IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFK200N10P
IXFX200N10P
Symbol Test Conditions Characteristic Values
(T
J
= 25C, unless otherwise specified) Min. Typ. Max.
g
fs
V
DS
= 10V, I
D
= 60A, Note 1 60 97 S
C
iss
7600 pF
C
oss
V
GS
= 0V, V
DS
= 25V, f = 1MHz 2900 pF
C
rss
860 pF
t
d(on)
30 ns
t
r
35 ns
t
d(off)
150 ns
t
f
90 ns
Q
g(on)
235 nC
Q
gs
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
50 nC
Q
gd
135 nC
R
thJC
0.18 C/W
R
thCS
0.15 C/W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(T
J
= 25C, unless otherwise specified) Min. Typ. Max.
I
S
V
GS
= 0V 200 A
I
SM
Repetitive, pulse width limited by T
JM
400 A
V
SD
I
F
= I
S
, V
GS
= 0V, Note 1 1.5 V
t
rr
150 ns
I
RM
6.0 A
Q
RM
0.4 μC
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Note: 1. Pulse test, t 300s; duty cycle, d 2%.
Resistive Switching Times
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 60A
R
G
= 3.3 (External)
I
F
= 25A, -di/dt = 100A/s,
V
R
=
50V, V
GS
= 0V
Terminals: 1 - Gate
2,4 - Drain
3 - Source
PLUS 247
TM
Outline
TO-264 Outline
Terminals: 1 = Gate
2,4 = Drain
3 = Source
b
Q
D
R
E
A
S
R1
x2
b2
b1
L1
31 2
L
c
e
4
0P
e
Q1
1 2 3
4
b
C
L
D
R
Q
E
A
A1
L1
D2
D1
E1
A2
b2 2 PLCS
3 PLCS
2 PLCS
b4
A1
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