V
OFFSET
600V or 1200V max.
I
O
+/-
200 mA / 420 mA
V
OUT
10 - 20V or 12 - 20V
t
on/off
(typ.) 750/700 ns
Deadtime (typ.) 250 ns
Product Summary
3-PHASE BRIDGE DRIVER
IR2133/IR2135(J
&
S
) & (PbF)
IR2233
/
IR2235
(
J
&
S
) & (PbF)
Data Sheet No. PD60107 revX
www.irf.com 1
Features
Floating channel designed for bootstrap operation
Fully operational to +600V or+1200V
Tolerant to negative transient voltage
dV/dt immune
Gate drive supply range from 10V/12V to 20V DC and
up to 25V for transient
Undervoltage lockout for all channels
Over-current shut down turns off all six drivers
Independent 3 half-bridge drivers
Matched propagation delay for all channels
2.5V logic compatible
Outputs out of phase with inputs
All parts are also available LEAD-FREE
Description
The IR2133IR2135/IR2233IR2355 (J&S) are high voltage, high speed
power MOSFET and IGBT driver with three independent high side and
low side referenced output channels for 3-phase applications. Propri-
etary HVIC technology enables ruggedized monolithic construction.
Logic inputs are compatible with CMOS or LSTTL outputs, down to
2.5V logic. An independent operational amplifier provides an analog
feedback of bridge current via an external current sense resistor. A
current trip function which terminates all six outputs can also be de-
rived from this resistor. A shutdown function is available to terminate all six outputs. An open drain FAULT signal is provided to
indicate that an over-current or undervoltage shutdown has occurred. Fault conditions are cleared with the FLT-CLR lead. The
output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are
matched to simplify use in high frequency applications. The floating channels can be used to drive N-channel power MOSFETs or
IGBTs in the high side configuration which operates up to 600 volts or 1200 volts.
up to 600V or 1200V
Typical Connection
(Refer to Lead Assignments for correct pin configuration). This/These diagram(s) show electrical connections only.
Please refer to our Application Notes and DesignTips for proper circuit board layout.
Packages
28-Lead SOIC
44-Lead PLCC w/o 12 leads
28-Lead PDIP
IR2133/IR2135/IR2233
/
IR2235(J
&
S
) & (PbF)
2 www.irf.com
Absolute Maximum Ratings
Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All volt-
age parameters are absolute voltages referenced to COM. The Thermal Resistance and Power Dissipation
ratings are measured under board mounted and still air conditions.
Recommended Operating Conditions
The input/output logic timing diagram is shown in figure 1. For proper operation the device should be used within the
recommended conditions. All voltage parameters are absolute voltages referenced to COM. The V
S
offset rating is
tested with all supplies biased at 15V differential.
Note 1:
Logic operational for V
S
of COM - 5V to COM + 600V/1200V. Logic state held for V
S
of COM -5V to COM -V
BS
. (Please refer to the Design Tip
DT97-3 for more details).
Note 2: All input pins, op amp input and output pins are internally clamped with a 5.2V zener diode.
Symbol Definition Min. Max. Units
V
B1,2,3
High side floating supply voltage (IR2133/IR2135) -0.3 625
(IR2233/IR2235) -0.3 1225
V
S1,2,3
High side floating supply offset voltage V
B1,2,3
- 25 V
B1,2,3
+ 0.3
V
HO1,2,3
High side floating output voltage V
S1,2,3
- 0.3 V
B1,2,3
+ 0.3
V
CC
Fixed supply voltage -0.3 25
V
SS
Logic ground V
CC
- 25 V
CC
+ 0.3
V
LO1,2,3
Low side output voltage -0.3 V
CC
+ 0.3
V
IN
Logic input voltage (HIN, LIN, ITRIP, SD & FLT-CLR) V
SS
- 0.3 (V
SS
+ 15) or
(V
CC
+ 0.3)
whichever is
lower
V
IN,AMP
Op amp input voltage (CA+ & CA-) V
SS
- 0.3 V
CC
+ 0.3
V
OUT,AMP
Op amp output voltage (CAO) V
SS
- 0.3 V
CC
+ 0.3
V
FLT
FAULT
output voltage
V
SS
- 0.3 V
CC
+ 0.3
dV
S
/dt Allowable offset supply voltage transient 50
P
D
Package power dissipation @ T
A
25ºC (28 Lead PDIP) 1.5
(28 Lead SOIC) 1.6
(44 lead PLCC) 2.0
Rth
JA
Thermal resistance, junction to ambient (28 Lead PDIP) 83
(28 Lead SOIC) 78
(44 lead PLCC) 63
T
J
Junction temperature 125
T
S
Storage temperature -55 150
T
L
Lead temperature (soldering, 10 seconds 300
ºC
W
V
B1,2,3
High side floating supply voltage V
S1,2,3
+ 10/12 V
S1,2,3
+ 20
V
S1,2,3
High side floating supply offset voltage (IR2133/IR2135) Note 1 600
(IR2233/IR2235) Note 1 1200
V
HO1,2,3
High side floating output voltage V
S1,2,3
V
B1,2,3
V
CC
Fixed supply voltage 10 or 12 20
V
SS
Low side driver return -5 5
V
LO1,2,3
Low side output voltage 0 V
CC
V
IN
Logic input voltage (HIN, LIN, ITRIP, SD & FLT-CLR) V
SS
V
SS
+ 5
V
IN,AMP
Op amp input voltage (CA+ & CA-) V
SS
V
SS
+ 5
V
OUT,AMP
Op amp output voltage (CAO) V
SS
V
SS
+ 5
V
FLT
FAULT
output voltage
V
SS
V
CC
V
Symbol Parameter Definition Min. Max. Units
V/ns
V
ºC/W
IR2133/IR2135/IR2233
/
IR2235(J
&
S
) & (PbF)
www.irf.com 3
Static Electrical Characteristics
V
BIAS
(V
CC
,
V
BS1,2,3
) = 15V unless otherwise specified and T
A
= 25
o
C. All static parameters other than IO and VO
are referenced to V
SS
and are applicable to all six channels (H
S1,2,3
& L
S1,2,3
). The VO and IO parameters are
referenced to COM
and V
S1,2,3
and are applicable to the respective output leads: H
O1,2,3
or L
O1,2,3.
V
IH
Logic “0” Input Voltage (OUT = LO) 2.2
V
IL
Logic “1” Input Voltage (OUT = HI) 0.8
V
FCLR,IH
Logic “0” Fault Clear Input Voltage 2.2
V
FCLR,IL
Logic “1” Fault Clear Input Voltage 0.8
V
SD,TH
+
SD Input Positive Going Threshold 1.6 1.9 2.2
V
SD,TH
-
SD Input Negative Going Threshold 1.4 1.7 2.0
V
IT,TH
+
I
ITRIP
Input Positive Going Threshold 470 570 670
V
IT,TH
-
I
ITRIP
Input Negative Going Threshold 360 460 560
V
OH
High Level Output Voltage, V
BIAS
- V
O
100 V
IN
= 0V, I
O
= 0A
V
OL
Low Level Output Voltage, V
O
100 V
IN
= 5V, I
O
= 0A
I
LK
Offset Supply Leakage Current (IR2133/IR2135) 50 V
B1,2,3
=V
S1,2,3
= 600V
(IR2233/IR2235) 50 V
B1,2,3
=V
S1,2,3
= 1200V
I
QBS
Quiescent V
BS
Supply Current 50 100 V
IN
= 0V or 5V
I
QCC
Quiescent V
CC
Supply Current 4 8 mA V
IN
= 0V or 5V
I
IN
+
Logic “1” Input Bias Current (OUT = HI) 200 350 V
IN
= 0V
I
IN
-
Logic “0” Input Bias Current (OUT = LO) 100 250 V
IN
= 5V
I
SD
+
“High” Shutdown Bias Current 30 100 SD = 5V
I
SD
-
“Low” Shutdown Bias Current 100 nA SD = 0V
I
ITRIP
+
“High” I
ITRIP
Bias Current 30 100 µA I
ITRIP
= 5V
I
ITRIP
-
“Low” I
ITRIP
Bias Current 100 nA I
ITRIP
= 0V
Symbol
V
µA
Dynamic Electrical Characteristics
V
BIAS
(
V
CC
,
V
BS1,2,3
)
= 15V, V
S1,2,3
= V
SS
,
T
A
= 25
o
C and C
L
= 1000 pF unless otherwise specified.
Definition Min. Typ. Max. Units Test Conditions
t
on
Turn-on propagation delay 500 750 1000
t
off
Turn-off propagation delay 450 700 950
t
r
Turn-on rise time 90 150
t
f
Turn-off fall time 40 70
t
sd
SD to output shutdown propagation delay 500 750 1000 V
IN
,V
SD
= 0 & 5V
t
itrip
ITRIP to output shutdown propagation delay 600 850 1100 V
IN
,V
ITRIP
= 0 & 5V
t
bl
ITRIP blanking time 400 ITRIP = 1V
t
flt
ITRIP to FAULT propagation delay 400 650 900 V
IN
,V
ITRIP
= 0 & 5V
t
fil,in
Input filter time (HIN, LIN and SD) 310 V
IN
= 0 & 5V
t
fltclr
FLT-CLR to FAULT clear time 600 850 1100 V
IN
,V
ITRIP
= 0 & 5V
DT Deadtime, LS turn-off to HS turn-on & 100 250 400 V
IN
= 0 & 5V
HS turn-off to LS turn-on
SR+ Amplifier slew rate (positive) 5 10
SR- Amplifier slew rate (negative) 2 2.5
Symbol
V/µs
ns
V
IN
= 0 & 5V
V
S1,2,3
= 0 to 600V
or 1200V
Definition Min. Typ. Max. Units Test Conditions
NOTE: For high side PWM, HIN pulse width must be ≥ 1µ sec
mV
µA

IR2135JPbF

Mfr. #:
Manufacturer:
Infineon Technologies
Description:
Gate Drivers 3 PHASE DRVR HI & LO SIDE INPUTS
Lifecycle:
New from this manufacturer.
Delivery:
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