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TK13A50DA(STA4,Q,M

P1-P3P4-P6
TK13A50DA
2013-11-01
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ)
TK13A50DA
Switching Regulator Applications
• Low drain-source ON-resistance: R
DS (ON)
= 0.39 Ω (typ.)
• High forward transfer admittance: ⎪Y
fs
⎪ = 6.0 S (typ.)
• Low leakage current: I
DSS
= 10 μA (max) (V
DS
= 500 V)
• Enhancement mode: V
th
= 2.0 to 4.0 V (V
DS
= 10 V, I
D
= 1 mA)
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics Symbol Rating Unit
Drain-source voltage V
DSS
500 V
Gate-source voltage V
GSS
±30 V
DC (Note 1) I
D
12.5
Drain current
Pulse (Note 1) I
DP
50
A
Drain power dissipation (Tc = 25°C)
P
D
45 W
Single pulse avalanche energy
(Note 2)
E
AS
416 mJ
Avalanche current I
AR
12.5 A
Repetitive avalanche energy (Note 3) E
AR
4.5 mJ
Channel temperature T
ch
150 °C
Storage temperature range T
stg
−55 to 150 °C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/“Derating Concept and Methods’’) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics Symbol Max Unit
Thermal resistance, channel to case R
th (ch-c)
2.78 °C/W
Thermal resistance, channel to ambient R
th (ch-a)
62.5 °C/W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: V
DD
= 90 V, T
ch
= 25°C (initial), L = 4.53 mH, R
G
= 25 Ω, I
AR
= 12.5 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
Unit: mm
JEDEC ⎯
JEITA SC-67
TOSHIBA 2-10U1B
Weight: 1.7 g (typ.)
1
3
2
1: Gate
2: Drain
3: Source
Internal Connection
Start of commercial production
2008-09
TK13A50DA
2013-11-01
2
Electrical Characteristics
(Ta
=
25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Gate leakage current I
GSS
V
GS
= ±30 V, V
DS
= 0 V ⎯ ⎯ ±1 μA
Drain cut-off current I
DSS
V
DS
= 500 V, V
GS
= 0 V ⎯ ⎯ 10 μA
Drain-source breakdown voltage V
(BR) DSS
I
D
= 10 mA, V
GS
= 0 V 500 ⎯ ⎯ V
Gate threshold voltage V
th
V
DS
= 10 V, I
D
= 1 mA 2.0 ⎯ 4.0 V
Drain-source ON-resistance R
DS (ON)
V
GS
= 10 V, I
D
= 6.3 A ⎯ 0.39 0.47
Ω
Forward transfer admittance |Y
fs
| V
DS
= 10 V, I
D
= 6.3 A 1.5 6.0 ⎯ S
Input capacitance C
iss
⎯ 1550 ⎯
Reverse transfer capacitance C
rss
⎯ 7 ⎯
Output capacitance C
oss
V
DS
= 25 V, V
GS
= 0 V, f = 1 MHz
⎯ 165 ⎯
pF
Rise time t
r
⎯
25
⎯
Turn-on time t
on
⎯
60
⎯
Fall time t
f
⎯
15
⎯
Switching time
Turn-off time t
off
Duty ≤ 1%, t
w
= 10 μs
⎯
110
⎯
ns
Total gate charge Q
g
⎯
28
⎯
Gate-source charge Q
gs
⎯
18
⎯
Gate-drain charge Q
gd
V
DD
≈ 400 V, V
GS
= 10 V, I
D
= 12.5 A
⎯
10
⎯
nC
Source-Drain Ratings and Characteristics
(Ta
=
25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Continuous drain reverse current (Note 1)
I
DR
⎯ ⎯ ⎯ 12.5 A
Pulse drain reverse current (Note 1) I
DRP
⎯ ⎯ ⎯ 50 A
Forward voltage (diode) V
DSF
I
DR
= 12.5 A, V
GS
= 0 V ⎯ ⎯ −1.7
V
Reverse recovery time t
rr
⎯ 1300 ⎯ ns
Reverse recovery charge Q
rr
I
DR
= 12.5 A, V
GS
= 0 V,
dI
DR
/dt = 100 A/μs
⎯ 13 ⎯ μC
Marking
Note 4: A line under a Lot No. identifies the indication of product
Labels.
Not underlined: `Pb`/INCLUDES > MCV
Underlined: `G`/RoHS COMPATIBLE or `G`/RoHS `Pb`
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2011/65/EU of the European Parliament
and of the Council of 8 June 2011 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
Lot No.
Note 4
K13A50DA
Part No. (or abbreviation code)
R
L
= 32 Ω
0 V
10 V
V
GS
V
DD
≈ 200 V
I
D
= 6.3 A V
OUT
50 Ω
TK13A50DA
2013-11-01
3
V
GS
= 10 V, 15 V
0.1
0.1 1 10 100
1
10
0.1
10
100
0.1 1 100
25
100
Tc = −55°C
1
10
0
6
8
10
0
I
D
= 12.5 A
4 8 12 16 20
3
6.3
4
2
0
0 2 4 6 8 10
8
24
Tc = −55°C
25
100
12
16
4
20
16
12
8
4
0
20
0 20 50 40 30 10
V
GS
= 5 V
5.5
5.75
6.25
10,8
6.5
6.75
6
10
6
4
0
8
2
0 2 4 6 8
V
GS
= 4.5 V
5
5.25
5.5
5.75
10,8
10
6
6.25
R
DS (ON)
– I
D
V
DS
– V
GS
I
D
– V
DS
⎪Y
fs
⎪ – I
D
I
D
– V
DS
FORWARD TRANSFER ADMITTANCE
⎪Y
fs
⎪ (S)
DRAIN CURRENT I
D
(A)
DRAIN CURRENT I
D
(A)
DRAIN-SOURCE VOLTAGE V
DS
(V)
DRAIN-SOURCE VOLTAGE V
DS
(V)
GATE-SOURCE VOLTAGE V
GS
(V)
GATE-SOURCE VOLTAGE V
GS
(V)
DRAIN CURRENT I
D
(A) DRAIN CURRENT I
D
(A)
I
D
– V
GS
COMMON
SOURCE
Tc = 25°C
PULSE TEST
COMMON SOURCE
Tc = 25°C
PULSE TEST
COMMON SOURCE
V
DS
= 20 V
PULSE TEST
COMMON SOURCE
Tc = 25°C
PULSE TEST
COMMON SOURCE
V
DS
= 20 V
PULSE TEST
COMMON SOURCE
Tc = 25°C
PULSE TEST
DRAIN CURRENT I
D
(A)
DRAIN-SOURCE ON RESISTANCE
R
DS (ON)
(Ω)
DRAIN-SOURCE VOLTAGE V
DS
(V)
P1-P3P4-P6

TK13A50DA(STA4,Q,M

Mfr. #:
Buy TK13A50DA(STA4,Q,M
Manufacturer:
Toshiba
Description:
MOSFET N-Ch MOS 13A 500V 45W 1550pF 0.47
Lifecycle:
New from this manufacturer.
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