OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

TSF30H200C C0G

P1-P3P4-P5
creat by A
R
- Patented Trench Schottky technology
- Excellent high temperature stability
- Low forward voltage
- Low power loss/ High efficiency
- High forward surge capability
Packing code with suffix "G" means green compound (halogen-free)
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
SYMBOL UNIT
V
RRM
V
dV/dt V/μs
V
AC
V
Typ Max Typ Max Typ Max Typ Max
T
J
= 25°C
0.76 0.82 0.80 0.88 0.81 0.90 0.84 0.92
T
J
= 125°C
0.64 0.69 0.65 0.73 0.68 0.77 0.70 0.79
T
J
= 25°C
0.86 0.92 0.90 0.96 0.89 0.98 0.91 1.00
T
J
= 125°C
0.75 0.80 0.78 0.86 0.77 0.86 0.80 0.89
T
J
= 25°C
μA
T
J
= 125°C
mA
R
θJC
°C/W
T
J
°C
T
STG
°C
Document Number: DS_D1411039 Version: G14
V
Instantaneous forward voltage
per diode ( Note1 )
I
F
= 30A
V
F
10000
4.5
120
Molding compound meets UL 94 V-0 flammability rating
TYPICAL APPLICATIONS
Trench Schottky barrier rectifier are designed for high frequency
miniature switched mode power supplies such as adapters, lighting
and on-board DC/DC converters.
FEATURES
- Compliant to RoHS directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
per device
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T
A
=25°C unless otherwise noted)
Maximum repetitive peak reverse voltage
TSF30H
100C
TSF30H
120C
TSF30H
200C
Polarity: As marked
per diode
I
F(AV)
Voltage rate of change (Rated V
R
)
Typical thermal resistance
Instantaneous reverse current per diode at rated
reverse voltage
1500
- 55 to +150
- 55 to +150
I
F
= 15A
Note 1: Pulse test with pulse width=300μs, 1% duty cycle
Operating junction temperature range
Storage temperature range
30
15
I
R
150
20
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load per diode
Isolation voltage from terminal to heatsink t = 1 min
150 A
TSF30H
150C
100
Mounting torque: 0.56 Nm max.
Weight: 1.7 g (approximately)
A
PARAMETER
200150
I
FSM
ITO-220AB
TSF30H100C thru TSF30H200C
Taiwan Semiconductor
Trench Schottky Rectifier
- Halogen-free according to IEC 61249-2-21 definition
Maximum average forward rectified
current
MECHANICAL DATA
Case: ITO-220AB
Document Number: DS_D1411039 Version: G14
G
PACKING
EXAMPLE
PREFERRED
PART NO.
PART NO.
Note 1: "xxx" defines voltage from 100V (TSF30H100C) to 200V (TSF30H200C)
PACKING CODE
TSF30H100C thru TSF30H200C
Taiwan Semiconductor
(T
A
=25°C unless otherwise noted)
ORDERING INFORMATION
PART NO.
PACKING CODE
SUFFIX
TSF30HXXXC
(Note 1)
PACKAGE
TSF30H120C C0G TSF30H120C
RATINGS AND CHARACTERISTICS CURVES
Green compound
G ITO-220AB 50 / Tube
PACKING CODE
SUFFIX
DESCRIPTION
C0
PACKING CODE
C0
0.01
0.1
1
10
100
0 0.2 0.4 0.6 0.8 1 1.2 1.4
T
j
=25°C
T
j
=125°C
T
j
=150°C
0
5
10
15
20
25
30
35
40
0 25 50 75 100 125 150
WITH HEATSINK
3in x 5in x 0.25in
Al-Plate
AVERAGE FORWARD CURRENT (A)
CASE TEMPERATURE (
o
C)
FORWARD VOLTAGE (V)
FIG. 2 TYPICAL FORWARD CHARACTERISTICS
TSF30H100C
INSTANTANEOUS FORWARD CURRENT (A)
0.01
0.1
1
10
100
0 0.2 0.4 0.6 0.8 1 1.2
T
j
=100°C
T
j
=25°C
T
j
=125°C
T
j
=150°C
INSTANTANEOUS FORWARD CURRENT (A)
FORWARD VOLTAGE (V)
TSF30H120C
FIG.1 FORWARD CURRENT DERATING CURVE
FIG. 3 TYPICAL REVERSE CHARACTERISTICS
0.01
0.1
1
10
100
0 0.2 0.4 0.6 0.8 1 1.2 1.4
T
j
=25°C
T
j
=125°C
T
j
=150°C
TSF30H150C
T
j
=100°C
FORWARD VOLTAGE (V)
FIG. 4 TYPICAL FORWARD CHARACTERISTICS
INSTANTANEOUS FORWARD CURRENT (A)
Document Number: DS_D1411039 Version: G14
TSF30H100C thru TSF30H200C
Taiwan Semiconductor
10
100
1000
10000
0.1 1 10 100
f=1.0MHz
V
sig
=50mV
p-p
TSF30H200C
TSF30H150C
TSF30H100C
TSF30H120C
CAPACITANCE (pF)
FIG. 10 TYPICAL JUNCTION CAPACITANCE
REVERSE VOLTAGE (V)
0.00001
0.0001
0.001
0.01
0.1
1
10
10 20 30 40 50 60 70 80 90 100
T
J
=25°C
T
J
=125°C
T
J
=100
°
C
T
J
=150°C
PERCENT OF RATED PEAK REVERSE VOLTAGE.(%)
TSF30H200C
INSTANTANEOUS REVERSE CURRENT(mA)
FIG. 9 TYPICAL REVERSE CHARACTERISTICS
0.00001
0.0001
0.001
0.01
0.1
1
10
10 20 30 40 50 60 70 80 90 100
PERCENT OF RATED PEAK REVERSE VOLTAGE.(%)
TSF30H150C
INSTANTANEOUS REVERSE CURRENT(mA)
FIG. 8 TYPICAL REVERSE CHARACTERISTICS
T
J
=25°C
T
J
=125°C
T
J
=100
°
C
T
J
=150°C
0.00001
0.0001
0.001
0.01
0.1
1
10
10 20 30 40 50 60 70 80 90 100
PERCENT OF RATED PEAK REVERSE VOLTAGE.(%)
TSF30H120C
INSTANTANEOUS REVERSE CURRENT(mA)
FIG. 7 TYPICAL REVERSE CHARACTERISTICS
T
J
=25°C
T
J
=125°C
T
J
=100
°
C
T
J
=150°C
0.0001
0.001
0.01
0.1
1
10
100
10 20 30 40 50 60 70 80 90 100
PERCENT OF RATED PEAK REVERSE VOLTAGE.(%)
TSF30H100C
INSTANTANEOUS REVERSE CURRENT (mA)
FIG. 6 TYPICAL REVERSE CHARACTERISTICS
T
J
=25°C
T
J
=125°C
T
J
=150°C
0.01
0.1
1
10
100
0 0.2 0.4 0.6 0.8 1 1.2 1.4
TSF30H200C
FIG. 5 TYPICAL FORWARD CHARACTERISTICS
INSTANTANEOUS FORWARD CURRENT (A)
FORWARD VOLTAGE (V)
T
J
=25°C
T
J
=125°C
T
J
=100
°
C
T
J
=150°C
P1-P3P4-P5

TSF30H200C C0G

Mfr. #:
Buy TSF30H200C C0G
Manufacturer:
Taiwan Semiconductor
Description:
Schottky Diodes & Rectifiers 30A 200V Trench Schottky
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet