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IRFR12N25D/IRFU12N25D
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
1 10 100 1000
V
DS
, Drain-to-Source Voltage (V)
10
100
1000
10000
C, Capacitance(pF)
Coss
Crss
Ciss
V
GS
= 0V, f = 1 MHZ
C
iss
= C
gs
+ C
gd
, C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
0 5 10 15 20 25
0
2
5
7
10
12
Q , Total Gate Char
e
nC
V , Gate-to-Source Voltage (V)
G
GS
I =
D
8.4A
V = 50V
DS
V = 125V
DS
V = 200V
DS
0.0 1.0 2.0 3.0
V
SD
, Source-toDrain Voltage (V)
0.10
1.00
10.00
100.00
I
SD
, Reverse Drain Current (A)
T
J
= 25°C
T
J
= 175°C
V
GS
= 0V
1 10 100 1000
V
DS
, Drain-toSource Voltage (V)
0.1
1
10
100
1000
I
D
, Drain-to-Source Current (A)
Tc = 25°C
Tj = 175°C
Single Pulse
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY R
DS
(on)
100µsec
