PMEG3020ER_1 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 01 — 29 December 2008 7 of 13
NXP Semiconductors
PMEG3020ER
2 A low V
F
MEGA Schottky barrier rectifier
T
j
= 150 °C
(1) δ = 0.1
(2) δ = 0.2
(3) δ = 0.5
(4) δ =1
T
j
= 125 °C
(1) δ =1
(2) δ = 0.9
(3) δ = 0.8
(4) δ = 0.5
Fig 7. Average forward power dissipation as a
function of average forward current; typical
values
Fig 8. Average reverse power dissipation as a
function of reverse voltage; typical values
FR4 PCB, standard footprint
T
j
= 150 °C
(1) δ = 1; DC
(2) δ = 0.5; f = 20 kHz
(3) δ = 0.2; f = 20 kHz
(4) δ = 0.1; f = 20 kHz
FR4 PCB, mounting pad for cathode 1 cm
2
T
j
= 150 °C
(1) δ = 1; DC
(2) δ = 0.5; f = 20 kHz
(3) δ = 0.2; f = 20 kHz
(4) δ = 0.1; f = 20 kHz
Fig 9. Average forward current as a function of
ambient temperature; typical values
Fig 10. Average forward current as a function of
ambient temperature; typical values
006aab290
I
F(AV)
(A)
0321
0.5
0.25
0.75
1
P
F(AV)
(W)
0
(1)
(2)
(3)
(4)
006aab291
V
R
(V)
0302010
4
2
6
8
P
R(AV)
(W)
0
(1)
(2)
(3)
(4)
T
amb
(°C)
0 50 100 150 1751257525
006aab292
1
2
3
I
F(AV)
(A)
0
(1)
(2)
(3)
(4)
T
amb
(°C)
0 50 100 150 1751257525
006aab293
1
2
3
I
F(AV)
(A)
0
(1)
(2)
(3)
(4)
