SE30AFB, SE30AFD, SE30AFG, SE30AFJ
www.vishay.com
Vishay General Semiconductor
Revision: 27-Jul-15
1
Document Number: 89955
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Surface Mount ESD Capability Rectifiers
TYPICAL APPLICATIONS
General purpose, power line polarity protection, in both
consumer and automotive applications.
FEATURES
• Very low profile - typical height of 0.95 mm
• Ideal for automated placement
• Oxide planar chip junction
• Low forward voltage drop, low leakage current
• ESD capability
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
MECHANICAL DATA
Case: DO-221AC (SlimSMA)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Base P/NHM3 - halogen-free, RoHS-compliant, and
AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 2 whisker test, HM3 suffix
meets JESD 201 class 2 whisker test
Polarity: Color band denotes the cathode end
Notes
(1)
Mounted on 15 mm x 15 mm pad areas, 2 oz. FR4 PCB
(2)
Free air, mounted on recommended copper pad area
Notes
(1)
Pulse test: 300 µs pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width 40 ms
PRIMARY CHARACTERISTICS
I
F(AV)
3.0 A
V
RRM
100 V, 200 V, 400 V, 600 V
I
FSM
40 A
V
F
at I
F
= 3.0 A (T
A
= 125 °C) 0.86 V
I
R
10 µA
T
J
max. 175 °C
Package DO-221AC (SlimSMA)
Diode variations Single die
DO-221AC
SlimSMA
Top View
Bottom View
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL SE30AFB SE30AFD SE30AFG SE30AFJ UNIT
Device marking code S3B S3D S3G S3J
Maximum repetitive peak reverse voltage V
RRM
100 200 400 600 V
Maximum DC forward current
I
F
(1)
3.0
A
I
F
(2)
1.4
Peak forward surge current 10 ms single half
sine-wave superimposed on rated load
I
FSM
40 A
Operating junction and storage temperature range T
J
, T
STG
-55 to +175 °C
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT
Instantaneous forward voltage
I
F
= 1.5 A
T
A
= 25 °C
V
F
(1)
0.91 -
V
I
F
= 3.0 A 0.97 1.1
I
F
= 1.5 A
T
A
= 125 °C
0.79 -
I
F
= 3.0 A 0.86 0.98
Reverse current Rated V
R
T
A
= 25 °C
I
R
(2)
-10
µA
T
A
= 125 °C 13 100
Typical reverse recovery time I
F
= 0.5 A, I
R
= 1.0 A, I
rr
= 0.25 A t
rr
1.5 - µs
Typical junction capacitance 4.0 V, 1 MHz C
J
19 - pF
