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PXAC182002FC-V1-R250

P1-P3P4-P6P7-P8
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 03, 2018-06-25
All published data at T
CASE
= 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
PXAC182002FC
Thermally-Enhanced High Power RF LDMOS FET
180 W, 28 V, 1805 – 1880 MHz
Description
The PXAC182002FC is a 180-watt LDMOS FET with an asymmetri-
cal design intended for use in multi-standard cellular power amplifier
applications in the 1805 to 1880 MHz frequency band. Features
include dual-path design, input and output matching, high gain and
thermally-enhanced package with earless flanges. Manufactured
with Wolfspeed's advanced LDMOS process, this device provides
excellent thermal performance and superior reliability.
PXAC182002FC
Package H-37248-4
RF Characteristics
Single-carrier WCDMA Specifications (tested in Wolfspeed Doherty test fixture)
V
DD
= 28 V, I
DQ
= 400 mA, V
GSPEAK
= 1.1 V, P
OUT
= 28.2 W avg, ƒ = 1880 MHz, 3GPP signal, channel bandwidth = 3.84
MHz, peak/average = 10 dB @ 0.01% CCDF
Characteristic Symbol Min Typ Max Unit
Gain G
ps
15.5 16.5 — dB
Drain Efficiency
h
D
48.5 51 — %
Adjancent Channel Power Ratio ACPR — –30 –26 dBc
Features
• Broadband internal input and output matching
• Asymmetrical Doherty design
- Main: 70 W Typ (P
1dB
)
- Peak: 110 W Typ (P
1dB
)
• Typical pulsed CW performance, 1880 MHz, 28 V,
combined outputs
- Output power at P
3dB
= 194 W
- Efficiency = 64%
- Gain = 14 dB
• Capable of handling 10:1 VSWR @28 V, 110 W
(CW) output power
• Integrated ESD protection
• Human Body Model Class 1C (per ANSI/ESDA/
JEDEC/JS-001)
• Low thermal resistance
• Pb-free and RoHS compliant
-60
-40
-20
0
20
40
60
0
4
8
12
16
20
24
25 30 35 40 45 50 55
Efficiency (%)
Peak/Average Ratio, Gain (dB)
Average Output Power (dBm)
Single-carrier WCDMA Drive-up
V
DD
= 28 V, I
DQ
= 400 mA, ƒ = 1880 MHz,
3GPP WCDMA signal,
PAR = 10 dB, 3.84 MHz BW
Gain
Efficiency
PAR @ 0.01% CCDF
c182002fc_g1
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 03, 2018-06-25
2
PXAC182002FC
DC Characteristics (each side)
Characteristic Conditions Symbol Min Typ Max Unit
Drain-Source Breakdown Voltage V
GS
= 0 V, I
DS
= 10 mA V(
BR)DSS
65 — — V
Drain Leakage Current V
DS
= 28 V, V
GS
= 0 V I
DSS
— — 0.1 µA
V
DS
= 63 V, V
GS
= 0 V I
DSS
— — 1.0 µA
On-State Resistance (main) V
GS
= 10 V, V
DS
= 0.1 V R
DS(on)
— 0.18 — W
(peak) V
GS
= 10 V, V
DS
= 0.1 V R
DS(on)
— 0.135 — W
Operating Gate Voltage (main) V
DS
= 28 V, I
DQ
= 400 mA V
GS
2.55 2.65 2.75 V
(peak) V
DS
= 28 V, I
DQ
= 0 A V
GS
0.9 1.2 1.3 V
Gate Leakage Current V
GS
= 10 V, V
DS
= 0 V I
GSS
— — 0.1 µA
Maximum Ratings
Parameter Symbol Value Unit
Drain-Source Voltage V
DSS
65 V
Gate-Source Voltage V
GS
–6 to +10 V
Operating Voltage V
DD
0 to +32 V
Junction Temperature T
J
225 °C
Storage Temperature Range T
STG
–65 to +150 °C
Thermal Resistance (main, T
CASE
= 70°C, 28 W CW) R
qJC
1.088 °C/W
(peak, T
CASE
= 70°C, 100 W CW) R
qJC
0.587 °C/W
Ordering Information
Type and Version Order Code Package Description Shipping
PXAC182002FC V1 R0 PXAC182002FC-V1-R0 H-37248-4, earless flange Tape & Reel, 50 pcs
PXAC182002FC V1 R250 PXAC182002FC-V1-R250 H-37248-4, earless flange Tape & Reel, 250 pcs
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com
Rev. 03, 2018-06-25
3
PXAC182002FC
Typical Performance (data taken in a production test fixture)
0
10
20
30
40
50
60
-70
-60
-50
-40
-30
-20
-10
27 32 37 42 47 52
Efficiency(%)
ACP Up & Low (dBc)
Average Output Power (dBm)
Single-carrier WCDMA Drive-up
V
DD
= 28 V, I
DQ
= 400 mA, ƒ = 1880 MHz,
3GPP WCDMA signal, PAR = 10 dB,
BW = 3.84 MHz
Efficiency
ACP Up
ACP Low
c182002fc_g2
-50
-45
-40
-35
-30
-25
-20
27 32 37 42 47 52
ACP Up & Low (dBc)
Average Output Power (dBm)
Single-carrier WCDMA 3GPP Drive-up
V
DD
= 28 V, I
DQ
= 400 mA, ƒ = 1805-1880 MHz,
3GPP WCDMA signal, PAR = 10 dB,
BW = 3.84 MHz
1880 ACPL
1880 ACPU
1842.5 ACPL
1842.5 ACPU
1805 ACPL
1805 ACPU
c182002fc_g3
5
15
25
35
45
55
65
0
4
8
12
16
20
24
29 33 37 41 45 49 53 57
Efficiency (%)
Gain (dB)
Output Power (dBm)
CW Performance
V
DD
= 28 V, I
DQ
= 400mA
1842.5 Gain
1805 Gain
1880 Gain
1880 Eff
1842.5 Eff
1805 Eff
Efficiency
Gain
c182002fc_g4
5
20
35
50
65
5
10
15
20
25
27 35 43 51 59
Efficiency (%)
Gain (dB)
Output Power (dBm)
CW Performance
at various V
DD
I
DQ
= 400 mA, ƒ = 1880 MHz
24V Gain
28V Gain
32V Gain
24V Eff
28V Eff
32V Eff
Gain
Efficiency
c182002fc_g5
P1-P3P4-P6P7-P8

PXAC182002FC-V1-R250

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Buy PXAC182002FC-V1-R250
Manufacturer:
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Description:
RF MOSFET Transistors RF LDMOS FET
Lifecycle:
New from this manufacturer.
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