© Semiconductor Components Industries, LLC, 2005
October, 2005 − Rev. 3
1 Publication Order Number:
BF959/D
BF959
VHF Transistor
NPN Silicon
Features
• Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage V
CEO
20 Vdc
Collector−Base Voltage V
CBO
30 Vdc
Emitter−Base Voltage V
EBO
3.0 Vdc
Collector Current − Continuous I
C
100 mAdc
Total Device Dissipation
@ T
A
= 25°C
Derate above 25°C
P
D
625
5.0
mW
mW/°C
Total Device Dissipation
@ T
C
= 25°C
Derate above 25°C
P
D
1.5
12
W
mW/°C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
−55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance,
Junction−to−Ambient
R
q
JA
200 °C/W
Thermal Resistance,
Junction−to−Case
R
q
JC
83.3 °C/W
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Device Package Shipping
†
ORDERING INFORMATION
BF959 TO−92
TO−92
CASE 29
STYLE 21
5000 Units/Box
BF959ZL1 TO−92 2000/Ammo Pack
COLLECTOR
1
3
BASE
2
EMITTER
BF959RL1 TO−92 2000/Tape & Ree
MARKING
DIAGRAM
BF
959
AYWWG
G
3
2
1
http://onsemi.com
BF959G TO−92
(Pb−Free)
5000 Units/Box
BF959ZL1G TO−92
(Pb−Free)
2000/Ammo Pack
BF959RL1G TO−92
(Pb−Free)
2000/Tape & Ree
BF959 = Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.