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PS2535-1-A

P1-P3P4-P6P7-P9P10-P12
ORDERING INFORMATION
Part Number Order Number Solder Plating
Specification
Packing Style Safety Standard
Approval
Application Part
Number
*1
PS2535-1 PS2535-1-A Pb-Free Magazine case 100 pcs Standard products PS2535-1
PS2535L-1 PS2535L-1-A (UL, BSI approved)
PS2535L-1-E3 PS2535L-1-E3-A Embossed Tape 1 000 pcs/reel
PS2535L-1-E4 PS2535L-1-E4-A
PS2535L-1-F3 PS2535L-1-F3-A Embossed Tape 2 000 pcs/reel
PS2535L-1-F4 PS2535L-1-F4-A
PS2535-1-V PS2535-1-V-A Magazine case 100 pcs DIN EN60747-5-2
PS2535L-1-V PS2535L-1-V-A (VDE0884 Part2)
PS2535L-1-V-E3 PS2535L-1-V-E3-A Embossed Tape 1 000 pcs/reel Approved (Option)
PS2535L-1-V-E4 PS2535L-1-V-E4-A
PS2535L-1-V-F3 PS2535L-1-V-F3-A Embossed Tape 2 000 pcs/reel
PS2535L-1-V-F4 PS2535L-1-V-F4-A
*1 For the application of the Safety Standard, following part number should be used.
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified)
Parameter Symbol Ratings Unit
Diode Forward Current (DC) IF 50 mA
Reverse Voltage VR 6 V
Power Dissipation Derating
∆
PD/°C 0.7 mW/°C
Power Dissipation PD 70 mW
Peak Forward Current
*1
IFP 0.5 A
Transistor Collector to Emitter Voltage VCEO 350 V
Emitter to Collector Voltage VECO 0.3 V
Collector Current IC 120 mA
Power Dissipation Derating
∆
PC/°C 2.0 mW/°C
Power Dissipation PC 200 mW
Isolation Voltage
*2
BV 5 000 Vr.m.s.
Operating Ambient Temperature TA −55 to +100 °C
Storage Temperature Tstg −55 to +150 °C
*1 PW = 100
µ
s, Duty Cycle = 1%
*2 AC voltage for 1 minute at T
A = 25°C, RH = 60% between input and output
Pins 1-2 shorted together, 3-4 shorted together.
Data Sheet PN10447EJ02V0DS
4
PS2535-1,PS2535L-1
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Diode Forward Voltage VF IF = 10 mA 1.2 1.4 V
Reverse Current IR VR = 5 V 5
µ
A
Terminal Capacitance Ct V = 0 V, f = 1.0 MHz 15 pF
Transistor
Collector to Emitter
Dark Current
I
CEO VCE = 350 V, IF = 0 mA 400 nA
Coupled
Current Transfer Ratio
(I
C/IF)
*1
CTR IF = 1 mA, VCE = 2 V 400 1 500 5 500 %
Collector Saturation
Voltage
V
CE (sat) IF = 1 mA, IC = 2 mA 1.0 V
Isolation Resistance RI-O VI-O = 1.0 kVDC 10
11
Ω
Isolation Capacitance CI-O V = 0 V, f = 1.0 MHz 0.6 pF
Rise Time
*2
tr VCC = 5 V, IC = 10 mA, RL = 100 Ω 18
µ
s
Fall Time
*2
tf 5
*1 CTR rank
N : 400 to 5 500 (%)
L : 1 500 to 5 500 (%)
*2 Test circuit for switching time
PW = 1 ms,
Duty cycle = 1/10
Pulse input
V
CC
V
OUT
In monitor
R
L
= 100 Ω50 Ω
I
F
Data Sheet PN10447EJ02V0DS
5
PS2535-1,PS2535L-1
TYPICAL CHARACTERISTICS (TA = 25°C, unless otherwise specified)
–50
–25
0
25
50
75
100
10 000
100 000
1 000
100
10
1
25
50
75
100
100
80
60
40
20
0
0.7 mW/˚C
2.0 mW/˚C
25 50
75
100
120
140
160
180
200
220
240
100
80
60
40
20
0
100
50
10
5
1
0.5
0.1
0.7 0.9 1.1 1.3 1.50.8 1.0 1.2 1.4
0 ˚C
–25 ˚C
–50 ˚C
T
A
= +100 ˚C
+60 ˚C
+25 ˚C
0.4 0.6 0.8 1.0
1.2
1.4 1.6
100
50
10
5
1
TRANSISTOR POWER DISSIPATION vs.
Transistor Power Dissipation P
C
(mW)
Diode Power Dissipation P
D
(mW)
Ambient Temperature T
A
(˚C)Ambient Temperature T
A
(˚C)
FORWARD CURRENT vs.
Forward Current I
F
(mA)
Forward Voltage V
F
(V)
COLLECTOR CURRENT vs.
Collector Current I
C
(mA)
Collector Saturation Voltage V
CE(sat)
(V)
COLLECTOR TO EMITTER VOLTAGE
COLLECTOR CURRENT vs.
Collector Current I
C
(mA)
Collector to Emitter Voltage V
CE
(V)
COLLECTOR TO EMITTER DARK
Collector to Emitter Dark Current I
CEO
(nA)
Ambient Temperature T
A
(˚C)
I
F
= 0.5 mA
1 mA
5 mA
2 mA
3 mA
CTR = 1 068 %
2 290 %
4 360 %
V
CEO
= 350 V
AMBIENT TEMPERATURE
DIODE POWER DISSIPATION vs.
AMBIENT TEMPERATURE
FORWARD VOLTAGE
COLLECTOR SATURATION VOLTAGE
CURRENT vs. AMBIENT TEMPERATURE
1234
5
100
50
10
5
1
0
1 mA
5 mA
3 mA
2 mA
I
F
= 0.5 mA
Remark The graphs indicate nominal characteristics.
Data Sheet PN10447EJ02V0DS
6
PS2535-1,PS2535L-1
P1-P3P4-P6P7-P9P10-P12

PS2535-1-A

Mfr. #:
Buy PS2535-1-A
Manufacturer:
Renesas Electronics
Description:
Transistor Output Optocouplers 4pin Darlington DC Coupler
Lifecycle:
New from this manufacturer.
Delivery:
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