CDBFR0240-HF
SMD Schottky Barrier Diode
Page 1
QW-G1075
REV:B
Comchip Technology CO., LTD.
Io = 200 mA
RoHS Device
Halogen Free
VR = 40 Volts
Features
- Designed for mounting on small surface.
- Extremely thin / leadless package.
- Majority carrier conduction.
Mechanical data
- Case: 1005/SOD-323F standard package,
molded plastic.
- Terminals: Gold plated, solderable per
MIL-STD-750,method 2026
- Polarity: Indicated by cathode band.
- Weight: 0.006 grams(approx.).
- Mounting position: Any
Circuit Diagram
O
Maximum Rating (at TA=25 C unless otherwise noted)
Symbol
Typ
Parameter
Conditions Min
Max
Unit
Electrical Characteristics ( )
O
at TA=25 C unless otherwise noted
9
CT
Capacitance between terminals
pF
F = 1 MHZ and 10 VDC reverse voltage
Forward voltage
IF = 200 mA DC
VF
V
0.550.45
IR
uAReverse current
VR = 30V
10
1
Typ
VRRM
Repetitive peak reverse voltage
Symbol
Parameter
Conditions Min
Max
Unit
V
45
VR
Reverse voltage
V
40
IFSM
Forward current, surge peak
8.3 ms single half sine-wave superimposed
on rate load(JEDEC method)
3
PD
mW
O
C
250
+125-40
Power dissipation
Storage temperature
Tj
O
C
+125
Junction temperature
TSTG
A
IO
Average forward current
mA
200
Company reserves the right to improve product design , functions and reliability without notice.
0.102(2.60)
0.095(2.40)
0.051(1.30)
0.043(1.10)
0.035(0.90)
0.027(0.70)
Dimensions in inches and (millimeter)
1005/SOD-323F
0.041(1.05)
0.037(0.95)
0.024(0.60)
0.016(0.40)
