2N3904RL1G Datasheet 2N3904RLRMG, 2N3904G, 2N3904RLRPG | P1-P3

August, 2012 − Rev. 8

1 Publication Order Number:

2N3903/D

2N3903, 2N3904

General Purpose

Transistors

NPN Silicon

Features

• Pb−Free Packages are Available*

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector−Emitter Voltage V

CEO

40 Vdc

Collector−Base Voltage V

CBO

60 Vdc

Emitter−Base Voltage V

EBO

6.0 Vdc

Collector Current − Continuous I

C

200 mAdc

Total Device Dissipation

@ T

A

= 25°C

Derate above 25°C

P

D

625

5.0

mW

mW/°C

Total Device Dissipation

@ T

C

= 25°C

Derate above 25°C

P

D

1.5

12

W

mW/°C

Operating and Storage Junction

Temperature Range

T

J

, T

stg

−55 to +150 °C

THERMAL CHARACTERISTICS (Note 1)

Characteristic Symbol Max Unit

Thermal Resistance, Junction−to−Ambient

R

q

JA

200 °C/W

Thermal Resistance, Junction−to−Case

R

q

JC

83.3 °C/W

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Indicates Data in addition to JEDEC Requirements.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

MARKING DIAGRAMS

http://onsemi.com

See detailed ordering and shipping information in the package

dimensions section on page 3 of this data sheet.

ORDERING INFORMATION

COLLECTOR

3

2

BASE

1

EMITTER

2N

390x

YWWG

G

x = 3 or 4

Y = Year

WW = Work Week

G = Pb−Free Package

(Note: Microdot may be in either location)

1

2

3

1

2

BENT LEAD

TAPE & REEL

AMMO PACK

STRAIGHT LEAD

BULK PACK

3

TO−92

CASE 29

STYLE 1

2N3903, 2N3904

http://onsemi.com

2

ELECTRICAL CHARACTERISTICS (T

A

= 25°C unless otherwise noted)

Characteristic

Symbol Min Max Unit

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage (Note 2)

(I

C

= 1.0 mAdc, I

B

= 0) V

(BR)CEO

40 − Vdc

Collector−Base Breakdown Voltage (I

C

= 10 mAdc, I

E

= 0)

V

(BR)CBO

60 − Vdc

Emitter−Base Breakdown Voltage (I

E

= 10 mAdc, I

C

= 0)

V

(BR)EBO

6.0 − Vdc

Base Cutoff Current (V

CE

= 30 Vdc, V

EB

= 3.0 Vdc) I

BL

− 50 nAdc

Collector Cutoff Current (V

CE

= 30 Vdc, V

EB

= 3.0 Vdc) I

CEX

− 50 nAdc

ON CHARACTERISTICS

DC Current Gain (Note 2)

(I

C

= 0.1 mAdc, V

CE

= 1.0 Vdc) 2N3903

2N3904

(I

C

= 1.0 mAdc, V

CE

= 1.0 Vdc) 2N3903

2N3904

(I

C

= 10 mAdc, V

CE

= 1.0 Vdc) 2N3903

2N3904

(I

C

= 50 mAdc, V

CE

= 1.0 Vdc) 2N3903

2N3904

(I

C

= 100 mAdc, V

CE

= 1.0 Vdc) 2N3903

2N3904

h

FE

20

40

35

70

50

100

30

60

15

30

−

150

300

−

Collector−Emitter Saturation Voltage (Note 2)

(I

C

= 10 mAdc, I

B

= 1.0 mAdc)

(I

C

= 50 mAdc, I

B

= 5.0 mAdc

V

CE(sat)

−

0.2

0.3

Vdc

Base −Emitter Saturation Voltage (Note 2)

(I

C

= 10 mAdc, I

B

= 1.0 mAdc)

(I

C

= 50 mAdc, I

B

= 5.0 mAdc)

V

BE(sat)

0.65

−

0.85

0.95

Vdc

SMALL−SIGNAL CHARACTERISTICS

Current−Gain − Bandwidth Product

(I

C

= 10 mAdc, V

CE

= 20 Vdc, f = 100 MHz) 2N3903

2N3904

f

T

250

300

−

MHz

Output Capacitance (V

CB

= 5.0 Vdc, I

E

= 0, f = 1.0 MHz) C

obo

− 4.0 pF

Input Capacitance (V

EB

= 0.5 Vdc, I

C

= 0, f = 1.0 MHz) C

ibo

− 8.0 pF

Input Impedance

(I

C

= 1.0 mAdc, V

CE

= 10 Vdc, f = 1.0 kHz) 2N3903

2N3904

h

ie

1.0

8.0

10

k W

Voltage Feedback Ratio

(I

C

= 1.0 mAdc, V

CE

= 10 Vdc, f = 1.0 kHz) 2N3903

2N3904

h

re

0.1

0.5

5.0

8.0

X 10

− 4

Small−Signal Current Gain

(I

C

= 1.0 mAdc, V

CE

= 10 Vdc, f = 1.0 kHz) 2N3903

2N3904

h

fe

50

100

200

400

−

Output Admittance (I

C

= 1.0 mAdc, V

CE

= 10 Vdc, f = 1.0 kHz) h

oe

1.0 40

mmhos

Noise Figure

(I

C

= 100 mAdc, V

CE

= 5.0 Vdc, R

S

= 1.0 k W, f = 1.0 kHz) 2N3903

2N3904

NF

−

6.0

5.0

dB

SWITCHING CHARACTERISTICS

Delay Time

(V

CC

= 3.0 Vdc, V

BE

= 0.5 Vdc,

I

C

= 10 mAdc, I

B1

= 1.0 mAdc)

t

d

− 35 ns

Rise Time t

r

− 35 ns

Storage Time

(V

CC

= 3.0 Vdc, I

C

= 10 mAdc, 2N3903

I

B1

= I

B2

= 1.0 mAdc) 2N3904

t

s

−

175

200

ns

Fall Time t

f

− 50 ns

2. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2%.

2N3903, 2N3904

http://onsemi.com

3

ORDERING INFORMATION

Device Package Shipping

†

2N3903RLRM TO−92 2000 / Ammo Pack

2N3904 TO−92 5000 Units / Bulk

2N3904G TO−92

(Pb−Free)

5000 Units / Bulk

2N3904RLRA TO−92 2000 / Tape & Reel

2N3904RLRAG TO−92

(Pb−Free)

2000 / Tape & Reel

2N3904RLRM TO−92 2000 / Ammo Pack

2N3904RLRMG TO−92

(Pb−Free)

2000 / Ammo Pack

2N3904RLRP TO−92 2000 / Ammo Pack

2N3904RLRPG TO−92

(Pb−Free)

2000 / Ammo Pack

2N3904RL1G TO−92

(Pb−Free)

2000 / Tape & Reel

2N3904ZL1 TO−92 2000 / Ammo Pack

2N3904ZL1G TO−92

(Pb−Free)

2000 / Ammo Pack

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

Figure 1. Delay and Rise Time Equivalent Test Circuit

Figure 2. Storage and Fall Time Equivalent Test Circuit

+3 V

275

10 k

1N916

C

S

< 4 pF*

+3 V

275

10 k

C

S

< 4 pF*

< 1 ns

-0.5 V

+10.9 V

300 ns

DUTY CYCLE = 2%

< 1 ns

-9.1 V′

+10.9 V

DUTY CYCLE = 2%

t

1

0

10 < t

1

< 500 ms

* Total shunt capacitance of test jig and connectors

2N3904RL1G

2N3904RL1G

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