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SI5482DU-T1-GE3

P1-P3P4-P6P7-P7
www.vishay.com
4
Document Number: 73594
S-81448-Rev. B, 23-Jun-08
Vishay Siliconix
Si5482DU
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Source-Drain Diode Forward Voltage
Threshold Voltage
0.0 0.2 0.4 0.6 0.8 1.0 1.2
40
1
10
T
J
= 150 °C
V
SD
- Source-to-Drain Voltage (V)
)A( tnerruC ecruoS -I
S
T
J
= 25 °C
0.4
0.6
0.8
1.0
1.2
1.4
- 50 - 25 0 25 50 75 100 125 150
I
D
= 250 µA
T
J
- Temperature (°C)
V
)
h
t(
S
G
)
V(
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
0246810
I
D
= 7.4 A
V
GS
- Gate-to-Source Voltage (V)
R
)no(SD
(Ω) ecnatsiseR-nO ecruoS-ot-niarD -
T
A
= 25 °C
T
A
= 125 °C
0.010
0.015
0.020
0.025
0.030
0.035
0.040
0
30
40
10
20
)W(
rewoP
Time (s)
1 10000.1 0.01 0.001
10 100
50
Safe Operating Area, Junction-to-Ambient
100
1
0.1 1 100
0.01
10
)A( t
n
er
r
u
C
niarD -I
D
0.1
100 µs
T
A
= 25 °C
Single Pulse
10 ms
100 ms
DC
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
1 s
10 s
Limited by R
DS(on)
*
10
1 ms
BVDSS Limited
Document Number: 73594
S-81448-Rev. B, 23-Jun-08
www.vishay.com
5
Vishay Siliconix
Si5482DU
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Current Derating*
0
8
16
24
32
40
0 25 50 75 100 125 150
Package Limited
I
D
)A( tnerruC niarD -
T
C
- Case Temperature (°C)
Power Derating
0
5
10
15
20
25
30
35
25 50 75 100 125 150
T
C
- Case Temperature (°C)
)W( noitapissiD rewoP
www.vishay.com
6
Document Number: 73594
S-81448-Rev. B, 23-Jun-08
Vishay Siliconix
Si5482DU
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?73594.
Normalized Thermal Transient Impedance, Junction-to-Ambient
10
-3
10
-2
1 10 1000 10
-1
10
-4
100
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
tneisnarT evitceffE dezilamroN
ecnadepmI lamrehT
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 75 °C/W
3. T
JM
- T
A
= P
DM
Z
thJA
(t)
t
1
t
2
t
1
t
2
Notes:
4. Surface Mounted
P
DM
Normalized Thermal Transient Impedance, Junction-to-Case
10
-3
10
-2
1 10
-1
10
-4
0.2
0.1
0.05
0.02
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
tneisnarT ev
i
tceffE de
z
ilamroN
ecnadepmI
la
mre
hT
Single Pulse
1
0.1
P1-P3P4-P6P7-P7

SI5482DU-T1-GE3

Mfr. #:
Buy SI5482DU-T1-GE3
Manufacturer:
Vishay
Description:
MOSFET N-CH 30V 12A PPAK CHIPFET
Lifecycle:
New from this manufacturer.
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