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Document Number: 69070
S10-1475-Rev. C, 05-Jul-10
Vishay Siliconix
SUP60N06-12P
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS T
J
= 25 °C, unless otherwise noted
Parameter Symbol Test Conditions Min. Typ. Max. Unit
Static
Drain-Source Breakdown Voltage
V
DS
V
DS
= 0 V, I
D
= 250 µA
60
V
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 µA
2.5 4.5
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
= ± 20 V
± 250 nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 60 V, V
GS
= 0 V
1
µA
V
DS
= 60 V, V
GS
= 0 V, T
J
= 125 °C
50
V
DS
= 60 V, V
GS
= 0 V, T
J
= 150 °C
250
On-State Drain Current
a
I
D(on)
V
DS
10 V, V
GS
= 10 V
80 A
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= 10 V, I
D
= 30 A
0.0098 0.012
V
GS
= 10 V, I
D
= 30 A, T
J
= 125 °C
0.0155 0.019
Forward Transconductance
a
g
fs
V
DS
= 15 V, I
D
= 15 A
37 S
Dynamic
b
Input Capacitance
C
iss
V
GS
= 0 V, V
DS
= 30 V, f = 1 MHz
1970
pFOutput Capacitance
C
oss
310
Reverse Transfer Capacitance
C
rss
110
Total Gate Charge
c
Q
g
V
DS
= 30 V, V
GS
= 10 V, I
D
= 20 A
33 55
nC
Gate-Source Charge
c
Q
gs
11
Gate-Drain Charge
c
Q
gd
9
Gate Resistance
R
g
f = 1 MHz 0.3 1.4 2.8
Tur n - O n De l ay Tim e
c
t
d(on)
V
DD
= 30 V, R
L
= 1.53
I
D
20 A, V
GEN
= 10 V, R
g
= 1
11 20
ns
Rise Time
c
t
r
11 20
Turn-Off Delay Time
c
t
d(off)
16 30
Fall Time
c
t
f
815
Source-Drain Diode Ratings and Characteristics T
C
= 25 °C
b
Continuous Current
I
S
60
A
Pulsed Current
I
SM
80
Forward Voltage
a
V
SD
I
F
= 10 A, V
GS
= 0 V
0.84 1.5 V
Reverse Recovery Time
t
rr
I
F
= 10 A, dI/dt = 100 A/µs
40 80 ns
Peak Reverse Recovery Current
I
RM(REC)
3.2 5.0 A
Reverse Recovery Charge
Q
rr
64 120 nC
