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SBM1040CT-13-F

P1-P3P4-P4
DS30356 Rev. 6 - 3 1 of 4 SBM1040CT
www.diodes.com
ã Diodes Incorporated
SBM1040CT
10A SURFACE MOUNT DUAL SCHOTTKY BARRIER RECTIFIER
POWERMITE
Ò
3
Features
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
·
Case: POWERMITEâ3 Molded Plastic
·
Plastic Material: UL Flammability
Classification Rating 94V-0
·
Moisture sensitivity: Level 1 per J-STD-020C
·
Terminals: Solderable per MIL-STD-202, Method 208
·
Polarity: See Diagram
·
Marking: See Page 4
·
Weight: 0.072 grams (approx.)
Mechanical Data
B
C
D
E
G
J
H
K
L
M
A
P
12
3
PIN 1
PIN 2
PIN 3, BOTTOMSIDE
HEAT
S
INK
C
Characteristic Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
40 V
RMS Reverse Voltage
V
R(RMS)
28 V
Average Rectified Output Current (Also see Figure 5) per element
total device
I
O
5
10
A
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave Superimposed on Rated Load
Per Package, total device T
C
= 115°C
I
FSM
50 A
Typical Thermal Resistance Junction to Soldering Point Per Element
R
qJS
2.5 °C/W
Operating Temperature Range
T
j
-55 to +150 °C
Storage Temperature Range
T
STG
-55 to +150 °C
·
Guard Ring Die Construction for
Transient Protection
·
Low Power Loss, High Efficiency
·
Low Forward Voltage Drop
·
Very Low Reverse Leakage Current
·
For Use in Low Voltage, High Frequency Inverters, OR’ing,
and Polarity Protection Applications
·
Available in Lead Free Finish/RoHS Compliant Version
(Note 1)
Maximum Ratings
@ T
A
= 25°C unless otherwise specified
POWERMITEâ3
Dim
Min Max
A
4.03 4.09
B
6.40 6.61
C
.864 .914
D
1.83 NOM
E
1.10 1.14
G
.173 .203
H
5.01 5.17
J
4.37 4.43
K
.173 .203
L
.71 .77
M
.36 .46
P
1.73 1.83
All Dimensions in mm
NOT RECOMMENDED
FOR NEW DESIGNS
USE PDS1040CTL
Notes: 1. RoHS revision 13.2.2003. Glass and High Temperature Solder Exemptions Applied, see
EU Directive Annex Notes 5 and 7.
NOT RECOMMENDED
FOR NEW DESIGNS
USE PDS1040CTL
DS30356 Rev. 6 - 3 2 of 4 SBM1040CT
www.diodes.com
Notes: 2. Short duration test pulse used to minimize self-heating effect.
Characteristic Symbol
Min Typ Max Unit
Test Condition
Reverse Breakdown Voltage (Note 2)
V
(BR)R
40 ¾¾V
I
R
= 500mA
Forward Voltage Per Element
V
F
¾
¾
¾
¾
0.45
0.39
0.53
0.50
0.48
0.42
0.575
0.55
V
I
F
= 5A, T
j
= 25°C
I
F
= 5A, T
j
= 100°C
I
F
= 10A, T
j
= 25°C
I
F
= 10A, T
j
= 100°C
Reverse Current (Note 2) Per Element
I
R
¾
¾
¾
¾
35
4
10
2
150
10
80
5
mA
mA
mA
mA
V
R
= 35V, T
j
= 25°C
V
R
= 35V, T
j
= 100°C
V
R
= 17.5V, T
j
= 25°C
V
R
= 17.5V, T
j
= 100°C
Total Capacitance Per Element
C
T
¾ 375 ¾ pF
f = 1.0MHz, V
R
= 4.0V DC
Electrical Characteristics
@ T
A
= 25°C unless otherwise specified
0
100
200
300
400
600
500
I , INSTANTANE
O
US F
O
RWARD CURRENT (A)
F
V , INSTANTANEOUS FORWARD VOLTAGE (mV)
Fig. 1 Typical Forward Characteristics, Per Elemen
t
F
10
1
0.1
0.01
0.001
0.0001
100
T = +125°C
j
T = +100°C
j
T = -25°C
j
T = +25°C
j
0
5
10
15
20
25 30
40
35
I , INSTANTANE
O
US REVERSE CURRENT ( A)
R
m
V , INSTANTANEOUS REVERSE VOLTAGE (V)
Fig. 2 Typical Reverse Characteristics, Per Elemen
t
R
10
1
0.1
0.01
0.001
100
T = +125°C
j
T = +100°C
j
T = +25°C
j
100
1000
10
,
000
015
10
25
30
35
20
40
C , TOTAL CAPACITANCE (pF)
T
V , REVERSE VOLTAGE (V)
Fig. 4 Typical Capacitance
vs. Reverse Volta
g
e, Per Element
R
5
f=1MHz
0
10
20
30
40
50
1 10 100
I , PEAK F
O
RWARD SURGE CURRENT (A)
FSM
NUMBER OF CYCLES AT 60 Hz
Fig. 3 Max Non-Repetitive Peak Fwd Surge Current
Single Half-Sine-Wave
T = 115°C
Total Device
C
DS30356 Rev. 6 - 3 3 of 4 SBM1040CT
www.diodes.com
Notes: 3. T
A
=T
SOLDERING POINT
,R
qJS
= 2.5°C/W, R
qSA
= 0°C/W.
4. Device mounted on GETEK substrate, 2”x2”, 2 oz. copper, double-sided, cathode pad dimensions 0.75” x 1.0”, anode pad
dimensions 0.25” x 1.0”. R
qJA
in range of 25-30°C/W.
5. Device mounted on FR-4 substrate, 2”x2”, 2 oz. copper, single-sided, pad layout as per Diodes Inc. suggested pad layout
document AP02001 which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. R
qJA
in range of
95-100°C/W.
6. Maximum power dissipation when the device is mounted in accordance to the conditions described in Note 4.
7. Maximum power dissipation when the device is mounted in accordance to the conditions described in Note 3.
8. R
qJA
= 10-15°C/W when mounted on 2"x2", single-sided, ceramic board with cathode pad dimensions 0.75"x1.0", anode pad
dimensions 0.25"x1.0".
9. R
qJA
= 20-25°C/W when mounted on 2"x2", single-sided, FR-4 board with cathode pad dimensions 0.5"x1.0", anode pad
dimensions 0.5"x1.0", 2 oz. copper pads.
10. R
qJA
= 60-65°C/W when mounted on 0.5"x0.625", single-sided, FR-4 board with minimum recommended pad layout.
0
1.5
3.0
4.5
7.5
6.0
0
25
50
75
100
125
150
I,DCF
O
RWARD CURRENT (A)
F
T , AMBIENT TEMPERATURE (°C)
Fig. 5 DC Forward Current Derating, Per Elemen
t
A
Note 3
Note 4
Note 5
0
1.5
3
4.5
6
0
1
3
2
4
5
6
7
8
9
10
P , FORWARD POWER DISSIPATION (W)
F
I , FORWARD CURRENT (A)
Fi
g
. 6 Forward Power Dissipation, Per Element
F
Note 6
Note 7
60
80
70
160
150
140
130
120
110
100
90
0
10
20
30
40
T , DERATED AMBIENT TEMPERATURE (°C)
A
V , DC REVERSE VOLTAGE (V)
Fig. 7 Operating Temperature Derating, Per Elemen
t
R
Note 10
Note 8
Note 9
NOT RECOMMENDED
FOR NEW DESIGNS
USE PDS1040CTL
P1-P3P4-P4

SBM1040CT-13-F

Mfr. #:
Buy SBM1040CT-13-F
Manufacturer:
Diodes Incorporated
Description:
Schottky Diodes & Rectifiers 10A 40V
Lifecycle:
New from this manufacturer.
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