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AP01CV0
P1-P3
P4-P4
SANKEN ELECTR
IC CO., LTD.
AP01C
040722
1
/
4
61426-
01
1.
Scope
The present specificatio
ns shall apply to
an
AP01C.
2.
Outline
T
y
pe
Silicon Diode
Structure
Resin Molded
Applications
High Frequency
Rectification
3.
Flammability
UL94V
-0(Equivalent)
SANKEN ELECTR
IC CO., LTD.
AP01C
040722
2
/
4
61426-
01
4.
Absolute maximum ratin
gs
N
o
.
Item
Symbol
Unit
Rating
Conditions
1
T
ransient Peak Reverse V
oltage
V
RSM
V
1050
2
Peak Reverse
V
oltag
e
V
RM
V
1000
3
A
verage Forward Current
I
F(A
V)
A
0.2
Refer to Derating of 7
4
Peak Surge Forw
ard Current
I
FSM
A
5
.0
10msec.
Half sinewave, one shot
5
I
2
t Limiting
V
alue
I
2
t
A
2
s
0.125
1msec
≤
t
≤
10
msec
6
Junction T
emperature
T
j
°C
-
40
~+150
7
Storage T
em
perature
T
stg
°C
-
40
~+
150
5.
Electrical characteristic
s (T
a=
25
°C
,
unless other
wise specified)
N
o
.
Item
Symbol
Unit
V
alue
Conditions
1
Forward V
oltage Drop
V
F
V
4.0 max.
I
F
=0.2A
2
Reverse Leakage Current
I
R
μA
100 max.
V
R
=V
RM
3
Reverse
Leakage
Current
Under
High T
emperature
H
・
I
R
μA
500 max.
V
R
=V
RM
, T
j
=100
°C
4
Reverse Recovery T
ime
t
rr
1
ns
200 max.
I
F
=I
RP
=100mA
9
0
%
R
e
c
o
ve
ry
p
oi
n
t
,
T
j
=
2
5
°C
t
rr
2
ns
80 max.
I
F
=100mA
,
I
RP
=200
mA
7
5
%
R
e
c
o
ve
ry
p
oi
n
t
,
T
j
=
2
5
°C
5
Thermal Resistance
R
th(j
-
l)
℃
/W
22 max.
Between Junction and Lead
SANKEN ELECTR
IC CO., LTD.
AP01C
040722
3
/
4
61426-
01
6.
Characteristics
I
F(A
V)
- P
F
P
F
(W)
Forward Power Dissipation (W)
I
F(A
V)
(A)
A
verage Forward Current (A)
7.
Derating
T
l
- I
F(A
V)
V
R
=1000
(V)
I
F(A
V)
(A)
A
verage Forward Current (A)
T
l
(
°C
)
Lead T
emperature (
°C
)
0
.0
0
.1
0
.2
50
100
150
0
.0
0
.5
1
.0
0
.0
0
.1
0
.2
Tj=150
℃
t
T
t/T=1/6
t/T=1/3,sinewave
t/T=1/2
DC
Tj=150
℃
t
T
t/T=1/6
t/T=1/2
DC
sinewave
t/T=1/3
P1-P3
P4-P4
AP01CV0
Mfr. #:
Buy AP01CV0
Manufacturer:
Description:
DIODE GEN PURP 1KV 200MA AXIAL
Lifecycle:
New from this manufacturer.
Delivery:
DHL
FedEx
Ups
TNT
EMS
Payment:
T/T
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