MMBTA42,215

Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
application markets
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use
the references to Nexperia, as shown below.
Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/,
use http://www.nexperia.com
Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use
salesaddresses@nexperia.com (email)
Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
the version, as shown below:
- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
Should be replaced with:
- © Nexperia B.V. (year). All rights reserved.
If you have any questions related to the data sheet, please contact our nearest sales office via e-mail
or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and
understanding,
Kind regards,
Team Nexperia
DATA SHEET
Product specification 2000 Apr 11
DISCRETE SEMICONDUCTORS
MMBTA42
NPN high-voltage transistor
k
, halfpage
M3D088
2000 Apr 11 2
Philips Semiconductors Product specification
NPN high-voltage transistor MMBTA42
FEATURES
Low current (max. 100 mA)
High voltage (max. 300 V).
APPLICATIONS
Telephony
Professional communication equipment.
DESCRIPTION
NPN high-voltage transistor in a SOT23 plastic package.
PNP complement: MMBTA92.
MARKING
Note
1. = p: made in Hong Kong.
= t: made in Malaysia.
PINNING
TYPE NUMBER MARKING CODE
(1)
MMBTA42 7D
PIN DESCRIPTION
1 base
2 emitter
3 collector
handbook, halfpage
21
3
MAM255
Top view
2
3
1
Fig.1 Simplified outline (SOT23) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter 300 V
V
CEO
collector-emitter voltage open base 300 V
V
EBO
emitter-base voltage open collector 6V
I
C
collector current (DC) 100 mA
I
CM
peak collector current 200 mA
I
BM
peak base current 100 mA
P
tot
total power dissipation T
amb
25 °C; note 1 250 mW
T
stg
storage temperature 65 +150 °C
T
j
junction temperature 150 °C
T
amb
operating ambient temperature 65 +150 °C

MMBTA42,215

Mfr. #:
Manufacturer:
Nexperia
Description:
Bipolar Transistors - BJT TRANS SW TAPE-7
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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