OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

NSD914F3T5G

P1-P3P4-P4
© Semiconductor Components Industries, LLC, 2009
January, 2009 − Rev. 0
1 Publication Order Number:
NSD914F3/D
NSD914F3T5G
High-Speed Switching
Diode
The NSD914F3T5G device is a spin−off of our popular SOT−23
three−leaded device. It is designed for high speed switching
applications and is housed in the SOT−1123 surface mount package.
This device is ideal for low−power surface mount applications where
board space is at a premium.
Features
• Reduces Board Space
• This is a Halide−Free Device
• This is a Pb−Free Device
MAXIMUM RATINGS
Rating Symbol Value Unit
Reverse Voltage V
R
100 Vdc
Forward Current I
F
200 mAdc
Peak Forward Surge Current I
FM(surge)
500 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation, T
A
= 25°C
Derate above 25°C
P
D
(Note 1)
290
2.3
mW
mW/°C
Thermal Resistance,
Junction−to−Ambient
R
JA
(Note 1)
432 °C/W
Total Device Dissipation, T
A
= 25°C
Derate above 25°C
P
D
(Note 2)
347
2.8
mW
mW/°C
Thermal Resistance,
Junction−to−Ambient
R
JA
(Note 2)
360 °C/W
Thermal Resistance,
Junction−to−Lead 3
R
JL
(Note 2)
143 °C/W
Junction and Storage Temperature Range T
J
, T
stg
−55 to
+150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. 100 mm
2
1 oz, copper traces.
2. 500 mm
2
1 oz, copper traces.
SOT−1123
CASE 524AA
STYLE 2
1
NSD914F3T5G
ORDERING INFORMATION
http://onsemi.com
MARKING DIAGRAM
Device Package Shipping
†
NSD914F3T5G SOT−1123
(Pb−Free)
8000/Tape & Reel
R = Device Code
M = Date Code
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
2
3
1
R M
1
ANODE
3
CATHODE
NSD914F3T5G
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage
(I
R
= 100 Adc)
V
(BR)
100 − − Vdc
Reverse Voltage Leakage Current
(V
R
= 20 Vdc)
(V
R
= 75 Vdc)
I
R
−
−
−
−
25
5.0
nAdc
Adc
Diode Capacitance
(V
R
= 0, f = 1.0 MHz)
C
T
− − 4.0 pF
Forward Voltage
(I
F
= 10 mAdc)
V
F
− − 1.0 Vdc
Reverse Recovery Time
(I
F
= I
R
= 10 mAdc) (Figure 1)
t
rr
− − 4.0 ns
1. FR−5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
NSD914F3T5G
http://onsemi.com
3
Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (I
F
) of 10 mA.
Notes: 2. Input pulse is adjusted so I
R(peak)
is equal to 10 mA.
Notes: 3. t
p
» t
rr
+10 V
2.0 k
820
0.1 F
DUT
V
R
100 H
0.1 F
50 OUTPUT
PULSE
GENERATOR
50 INPUT
SAMPLING
OSCILLOSCOPE
t
r
t
p
t
10%
90%
I
F
I
R
t
rr
t
i
R(REC)
= 1.0 mA
OUTPUT PULSE
(I
F
= I
R
= 10 mA; MEASURED
at i
R(REC)
= 1.0 mA)
I
F
INPUT SIGNAL
Figure 1. Recovery Time Equivalent Test Circuit
Figure 2. Forward Voltage
V
F
, FORWARD VOLTAGE (VOLTS)
1.0
10
100
0.1
Figure 3. Leakage Current
V
R
, REVERSE VOLTAGE (VOLTS)
10
0
I
1.0
0.1
0.001
0.01
10 20 30 40 50
I
1.0 1.20.2 0.4 0.6 0.8
Figure 4. Capacitance
V
R
, REVERSE VOLTAGE (VOLTS)
0
C
0.68
0.64
0.60
0.52
0.56
2.0 4.0 6.0 8.0
, FORWARD CURRENT (mA)
F
T
A
= 85°C
T
A
= -40°C
T
A
= 25°C
, REVERSE CURRENT ( A)
R
, DIODE CAPACITANCE (pF)
D
T
A
= 25°C
T
A
= 55°C
T
A
= 85°C
T
A
= 150°C
T
A
= 125°C
P1-P3P4-P4

NSD914F3T5G

Mfr. #:
Buy NSD914F3T5G
Manufacturer:
ON Semiconductor
Description:
Diodes - General Purpose, Power, Switching SS SWITCHING DIODE
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet