ICS810252BYI-03 REVISION A AUGUST 20, 2009 6 ©2009 Integrated Device Technology, Inc.
ICS810252BI-03 Data Sheet VCXO JITTER ATTENUATOR & FEMTOCLOCK™ MULTIPLIER
TABLE 4A. POWER SUPPLY DC CHARACTERISTICS, V
DD
= V
DDO_QA
= V
DDO_QB
= V
DDX
= 3.3V±5%, TA = -40°C TO 85°C
TABLE 4B. LVCMOS / LVTTL DC CHARACTERISTICS, V
DD
= V
DDO_QA
= V
DDO_QB
= 3.3V±5%, TA = -40°C TO 85°C
NOTE 1: Outputs terminated with 50Ω to V
DDO_QA,_QB
/2.
ABSOLUTE MAXIMUM RATINGS
Supply Voltage, V
DD
4.6V
Inputs, V
I
-0.5V to V
DD
+ 0.5V
Outputs, V
O
-0.5V to V
DDO
+ 0.5V
Package Thermal Impedance, θ
JA
32 Lead VFQFN 37°C/W (0 mps)
32 Lead TQFP 32.2°C/W (0 mps)
Storage Temperature, T
STG
-65°C to 150°C
NOTE: Stresses beyond those listed under Absolute
Maximum Ratings may cause permanent damage to the
device. These ratings are stress specifications only. Functional op-
eration of product at these conditions or any conditions beyond
those listed in the
DC Characteristics
or
AC Characteristics
is not
implied. Exposure to absolute maximum rating conditions for ex-
tended periods may affect product reliability.
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V
DD
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V
ADD
egatloVylppuSgolanAV
DD
31.0–3.3V
DD
V
V
,AQ_ODD
V
BQ_ODD
egatloVylppuStuptuO531.33.3564.3V
V
XDD
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I
DD
I+
XDD
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tnerruCylppuS
091Am
I
ADD
tnerruCylppuSgolanA 31Am
I
AQ_ODD
I+
BQ_ODD
tnerruCylppuStuptuOdaoLoN2Am
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V
HI
tupnIegatloVhgiH2V
DD
3.0+V
V
LI
egatloVwoLtupnI 3.0-8.0V
I
HI
tupnI
tnerruChgiH
,LES_KLC
,]1:0[_LESADO
]1:0[_LESBDO
V
DD
V=
NI
V564.3=051Aµ
]2:0[LESDPV
DD
V=
NI
V564.3=5Aµ
I
LI
tupnI
tnerruCwoL
,LES_KLC
,]1:0[_LESADO
]1:0[_LESBDO
V
DD
V,V564.3=
NI
V0=5-Aµ
]2:0[LESDPV
DD
V,V564.3=
NI
V0=051-Aµ
V
HO
1ETON;egatloVhgiHtuptuO 6.2V
V
LO
1ETON;egatloVwoLtuptuO 5.0V
