NTLJD3115PT1G

© Semiconductor Components Industries, LLC, 2013
August, 2016 Rev. 7
1 Publication Order Number:
NTLJD3115P/D
NTLJD3115P
Power MOSFET
20 V, 4.1 A, Dual PChannel, 2x2 mm
WDFN Package
Features
WDFN Package Provides Exposed Drain Pad for Excellent Thermal
Conduction
2x2 mm Footprint Same as SC88
Lowest R
DS(on)
Solution in 2x2 mm Package
1.8 V R
DS(on)
Rating for Operation at Low Voltage Gate Drive Logic
Level
Low Profile (< 0.8 mm) for Easy Fit in Thin Environments
Bidirectional Current Flow with Common Source Configuration
This is a PbFree Device
Applications
Optimized for Battery and Load Management Applications in
Portable Equipment
LiIon Battery Charging and Protection Circuits
High Side Load Switch
MAXIMUM RATINGS (T
J
= 25°C unless otherwise noted)
Parameter Symbol Value Unit
DraintoSource Voltage V
DSS
20 V
GatetoSource Voltage V
GS
±8.0 V
Continuous Drain
Current (Note 1)
Steady
State
T
A
= 25°C
I
D
3.3
A
T
A
= 85°C 2.4
t 5 s T
A
= 25°C 4.1
Power Dissipation
(Note 1)
Steady
State
T
A
= 25°C
P
D
1.5
W
t 5 s 2.3
Continuous Drain
Current (Note 2)
Steady
State
T
A
= 25°C
I
D
2.3
A
T
A
= 85°C 1.6
Power Dissipation
(Note 2)
T
A
= 25°C
P
D
0.71 W
Pulsed Drain Current
t
p
= 10 ms
I
DM
20 A
Operating Junction and Storage Temperature T
J
, T
STG
55 to
150
°C
Source Current (Body Diode) (Note 2) I
S
1.9 A
Lead Temperature for Soldering Purposes
(1/8 from case for 10 s)
T
L
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq
[2 oz] including traces).
2. Surface Mounted on FR4 Board using the minimum recommended pad size
of 30 mm
2
, 2 oz Cu.
www.onsemi.com
20 V
135 mW @ 2.5 V
100 mW @ 4.5 V
R
DS(on)
MAX
4.1 A
I
D
MAX (Note 1)V
(BR)DSS
200 mW @ 1.8 V
G1
S1
PCHANNEL MOSFET
D1
JD = Specific Device Code
M = Date Code
G = PbFree Package
(Note: Microdot may be in either location)
JDMG
G
1
2
3
6
5
4
WDFN6
CASE 506AN
MARKING
DIAGRAM
Device Package Shipping
ORDERING INFORMATION
NTLJD3115PT1G WDFN6
(PbFree)
3000/Tape & Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
D2
D1
Pin 1
G2
S2
PCHANNEL MOSFET
D2
1
2
3
6
5
4
S1
G1
D2
D1
G2
S2
(Top View)
PIN CONNECTIONS
D1
D2
NTLJD3115PTAG WDFN6
(PbFree)
3000/Tape & Reel
NTLJD3115P
www.onsemi.com
2
THERMAL RESISTANCE RATINGS
Parameter Symbol Max Unit
SINGLE OPERATION (SELFHEATED)
JunctiontoAmbient – Steady State (Note 3)
R
q
JA
83
°C/W
JunctiontoAmbient – Steady State Min Pad (Note 4)
R
q
JA
177
JunctiontoAmbient – t 5 s (Note 3)
R
q
JA
54
DUAL OPERATION (EQUALLY HEATED)
JunctiontoAmbient – Steady State (Note 3)
R
q
JA
58
°C/W
JunctiontoAmbient – Steady State Min Pad (Note 4)
R
q
JA
133
JunctiontoAmbient – t 5 s (Note 3)
R
q
JA
40
3. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces).
4. Surface Mounted on FR4 Board using the minimum recommended pad size (30 mm
2
, 2 oz Cu).
NTLJD3115P
www.onsemi.com
3
MOSFET ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise noted)
Parameter
Symbol Test Conditions Min Typ Max Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 250 mA
20 V
DraintoSource Breakdown Voltage
Temperature Coefficient
V
(BR)DSS
/T
J
I
D
= 250 mA, Ref to 25°C
9.95 mV/°C
Zero Gate Voltage Drain Current I
DSS
V
DS
= 16 V, V
GS
= 0 V
T
J
= 25°C 1.0 m A
T
J
= 85°C 10
GatetoSource Leakage Current I
GSS
V
DS
= 0 V, V
GS
= ±8.0 V ±100 nA
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250 mA
0.4 0.7 1.0 V
Negative Gate Threshold
Temperature Coefficient
V
GS(TH)
/T
J
2.44 mV/°C
DraintoSource OnResistance R
DS(on)
V
GS
= 4.5, I
D
= 2.0 A 75 100 mW
V
GS
= 2.5, I
D
= 2.0 A 101 135
V
GS
= 1.8, I
D
= 1.6 A 150 200
Forward Transconductance g
FS
V
DS
= 5.0 V, I
D
= 2.0 A 6.0 S
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
C
ISS
V
GS
= 0 V, f = 1.0 MHz,
V
DS
= 10 V
531
pF
Output Capacitance C
OSS
91
Reverse Transfer Capacitance C
RSS
56
Total Gate Charge Q
G(TOT)
V
GS
= 4.5 V, V
DS
= 10 V,
I
D
= 2.0 A
5.5 6.2
nC
Threshold Gate Charge Q
G(TH)
0.7
GatetoSource Charge Q
GS
1.0
GatetoDrain Charge Q
GD
1.4
Gate Resistance R
G
8.8
W
SWITCHING CHARACTERISTICS (Note 6)
TurnOn Delay Time
t
d(ON)
V
GS
= 4.5 V, V
DD
= 5.0 V,
I
D
= 1.0 A, R
G
= 6.0 W
6.0
ns
Rise Time t
r
11
TurnOff Delay Time t
d(OFF)
21
Fall Time t
f
8.0
TurnOn Delay Time t
d(ON)
V
GS
= 4.5 V, V
DD
= 10 V,
I
D
= 2.0 A, R
G
= 2.0 W
6.0
ns
Rise Time t
r
12
TurnOff Delay Time t
d(OFF)
19
Fall Time t
f
6.0
DRAINSOURCE DIODE CHARACTERISTICS
Forward Recovery Voltage
V
SD
V
GS
= 0 V, IS = 1.0 A
T
J
= 25°C 0.75 1.0
V
T
J
= 125°C 0.64
Reverse Recovery Time t
RR
V
GS
= 0 V, d
ISD
/d
t
= 100 A/ms,
I
S
= 1.0 A
12.6
ns
Charge Time t
a
7.0
Discharge Time t
b
5.6
Reverse Recovery Time Q
RR
5.0 nC
5. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.

NTLJD3115PT1G

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
MOSFET PFET 2X2 20V 4.1A 106MOHM
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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