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Document Number: 73036
S-80272-Rev. B, 11-Feb-08
Vishay Siliconix
SUM110N06-3m4L
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS T
J
= 25 °C, unless otherwise noted
Parameter Symbol Test Conditions Min. Typ. Max. Unit
Static
Drain-Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 250 µA
60
V
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 µA
13
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
= ± 20 V
± 100 nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 60 V, V
GS
= 0 V
1
µA
V
DS
= 60 V, V
GS
= 0 V, T
J
= 125 °C
50
V
DS
= 60 V, V
GS
= 0 V, T
J
= 175 °C
10 mA
On-State Drain Current
a
I
D(on)
V
DS
≥ 5 V, V
GS
= 10 V
120 A
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= 10 V, I
D
= 30 A
0.0028 0.0034
Ω
V
GS
= 4.5 V, I
D
= 20 A
0.0033 0.0041
V
GS
= 10 V, I
D
= 30 A, T
J
= 125 °C
0.0055
V
GS
= 10 V, I
D
= 30 A, T
J
= 175 °C
0.007
Forward Transconductance
a
g
fs
V
DS
= 15 V, I
D
= 30 A
30 S
Dynamic
b
Input Capacitance
C
iss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
12900
pFOutput Capacitance
C
oss
1060
Reverse Transfer Capacitance
C
rss
700
Total Gate Charge
c
Q
g
V
DS
= 30 V, V
GS
= 10 V, I
D
= 110 A
200 300
nC
Gate-Source Charge
c
Q
gs
50
Gate-Drain Charge
c
Q
gd
33
Gate Resistance
R
g
f = 1.0 MHz 0.65 1.3 2 Ω
Tur n - O n D e l ay Time
c
t
d(on)
V
DD
= 30 V, R
L
= 0.4 Ω
I
D
≅ 110 A, V
GEN
= 10 V, R
g
= 2.5 Ω
22 35
ns
Rise Time
c
t
r
130 200
Turn-Off Delay Time
c
t
d(off)
110 165
Fall Time
c
t
f
280 420
Source-Drain Diode Ratings and Characteristics T
C
= 25 °C
b
Continuous Current
I
S
110
A
Pulsed Current
I
SM
440
Forward Voltage
a
V
SD
I
F
= 110 A, V
GS
= 0 V
1.0 1.5 V
Reverse Recovery Time
t
rr
I
F
= 110 A, di/dt = 100 A/µs
55 82 ns
Peak Reverse Recovery Charge
I
RM(REC)
3.6 5.4 A
Reverse Recovery Charge
Q
rr
0.1 0.22 µC
