Characteristics STTH100W04C
2/8 Doc ID 023617 Rev 1
1 Characteristics
When diodes 1 and 2 are used simultaneously:
T
j
(diode 1) = P(diode 1) x R
th(j-c)
(per diode) + P(diode 2) x R
th(c)
To evaluate the conduction losses use the following equation:
P = 0.85 x I
F(AV)
+ 0.007 I
F
2
(RMS)
Table 2. Absolute ratings (limiting values, at 25 °C, unless otherwise specified,
per diode)
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage 400 V
I
F(RMS)
Forward rms current 75 A
I
F(AV)
Average forward current, = 0.5
T
c
= 120 °C Per diode 50
A
T
c
= 110°C Per device 100
I
FSM
Surge non repetitive forward current t
p
= 10 ms sinusoidal 350 A
T
stg
Storage temperature range -65 to + 175 °C
T
j
Maximum operating junction temperature + 175 °C
Table 3. Thermal resistance
Symbol Parameter Value Unit
R
th(j-c)
Junction to case
Per diode 0.7
°C / W
Total
0.4
R
th(c)
Coupling 0.1 °C / W
Table 4. Static electrical characteristics (per diode)
Symbol Parameter Test conditions Min. Typ Max. Unit
I
R
(1)
1. Pulse test: t
p
= 5 ms, < 2%
Reverse leakage current
T
j
= 25 °C
V
R
= V
RRM
25
µA
T
j
= 125 °C 25 250
V
F
(2)
2. Pulse test: t
p
= 380 µs, < 2%
Forward voltage drop
T
j
= 25 °C
I
F
= 50A
1.45
V
T
j
= 150 °C 0.98 1.20
T
j
= 25 °C
I
F
= 100 A
1.75
T
j
= 150 °C 1.25 1.55