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Document Number: 71641
S13-0104-Rev. D, 21-Jan-13
Vishay Siliconix
SUD15N15-95
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For technical questions, contact: pmostechsupport@vishay.com
TYPICAL CHARACTERISTICS (25 °C unless noted)
THERMAL RATINGS
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Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71641
.
On-Resistance vs. Junction Temperature
(Normalized)- On-Resistance R
DS(on)
0.0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
- 50 - 25 0 25 50 75 100 125 150 175
T
J
- Junction Temperature (°C)
V
GS
= 10 V
I
D
= 15 A
Source-Drain Diode Forward Voltage
V
SD
- Source-to-Drain Voltage (V)
- Source Current (A)I
S
100
10
1
0.3 0.6 0.9 1.2
T
J
= 25 °C
T
J
= 150 °C
0
Maximum Avalanche Drain Current
vs. Case Temperature
0
5
10
15
20
0 25 50 75 100 125 150 175
T
C
- Case Temperature (°C)
- Drain Current (A)I
D
Safe Operating Area
- Drain Current (A)I
D
10
0.1
0.1 1 10 1000
Limited by R
DS(on)
1
100
T
C
= 25 °C
Single Pulse
10 ms
100 ms
1 s, DC
100 µs
10 µs
100
1 ms
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specied
*
Normalized Thermal Transient Impedance, Junction-to-Case
Square Wave Pulse Duration (sec)
2
1
0.1
0.01
10
-4
10
-3
10
-2
10
-1
1
Normalized Effective Transient
Thermal Impedance
0.2
0.1
Duty Cycle = 0.5
10
0.05
0.02
Single Pulse
