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MSA-1110

P1-P3P4-P4
MSA-1110
Cascadable Silicon Bipolar MMIC Amplier
Data Sheet
Features
•
High Dynamic Range Cascadable 50Ω or 75Ω Gain Block
•
3 dB Bandwidth: 50 MHz to 1.6 GHz
•
17.5 dBm Typical P
1 dB
at 0.5 GHz
•
12 dB Typical 50 Ω Gain at 0.5 GHz
•
3.5 dB Typical Noise Figure at 0.5 GHz
•
Hermetic Gold-ceramic Microstrip Package
100 mil Package Typical Biasing Conguration
C
block
C
block
R
bias
V
CC
>
8
V
V
d
= 5.5 V
RFC (Optional)
IN OUT
MSA
4
1
2
3
Description
The MSA-1110 is a high performance silicon bipolar
Monolithic Microwave Integrated Circuit (MMIC) housed
in a hermetic high reliability package. This MMIC is
designed for high dynamic range in either 50 or 75Ω
systems by combining low noise gure with high IP
3
.
Typical applications include narrow and broadband linear
ampliers in industrial and military systems.
The MSA-series is fabricated using Avago’s 10 GHz
f
T
, 25 GHz f
MAX
silicon bipolar MMIC process which
uses nitride self-alignment, ion implantation, and
gold metallization to achieve excellent performance,
uniformity and reliability. The use of an external bias
resistor for temperature and current stability also allows
bias exibility.
IFD-53010 pkg
2
MSA-1110 Absolute Maximum Ratings
Parameter Absolute Maximum
[1]
Device Current 90 mA
Power Dissipation
[2,3]
560 mW
RF Input Power +13 dBm
Junction Temperature 200°C
Storage Temperature –65 to 200°C
Thermal Resistance
[2, 4]
:
θ
jc
= 135°C/W
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. T
CASE
= 25°C.
3. Derate at 7.4 mW/°C for T
C
> 124°C.
4. The small spot size of this technique results in a higher, though more accurate determination
of θ
jc
than do alternate methods.
G
P
Power Gain (|S
21
|
2
) f = 0.1 GHz dB 11.5 12.5 13.5
∆G
P
Gain Flatness f = 0.1 to 1.0 GHz dB ±0.7 ±1.0
f
3 dB
3 dB Bandwidth
[2]
GHz 1.6
Input VSWR f = 0.1 to 1.0 GHz 1.7:1
Output VSWR f = 0.1 to 1.0 GHz 1.9:1
NF 50 Ω Noise Figure f = 0.5 GHz dB 3.5 4.5
P
1 dB
Output Power at 1 dB Gain Compression f = 0.5 GHz dBm 16.0 17.5
IP
3
Third Order Intercept Point f = 0.5 GHz dBm 30.0
t
D
Group Delay f = 0.5 GHz psec 160
V
d
Device Voltage V 4.5 5.5 6.5
dV/dT Device Voltage Temperature Coecient mV/°C –8.0
Notes:
1. The recommended operating current range for this device is 40 to 75 mA.
Typical performance as a function of current is on the following page.
2. Referenced from 50 MHz gain (GP).
Electrical Specications
[1]
, T
A
= 25°C
Symbol Parameters and Test Conditions: I
d
= 60 mA, Z
O
= 50 Ω Units Min. Typ. Max.
VSWR
3
MSA-1110 Typical Scattering Parameters (Z
O
= 50 Ω, T
A
= 25°C, I
d
= 60 mA)
Freq. S
11
S
21
S
12
S
22
GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang k
.0005 .83 –7 19.5 9.44 176 –31.9 .025 39 .84 –7 0.77
.005 .54 –50 16.8 6.92 158 –18.7 .116 34 .55 –50 0.60
.025 .15 –78 13.0 4.47 167 –16.6 .148 9 .15 –79 1.03
.050 .10 –64 12.6 4.26 171 –16.5 .149 5 .10 –67 1.08
.100 .08 –63 12.5 4.23 171 –16.5 .150 4 .08 –66 1.09
.200 .09 –74 12.4 4.17 166 –16.4 .152 4 .09 –78 1.09
.300 .11 –85 12.3 4.10 160 –16.2 .154 5 .12 –89 1.07
.400 .13 –94 12.3 4.10 154 –16.1 .157 6 .15 –98 1.05
.500 .16 –102 12.1 4.04 148 –15.9 .161 7 .18 –106 1.02
.600 .18 –108 12.0 3.98 143 –15.6 .165 8 .20 –113 1.00
.700 .21 –114 11.8 3.89 137 –15.4 .169 8 .23 –120 0.97
.800 .23 –120 11.6 3.80 131 –15.2 .173 8 .25 –126 0.95
.900 .25 –126 11.4 3.71 126 –15.0 .178 8 .28 –132 0.92
1.000 .27 –131 11.1 3.60 120 –14.8 .182 8 .30 –137 0.91
1.500 .36 –153 9.8 3.10 96 –13.8 .203 4 .37 –160 0.83
2.000 .42 –171 8.4 2.64 74 –13.3 .217 1 .40 –178 0.82
2.500 .47 177 7.2 2.29 59 –12.5 .236 –2 .41 172 0.80
3.000 .47 159 5.9 1.97 43 –13.2 .220 –10 .38 157 0.95
Typical Performance, T
A
= 25°C, Z
O
= 50 Ω
(unless otherwise noted)
G
p
(dB)
0.1.02 .05 0.5 1.0 2.0 3.0
FREQUENCY (GHz)
Figure 1. Typical Power Gain vs. Frequency,
I
d
= 60 mA.
4020 60 80
I
d
(mA)
Figure 3. Power Gain vs. Current.
0
2
4
6
8
10
14
12
16
4
6
8
12
10
14
G
p
(dB)
Figure 4. Output Power at 1 dB Gain Compression,
Noise Figure and Power Gain vs. Case Temperature,
f = 0.5 GHz, I
d
= 60 mA.
3
4
5
11
13
12
16
17
18
–55 +25 +125
P
1 dB
(dBm)
NF (dB)
Gp (dB)
TEMPERATURE (C)
G
P
1.0 GHz,
P
1 dB
NF
20 4 6 8
V
d
(V)
Figure 2. Device Current vs. Voltage.
0
20
40
60
100
80
I
d
(mA)
T
C
= +125C
T
C
= +25C
T
C
= –55C
FREQUENCY (GHz)
Figure 5. Output Power at 1 dB Gain Compression
vs. Frequency.
FREQUENCY (GHz)
Figure 6. Noise Figure vs. Frequency.
3.5
3.0
4.0
4.5
5.0
NF (dB)
0.1 0.2 0.3 0.5 2.01.0 0.1 0.2 0.3 0.5 2.01.0
12
14
16
18
22
20
P
1 dB
(dBm)
I
d
= 75 mA
I
d
= 75 mA
I
d
= 60 mA
I
d
= 40 mA
I
d
= 60 mA
I
d
= 40 mA
Z
O
= 50
Z
O
= 75
2.0 GHz
0.1 GHz
0.5 GHz
1.0 GHz
P1-P3P4-P4

MSA-1110

Mfr. #:
Buy MSA-1110
Manufacturer:
Broadcom / Avago
Description:
RF Amplifier 6.5 SV 12 dB
Lifecycle:
New from this manufacturer.
Delivery:
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