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TT8M1TR

P1-P3P4-P6P7-P9
www.rohm.com
©2010 ROHM Co., Ltd. All rights reserved.
1.5V Drive Nch + Pch MOSFET
TT8M1
Structure Dimensions (Unit : mm)
Silicon N-channel MOSFET/
Silicon P-channel MOSFET
Features
1) Low on-resistance.
2) High power package (TSST8).
3) Low voltage drive (1.5V drive).
Application
Switching
Packaging specifications
Inner circuit
Package Taping
Code TR
Basic ordering unit (pieces) 3000
TT8M1
Absolute maximum ratings (Ta = 25C)
Tr1 : N-ch Tr2 : P-ch
Drain-source voltage V
DSS
20 20 V
Gate-source voltage V
GSS
10 10 V
Continuous I
D
2.5 2.5 A
Pulsed I
DP
10 10 A
Continuous I
s
0.8
0.8 A
Pulsed I
sp
10 10 A
W / TOTAL
W / ELEMENT
Channel temperature Tch C
Range of storage temperature Tstg C
*1 Pw10s, Duty cycle1%
*2 Mounted on a ceramic board.
Symbol
Type
Source current
(Body Diode)
Drain current
Parameter Unit
Limits
1
150
Power dissipation
P
D
1.25
55 to +150
(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Source
(4) Tr2 Gate
(5) Tr2 Drain
(6) Tr2 Drain
(7) Tr1 Drain
(8) Tr1 Drain
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
*1
*2
*1
Abbreviated symbol :M01
TSST8
(1) (2) (3) (4)
(8) (7) (6) (5)
1/8
2010.08 - Rev.A
Data Sheet
www.rohm.com
©2010 ROHM Co., Ltd. All rights reserved.
TT8M1
Electrical characteristics (Ta = 25C)
<Tr1(Nch)>
Symbol Min. Typ. Max. Unit
Gate-source leakage I
GSS
--10 AV
GS
=10V, V
DS
=0V
Drain-source breakdown voltage V
(BR)DSS
20 - - V I
D
=1mA, V
GS
=0V
Zero gate voltage drain current I
DSS
--1AV
DS
=20V, V
GS
=0V
Gate threshold voltage V
GS (th)
0.3 - 1.0 V V
DS
=10V, I
D
=1mA
-5272 I
D
=2.5A, V
GS
=4.5V
-6590 I
D
=2.5A, V
GS
=2.5V
85 120 I
D
=1.2A, V
GS
=1.8V
100 140 I
D
=0.5A, V
GS
=1.5V
Forward transfer admittance l Y
fs
l 2.7 - - S V
DS
=10V, I
D
=2.5A
Input capacitance C
iss
- 260 - pF V
DS
=10V
Output capacitance C
oss
- 65 - pF V
GS
=0V
Reverse transfer capacitance C
rss
- 35 - pF f=1MHz
Turn-on delay time t
d(on)
-9-nsI
D
=1.2A, V
DD
10V
Rise time t
r
- 17 - ns V
GS
=4.5V
Turn-off delay time t
d(off)
- 28 - ns R
L
8.3
Fall time t
f
- 17 - ns R
G
=10
Total gate charge Q
g
- 3.6 - nC I
D
=2.5A, V
DD
10V
Gate-source charge Q
gs
- 0.7 - nC V
GS
=4.5V,R
L
4
Gate-drain charge Q
gd
- 0.6 - nC R
G
=10
*Pulsed
Body diode characteristics (Source-Drain) (Ta = 25C)
Symbol Min. Typ. Max. Unit
Forward Voltage V
SD
- - 1.2 V I
s
=2.5A, V
GS
=0V
*Pulsed
Parameter Conditions
ConditionsParameter
Static drain-source on-state
resistance
R
DS (on)
m
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
2/8
2010.08 - Rev.A
Data Sheet
www.rohm.com
©2010 ROHM Co., Ltd. All rights reserved.
TT8M1
Electrical characteristics (Ta = 25C)
<Tr2(Pch)>
Symbol Min. Typ. Max. Unit
Gate-source leakage I
GSS
--10 AV
GS
=10V, V
DS
=0V
Drain-source breakdown voltage V
(BR)DSS
20 - - V I
D
=1mA, V
GS
=0V
Zero gate voltage drain current I
DSS
- 1 AV
DS
=20V, V
GS
=0V
Gate threshold voltage V
GS (th)
0.3 - 1.0 V V
DS
=10V, I
D
=1mA
-4968 I
D
=2.5A, V
GS
=4.5V
-6895 I
D
=1.2A, V
GS
=2.5V
100 150 I
D
=1.2A, V
GS
=1.8V
- 140 280 I
D
=0.5A, V
GS
=1.5V
Forward transfer admittance l Y
fs
l 2.5 - - S V
DS
=10V, I
D
=2.5A
Input capacitance C
iss
- 1270 - pF V
DS
=10V
Output capacitance C
oss
- 100 - pF V
GS
=0V
Reverse transfer capacitance C
rss
- 90 - pF f=1MHz
Turn-on delay time t
d(on)
-9-nsI
D
=1.2A, V
DD
10V
Rise time t
r
- 30 - ns V
GS
=4.5V
Turn-off delay time t
d(off)
- 120 - ns R
L
8.3
Fall time t
f
- 85 - ns R
G
=10
Total gate charge Q
g
- 12 - nC I
D
=2.5A, V
DD
10V
Gate-source charge Q
gs
- 2.5 - nC V
GS
=4.5V,R
L
4
Gate-drain charge Q
gd
-2-nCR
G
=10
*Pulsed
Body diode characteristics (Source-Drain) (Ta = 25C)
Symbol Min. Typ. Max. Unit
Forward Voltage V
SD
--1.2 V I
s
=2.5A, V
GS
=0V
*Pulsed
Parameter Conditions
Conditions
m
Static drain-source on-state
resistance
R
DS (on)
Parameter
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
3/8
2010.08 - Rev.A
P1-P3P4-P6P7-P9

TT8M1TR

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MOSFET 1.5V Drive Nch+Pch MOSFET
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