OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

2N7002T-7-F

P1-P3P4-P5
2N7002T
Document number: DS30301 Rev. 14 - 2
1 of 5
www.diodes.com
April 2012
© Diodes Incorporated
2N7002T
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
R
DS(ON)
I
D
T
A
= 25°C
60V
7.5Ω @ V
GS
= 5V
115mA
Description and Applications
This new generation MOSFET has been designed to minimize the on-
state resistance (R
DS(on)
) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
• DC-DC Converters
• Power management functions
• Battery Operated Systems and Solid-State Relays
• Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories, Transistors, etc
Features
• Low On-Resistance
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Ultra-Small Surface Mount Package
• Totally Lead Free, Full RoHS Compliant (Note 1)
• Halogen and Antimony Free. "Green" Device (Notes 2 and 3)
• Qualified to AEC-Q101 Standards for High Reliability
M
echanical Data
• Case: SOT523
• Case Material: Molded Plastic. “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Matte Tin Finish annealed over Alloy 42 leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
• Terminal Connections: See Diagram
• Weight: 0.002 grams (approximate)
Ordering Information (Note 4)
Part Number Qualification Case Packaging
2N7002T-7-F Commercial SOT523 3,000/Tape & Reel
2N7002T-13-F Commercial SOT523 10,000/Tape & Reel
2N7002TQ-7-F Automotive SOT523 3,000/Tape & Reel
2N7002TQ-13-F Automotive SOT523 10,000/Tape & Reel
Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. No purposely added lead. Halogen and Antimony free
2. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
3. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb
2
O
3
Fire Retardants
4. For packaging details, go to our website at http://www.diodes.com.
Marking Information
Date Code Key
Year 2005 2006 2007 2008 2009 2010 2011 2012
Code S T U V W X Y Z
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
SOT523
Top View
E
q
uivalent Circuit
Top View
Source
Gate
Drain
D
GS
72 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: T = 2006)
M = Month (ex: 9 = September)
72
YM
2N7002T
Document number: DS30301 Rev. 14 - 2
2 of 5
www.diodes.com
April 2012
© Diodes Incorporated
2N7002T
Maximum Ratings @T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Units
Drain-Source Voltage
V
DSS
60 V
Drain-Gate Voltage R
GS
≤ 1.0MΩ V
DGR
60 V
Gate-Source Voltage Continuous
Pulsed
V
GSS
±20
±40
V
Drain Current (Note 5) Continuous
Continuous @ 100°C
Pulsed
I
D
115
73
800
mA
Thermal Characteristics @T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Units
Total Power Dissipation (Note 5)
P
d
150 mW
Thermal Resistance, Junction to Ambient
R
θ
JA
833 °C/W
Operating and Storage Temperature Range
T
j,
T
STG
-55 to +150 °C
Electrical Characteristics @T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
BV
DSS
60
⎯ ⎯
V
V
GS
= 0V, I
D
= 10μA
Zero Gate Voltage Drain Current @ T
C
= 25°C
@ T
C
= 125°C
I
DSS
⎯ ⎯
1.0
500
µA
V
DS
= 60V, V
GS
= 0V
Gate-Body Leakage
I
GSS
⎯ ⎯
±10 nA
V
GS
= ±20V, V
DS
= 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
V
GS
(
th
)
1.0
⎯
2.0 V
V
DS
= V
GS
, I
D
= 250μA
Static Drain-Source On-Resistance @ T
j
= 25°C
@ T
j
= 125°C
R
DS (ON)
⎯
2.0
4.4
7.5
13.5
Ω
V
GS
= 5.0V,
I
D
= 0.05A
V
GS
= 10V, I
D
= 0.5A
On-State Drain Current
I
D
(
ON
)
0.5 1.0
⎯
A
V
GS
= 10V, V
DS
= 7.5V
Forward Transconductance
g
FS
80
⎯ ⎯
mS
V
DS
=10V, I
D
= 0.2A
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
C
iss
⎯
22 50 pF
V
DS
= 25V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance
C
oss
⎯
11 25 pF
Reverse Transfer Capacitance
C
rss
⎯
2.0 5.0 pF
SWITCHING CHARACTERISTICS (Note 7)
Turn-On Delay Time
t
D
(
ON
)
⎯
7.0 20 ns
V
DD
= 30V, I
D
= 0.2A,
R
L
= 150Ω, V
GEN
= 10V, R
GEN
= 25Ω
Turn-Off Delay Time
t
D
(
OFF
)
⎯
11 20 ns
Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6 .Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to production testing.
2N7002T
Document number: DS30301 Rev. 14 - 2
3 of 5
www.diodes.com
April 2012
© Diodes Incorporated
2N7002T
012
3
4
5
V , DRAIN-SOURCE VOLTAGE (V)
Fig. 1 On-Region Characteristics
DS
0.2
0.1
0.4
0.3
0.5
0.6
0.7
0.8
0.9
I, D
R
AI
N
-S
O
U
R
C
E
C
U
R
R
E
N
T
(A)
D
1.0
0
V = 2.5V
GS
V = 3.0V
GS
V = 4.0V
GS
V = 5.0V
GS
V = 6.0V
GS
V = 7.0V
GS
V = 10V
GS
1
2
3
4
5
00.2
I , DRAIN-SOURCE CURRENT (A)
Fig. 2 On-Resistance Variation with Gate Voltage
and Drain-Source Current
D
0.4
0.6
0.8
1.0
R
, D
R
AI
N
-S
O
U
R
C
E
O
N
-
R
ESIS
T
A
N
C
E
DS(ON)
()
Ω
V = 3.0V
GS
V = 4.0V
GS
V = .0V
GS
6
V = .0V
GS
7
V = V
GS
10
V = 5.0V
GS
0.5
1.5
2.5
0
1.0
2.0
-50 -25
0
25
50 75
100
125
150
T , JUNCTION TEMPERATURE ( C)
Fig. 3 Gate Threshold Variation with Temperature
J
°
V,
G
A
T
E
T
H
R
ES
H
O
LD V
O
L
T
A
G
E (V)
GS(th)
I = 250µA
D
0.5
1.5
2.5
R
D
R
AI
N
-S
O
U
R
C
E
ON-RESISTANCE (NORMALIZED)
DS(ON)
,
0
1.0
2.0
3.0
-50
-25 0
25 50
75
100 125 150
T , JUNCTION TEMPERATURE ( C)
Fig. 4 On-Resistance Variation with Temperature
J
°
V = 10V
I = 500mA
GS
D
0 5 10 15 20 25 30
V , DRAIN-SOURCE VOLTAGE (V)
Fig. 5 Typical Capacitance
DS
0
10
20
30
50
40
60
C
,
C
A
P
A
C
I
T
A
N
C
E (p
F
)
C
iss
C
oss
C
rss
f = 1MHz
0
2
468
10
V , GATE-SOURCE VOLTAGE (V)
Fig. 6 On-Resistance vs. Gate-Source Voltage
GS
0
0.5
2.0
3.0
2.5
4.5
4.0
3.5
5.0
R
D
R
AIN-S
O
U
R
C
E
O
N-
R
ESIS
T
AN
C
E
DS(ON),
()
Ω
1.5
1.0
I = 50mA
D
P1-P3P4-P5

2N7002T-7-F

Mfr. #:
Buy 2N7002T-7-F
Manufacturer:
Diodes Incorporated
Description:
MOSFET 60V 150mW
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet