BF959

© Semiconductor Components Industries, LLC, 2005
October, 2005 − Rev. 3
1 Publication Order Number:
BF959/D
BF959
VHF Transistor
NPN Silicon
Features
Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating Symbol Value Unit
CollectorEmitter Voltage V
CEO
20 Vdc
CollectorBase Voltage V
CBO
30 Vdc
EmitterBase Voltage V
EBO
3.0 Vdc
Collector Current − Continuous I
C
100 mAdc
Total Device Dissipation
@ T
A
= 25°C
Derate above 25°C
P
D
625
5.0
mW
mW/°C
Total Device Dissipation
@ T
C
= 25°C
Derate above 25°C
P
D
1.5
12
W
mW/°C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance,
Junction−to−Ambient
R
q
JA
200 °C/W
Thermal Resistance,
Junction−to−Case
R
q
JC
83.3 °C/W
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Device Package Shipping
ORDERING INFORMATION
BF959 TO−92
TO−92
CASE 29
STYLE 21
5000 Units/Box
BF959ZL1 TO−92 2000/Ammo Pack
COLLECTOR
1
3
BASE
2
EMITTER
BF959RL1 TO−92 2000/Tape & Ree
l
MARKING
DIAGRAM
BF
959
AYWWG
G
3
2
1
http://onsemi.com
BF959G TO−92
(Pb−Free)
5000 Units/Box
BF959ZL1G TO−92
(Pb−Free)
2000/Ammo Pack
BF959RL1G TO−92
(Pb−Free)
2000/Tape & Ree
l
BF959 = Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
BF959
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage (I
C
= 1.0 mAdc, I
B
= 0) V
(BR)CEO
20 Vdc
CollectorBase Breakdown Voltage (I
C
= 10 mAdc, I
E
= 0)
V
(BR)CBO
30 Vdc
EmitterBase Breakdown Voltage (I
E
= 10 mAdc, I
C
= 0)
V
(BR)EBO
3.0 Vdc
Collector Cutoff Current (V
CB
= 20 Vdc, I
E
= 0) I
CBO
100 nAdc
ON CHARACTERISTICS
DC Current Gain
(I
C
= 5.0 mAdc, V
CE
= 10 Vdc)
(I
C
= 20 mAdc, V
CE
= 10 Vdc)
h
FE
35
40
CollectorEmitter Saturation Voltage (I
C
= 30 mAdc, I
B
= 2.0 mAdc) V
CE(sat)
1.0 Vdc
BaseEmitter Saturation Voltage (I
C
= 30 mAdc, I
B
= 2.0 mAdc) V
BE(sat)
1.0 Vdc
SMALL−SIGNAL CHARACTERISTICS
CurrentGain − Bandwidth Product
(I
C
= 20 mAdc, V
CE
= 10 Vdc, f = 100 MHz)
(I
C
= 30 mAdc, V
CE
= 10 Vdc, f = 100 MHz)
f
T
700
600
MHz
Common Emitter Feedback Capacitance
(V
CB
= 10 Vdc, P
f
= 0, f = 10 MHz)
C
re
0.65 pF
Noise Figure (I
C
= 4.0 mA, V
CE
= 10 V, R
S
= 50 W, f = 200 MHz)
N
f
3.0 dB
BF959
http://onsemi.com
3
Figure 1. h
FE
at 10 V
I
C
, COLLECTOR CURRENT (mA)
30
50
200
500
1000
10
1
Figure 2. V
CE(sat)
at I
C
/I
B
= 10
I
C
, COLLECTOR CURRENT (mA)
10 20 30 502345
h
FE
, DC CURRENT GAIN
100
40
20
100
30
50
200
500
10
1102030502345
100
40
20
Figure 3. Current−Gain − Bandwidth Product
I
C
, COLLECTOR CURRENT (mA)
0.8
1.2
1.6
1.8
2.0
0.4
1
Figure 4. Capacitances
V
R
, REVERSE VOLTAGE (VOLTS)
10 20 30 502345
1.4
1
0.6
100 1 10 20 30 502 3 4 5 100
f, CURRENT−GAIN  BANDWIDTH PRODUCT (GHz)
T
C, CAPACITANCE (pF)
0.8
1.2
1.6
1.8
0.4
1.4
1
0.6
0.2
Figure 5. Input Impedance at 30 MHz
I
C
, COLLECTOR CURRENT (mA)
0.3
0.5
2
5
10
0.1
1
Figure 6. Output Impedance at 30 MHz
I
C
, COLLECTOR CURRENT (mA)
10 20 30 502345
1
0.4
0.2
100 1 10 20 30 502345
Y11e (ms)
40
100
300
500
20
200
50
30
10
Y22e ( s)μ
3
4
mV
5 V
10 V
2 V
C
ob
C
ib
C
re
V
CE
= 10 V
g11e
b11e
V
CE
= 10 V
b22e
g22e
40

BF959

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - BJT 100mA 20V VHF NPN
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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