE

= 0 V, I

F

= 30 A, T

J

= 150°C

V

F

1.45 1.90 2.35 V

Reverse recovery time

T

J

= 25°C

I

F

= 30 A, V

R

= 200 V

di

F

/dt = 200 A/ms

t

rr

72 ns

Reverse recovery charge Q

rr

15

mC

Reverse recovery current I

rrm

6 A

NGTB30N60FWG

NGTB30N60FWG

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