9397 750 13385 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet Rev. 02 — 31 August 2004 2 of 7
Philips Semiconductors
BAT18
Silicon planar diode
4. Marking
[1] * = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China.
5. Limiting values
6. Thermal characteristics
[1] Device mounted on a FR4 printed-circuit board.
7. Characteristics
Table 3: Marking
Type number Marking code
[1]
BAT18 10*
Table 4: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
R
continuous reverse voltage - 35 V
I
F
continuous forward current - 100 mA
T
stg
storage temperature −55 +125 °C
T
j
junction temperature - 125 °C
Table 5: Thermal characteristics
T
j
= 25
°
C unless otherwise specified.
Symbol Parameter Conditions Typ Unit
R
th(j-tp)
thermal resistance from junction to tie-point 330 K/W
R
th(j-a)
thermal resistance from junction to ambient
[1]
500 K/W
Table 6: Electrical characteristics
Symbol Parameter Conditions Min Typ Max Unit
V
F
forward voltage I
F
= 100 mA; see Figure 1 - - 1.2 V
I
R
reverse current see Figure 2
V
R
= 20 V - - 100 nA
V
R
= 20 V; T
j
=60°C --1µA
C
d
diode capacitance V
R
= 20 V; f = 1 MHz; see Figure 3 - 0.8 1.0 pF
r
D
diode forward
resistance
I
F
= 5 mA; f = 200 MHz; see Figure 4 - 0.5 0.7 Ω
