STTH100W04CW

This is information on a product in full production.
October 2012 Doc ID 023617 Rev 1 1/8
8
STTH100W04C
Turbo 2 ultrafast high voltage rectifier
Datasheet production data
Features
Ultrafast switching
Low reverse recovery current
Low thermal resistance
Reduces switching losses
ECOPACK
®
2 compliant component
Ribbon bonding for more robustness
Description
The STTH100W04CW, uses ST Turbo 2, 400 V
technology. It is especially suited to be used for
DC/DC and DC/AC converters in secondary stage
of MIG/MMA/TIG welding machine. Housed in
ST's TO-247, this device offers high power
integration for all welding machines and industrial
applications.
Table 1. Device summary
Symbol Value
I
F(AV)
2 x 50 A
V
RRM
400 V
t
rr
(typ) 35 ns
T
j
(max) 175 °C
V
F
(typ) 0.98 V
A1
K
A2
A1
K
A2
A1
A2
K
TO-247
STTH100W04CW
www.st.com
Characteristics STTH100W04C
2/8 Doc ID 023617 Rev 1
1 Characteristics
When diodes 1 and 2 are used simultaneously:
T
j
(diode 1) = P(diode 1) x R
th(j-c)
(per diode) + P(diode 2) x R
th(c)
To evaluate the conduction losses use the following equation:
P = 0.85 x I
F(AV)
+ 0.007 I
F
2
(RMS)
Table 2. Absolute ratings (limiting values, at 25 °C, unless otherwise specified,
per diode)
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage 400 V
I
F(RMS)
Forward rms current 75 A
I
F(AV)
Average forward current, = 0.5
T
c
= 120 °C Per diode 50
A
T
c
= 110°C Per device 100
I
FSM
Surge non repetitive forward current t
p
= 10 ms sinusoidal 350 A
T
stg
Storage temperature range -65 to + 175 °C
T
j
Maximum operating junction temperature + 175 °C
Table 3. Thermal resistance
Symbol Parameter Value Unit
R
th(j-c)
Junction to case
Per diode 0.7
°C / W
Total
0.4
R
th(c)
Coupling 0.1 °C / W
Table 4. Static electrical characteristics (per diode)
Symbol Parameter Test conditions Min. Typ Max. Unit
I
R
(1)
1. Pulse test: t
p
= 5 ms, < 2%
Reverse leakage current
T
j
= 25 °C
V
R
= V
RRM
25
µA
T
j
= 125 °C 25 250
V
F
(2)
2. Pulse test: t
p
= 380 µs, < 2%
Forward voltage drop
T
j
= 25 °C
I
F
= 50A
1.45
V
T
j
= 150 °C 0.98 1.20
T
j
= 25 °C
I
F
= 100 A
1.75
T
j
= 150 °C 1.25 1.55
STTH100W04C Characteristics
Doc ID 023617 Rev 1 3/8
Table 5. Dynamic electrical characteristics (per diode)
Symbol Parameter Test conditions Min. Typ Max. Unit
I
RM
Reverse recovery current
T
j
= 125 °C
I
F
= 50 A, V
R
= 320 V
dI
F
/dt = -200 A/µs
15 20 A
Q
RR
Reverse recovery charge 850 nC
S
factor
Softness factor 0.3
t
rr
Reverse recovery time T
j
= 25 °C
I
F
= 1 A, V
R
= 30 V
dI
F
/dt = -100 A/µs
35 50 ns
t
fr
Forward recovery time T
j
= 25 °C
I
F
= 50 A, V
FR
= 1.4 V
dI
F
/dt = 200 A/µs
500 ns
V
FP
Forward recovery voltage T
j
= 25 °C 2 3 V
Figure 1. Average forward power dissipation
versus average forward current
(per diode)
Figure 2. Forward voltage drop versus
forward current (per diode)
P (W)
F(AV)
0
10
20
30
40
50
60
70
80
90
0 10203040506070
δ = 0.05
δ1= 0.
δ = 0.2
δ = 0.5
δ = 1
= tp/T
tp
T
δ
I
F(AV)
(A)
I
FM
(A)
0.1
1.0
10.0
100.0
1000.0
0.0 0.4 0.8 1.2 1.6 2.0 2.4
T
j
=150°C
(Maximum values)
T
j
=150 °C
(Typical values)
T
j
=25 °C
(Maximum values)
V
FM
(V)
Figure 3. Relative variation of thermal
impedance junction to case versus
pulse duration
Figure 4. Peak reverse recovery current
versus dI
F
/dt (typical values, per
diode)
Z
th(j-c)
/R
th(j-c)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-04 1.E-03 1.E-02 1.E-01 1.E+00
Single pulse
t
p
(s)
I
RM
(A)
0
5
10
15
20
25
30
35
0 50 100 150 200 250 300 350 400 450 500
I
F
=I
F(AV)
V
R
=320 V
T
j
=125 °C
dI
F
/dt(A/µs)

STTH100W04CW

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
Rectifiers Turbo 2 ultrafast 2X50A 400V 0.98VF
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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