32 EE-SX1108 Photomicrosensor (Transmissive)
Photomicrosensor (Transmissive)
EE-SX1108
■ Dimensions
Note: All units are in millimeters unless otherwise indicated.
■ Features
• Ultra-compact with a 5-mm-wide sensor and a 2-mm-wide slot.
• PCB surface mounting type.
• High resolution with a 0.3-mm-wide aperture.
■ Absolute Maximum Ratings (Ta = 25°C)
Note: 1. Refer to the temperature rating chart if the ambient temper-
ature exceeds 25°C.
2. Duty: 1/100; Pulse width: 0.1 ms
3. Complete soldering within 10 seconds for reflow soldering
and within 3 seconds for manual soldering.
■ Electrical and Optical Characteristics (Ta = 25°C)
Internal Circuit
Terminal No. Name
A Anode
K Cathode
C Collector
E Emitter
Cross section AA
Optical
axis
Recommended
Soldering Pattern
Unless otherwise specified, the
tolerances are ±0.15 mm.
Item Symbol Rated value
Emitter Forward current I
F
25 mA
(see note 1)
Pulse forward cur-
rent
I
FP
100 mA
(see note 2)
Reverse voltage V
R
5 V
Detector Collector–Emitter
voltage
V
CEO
20 V
Emitter–Collector
voltage
V
ECO
5 V
Collector current I
C
20 mA
Collector dissipa-
tion
P
C
75 mW
(see note 1)
Ambient tem-
perature
Operating Topr –30°C to 85°C
Storage Tstg –40°C to 90°C
Reflow soldering Tsol 255°C
(see note 3)
Manual soldering Tsol 350°C
(see note 3)
Item Symbol Value Condition
Emitter Forward voltage V
F
1.1 V typ., 1.3 V max. I
F
= 5 mA
Reverse current I
R
10 μA max. V
R
= 5 V
Peak emission wavelength λ
P
940 nm typ. I
F
= 20 mA
Detector Light current I
L
50 μA min., 150 μA typ.,
500 μA max.
I
F
= 5 mA, V
CE
= 5 V
Dark current I
D
100 nA max. V
CE
= 10 V, 0 lx
Leakage current I
LEAK
--- ---
Collector–Emitter saturated voltage V
CE
(sat) 0.1 V typ., 0.4 V max. I
F
= 20 mA, I
L
= 50 μA
Peak spectral sensitivity wavelength λ
P
900 nm typ. ---
Rising time tr 10 μs typ. V
CC
= 5 V, R
L
= 1 kΩ,
I
L
= 100 μA
Falling time tf 10 μs typ. V
CC
= 5 V, R
L
= 1 kΩ,
I
L
= 100 μA
Be sure to read Precautions on page 24.
