050-7701 Rev B 10 - 2012
PRODUCT BENEFITS
• Higher Reliability Systems
• Minimizes or eliminates
snubber
PRODUCT FEATURES
• Zero Recovery Times (t
rr
)
• Popular TO-247 Package
• Low Forward Voltage
• Low Leakage Current
PRODUCT APPLICATIONS
• Anti-Parallel Diode
-Switchmode Power Supply
-Inverters
• Power Factor Correction (PFC)
APT10SCD120BCT
1200V 10A
MAXIMUM RATINGS All Ratings per Leg: T
C
= 25°C unless otherwise specifi ed.
Microsemi Website - http://www.microsemi.com
Zero Recovery Silicon Carbide Schottky Diode
Symbol Characteristic / Test Conditions Ratings Unit
V
R
Maximum D.C. Reverse Voltage
1200 VoltsV
RRM
Maximum Peak Repetitive Reverse Voltage
V
RWM
Maximum Working Peak Reverse Voltage
I
F
Maximum D.C. Forward Current
T
C
= 25°C 36
Amps
T
C
= 135°C 10
I
FRM
Repetitive Peak Forward Suge Current (T
J
= 45°C, t
p
= 10ms, Half Sine Wave)
50
I
FSM
Non-Repetitive Forward Surge Current (T
J
= 25°C, t
p
= 10ms, Half Sine)
110
P
tot
Power Dissipation
T
C
= 25°C 125
W
T
C
= 110°C 45
T
J
, T
STG
Operating and Storage Junction Temperature Range -55 to 150
°C
T
L
Lead Temperature for 10 Seconds 300
Symbol Characteristic / Test Conditions Min Typ Max Unit
V
F
Forward Voltage
I
F
= 10A T
J
= 25°C 1.5 1.8
Volts
I
F
= 10A, T
J
= 150°C 2.1
I
RM
Maximum Reverse Leakage Current
V
R
= 1200V T
J
= 25°C 200
A
V
R
= 1200V, T
J
= 150°C 1000
Q
c
Total Capactive Charge V
R
= 800V, I
F
= 10A, di/dt = -100A/s, T
J
= 25°C 30 nC
C
T
Junction Capacitance V
R
= 0V, T
J
= 25°C, f = 1MHz 600
pFJunction Capacitance V
R
= 200V, T
J
= 25°C, f = 1MHz 71
Junction Capacitance V
R
= 400V, T
J
= 25°C, f = 1MHz 52
STATIC ELECTRICAL CHARACTERISTICS
1 - Anode 1
2 - Common Cathode
Back of Case -Cathode
3 - Anode 2
1
3
2
T
O
-
2
4
7
1
2
3
(BCT)
